公开(公告)号：US20080303103A1

公开(公告)日：2008-12-11

申请号：US11932620

申请日：2007-10-31

申请人： Kuo Chung CHEN ,  Jen-Jui HUANG ,  Hong Wen LEE

发明人： Kuo Chung CHEN ,  Jen-Jui HUANG ,  Hong Wen LEE

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7834 ,  H01L21/26586 ,  H01L21/28061 ,  H01L29/1037 ,  H01L29/4916 ,  H01L29/4933 ,  H01L29/66583 ,  H01L29/6659 ,  H01L29/66613

摘要： The present invention provides a semiconductor structure and a method of forming the same. The method includes the steps of providing a substrate, forming a mask layer with an opening on the substrate, locally oxidizing the substrate to form an oxide layer within the opening, removing the oxide layer, such that a partial surface of the substrate becomes a curve surface, forming a sacrificial layer on the curve surface, forming a first doped region in the substrate and under the hard mask layer, forming a gate stack within the opening, removing the hard mask layer, forming a spacer on a sidewall of the gate stack, and forming a second doped region in the substrate and under the spacer. The second doped region has a dopant concentration is larger than that of the first doped region. Therefore, the oxide layer increases the surface area of the substrate so as to increase the channel length. Thus, the leakage between the source region and the drain region can be improved.

摘要翻译： 本发明提供一种半导体结构及其形成方法。 该方法包括以下步骤：提供衬底，在衬底上形成具有开口的掩模层，局部氧化衬底以在开口内形成氧化物层，去除氧化物层，使得衬底的部分表面变为曲线 在所述曲面上形成牺牲层，在所述衬底中并在所述硬掩模层之下形成第一掺杂区域，在所述开口内形成栅叠层，去除所述硬掩膜层，在所述栅叠层的侧壁上形成间隔物 并且在所述衬底中并在所述间隔物之下形成第二掺杂区域。 第二掺杂区域的掺杂浓度大于第一掺杂区域的掺杂浓度。 因此，氧化物层增加了衬底的表面积，从而增加了沟道长度。 因此，可以提高源极区域和漏极区域之间的泄漏。