Partition wall for packing compressors
    2.
    发明授权
    Partition wall for packing compressors 失效
    包装压缩机分隔墙

    公开(公告)号:US4892196A

    公开(公告)日:1990-01-09

    申请号:US186960

    申请日:1988-04-27

    申请人: Yoshiaki Okajima

    发明人: Yoshiaki Okajima

    摘要: A package for packing a plurality of compressors including a plurality of partition walls for securely laying and stacking compressors is disclosed. The compressors and partition walls are stacked in alternating layers on a pallet. A stretch film is wrapped around the partition wall and compressor layers and the pallet. The partition walls are made of foamed plastic material. The upper and lower end surfaces of the partition walls are formed to fit the outer shape of the compressors. The partition walls can be made more easily and can be precisely dimensioned.

    摘要翻译: 公开了一种用于包装多个压缩机的包装,其包括用于可靠地铺设和堆叠压缩机的多个分隔壁。 压缩机和分隔壁以交替的层叠在托盘上。 拉伸膜缠绕在分隔壁和压缩机层和托盘上。 分隔壁由发泡塑料制成。 分隔壁的上下端面形成为适应压缩机的外形。 分隔壁可以更容易地制造并且可以精确地定尺寸。

    Thin film semiconductor device and method for fabricating the same
    3.
    发明授权
    Thin film semiconductor device and method for fabricating the same 失效
    薄膜半导体器件及其制造方法

    公开(公告)号:US5153702A

    公开(公告)日:1992-10-06

    申请号:US203935

    申请日:1988-06-08

    摘要: This invention relates to a thin film semiconductor device and a method for fabricating it, and more particularly a thin film semiconductor device suitably applicable to a display device in an active matrix system and a method for fabricating it. In this invention, the structure of a thin film semiconductor device for improving the characteristic thereof and particularly the structure relative to the dominant orientation of a poly-Si film as an active layer of a thin film transistor (TFT) is disclosed. A method for fabricating a thin film semiconductor device which is capable of forming a poly-Si film at a relatively low process temperature is disclosed. Further, a display device in an active matrix system which provided high performance and high image quality is disclosed. The poly-Si film having a dominant orientation of (111) is formed by forming a poly-Si film on the semiconductor substrate at a temperature up to 570.degree. C. and annealing the substrate at a temperature up to 640.degree. C.

    摘要翻译: 本发明涉及一种薄膜半导体器件及其制造方法,更具体地说,涉及适用于有源矩阵系统中的显示装置的薄膜半导体器件及其制造方法。 在本发明中,公开了用于改善其特性的薄膜半导体器件的结构,特别是关于作为薄膜晶体管(TFT)的有源层的多晶硅膜的主导方向的结构。 公开了一种能够在较低处理温度下形成多晶硅薄膜的薄膜半导体器件的制造方法。 此外,公开了提供高性能和高图像质量的有源矩阵系统中的显示装置。 通过在半导体衬底上在高达570℃的温度下形成多晶硅膜,并在高达640℃的温度下对衬底进行退火,形成具有(111)主导取向性的多晶硅膜。