摘要:
A method of preventing scale from being deposited in case of producing fresh water from sea water by heating the sea water in a vapour pressure type evaporator and multiple stage flush evaporator and by condensing water vapour evolved to obtain the fresh water comprising adding to the sea water small amount of seed crystal selected from the group consisting of calcium carbonate and magnesium hydroxide together with a surface active agent selected from the group consisting of a nonionic active agent and cation surface active agent.
摘要:
A package for packing a plurality of compressors including a plurality of partition walls for securely laying and stacking compressors is disclosed. The compressors and partition walls are stacked in alternating layers on a pallet. A stretch film is wrapped around the partition wall and compressor layers and the pallet. The partition walls are made of foamed plastic material. The upper and lower end surfaces of the partition walls are formed to fit the outer shape of the compressors. The partition walls can be made more easily and can be precisely dimensioned.
摘要:
This invention relates to a thin film semiconductor device and a method for fabricating it, and more particularly a thin film semiconductor device suitably applicable to a display device in an active matrix system and a method for fabricating it. In this invention, the structure of a thin film semiconductor device for improving the characteristic thereof and particularly the structure relative to the dominant orientation of a poly-Si film as an active layer of a thin film transistor (TFT) is disclosed. A method for fabricating a thin film semiconductor device which is capable of forming a poly-Si film at a relatively low process temperature is disclosed. Further, a display device in an active matrix system which provided high performance and high image quality is disclosed. The poly-Si film having a dominant orientation of (111) is formed by forming a poly-Si film on the semiconductor substrate at a temperature up to 570.degree. C. and annealing the substrate at a temperature up to 640.degree. C.