摘要:
A frame panel for a three-dimensional sign board, a three-dimensional sign board including the panel, and a manufacturing method therefor. The frame panel includes a band-shaped frame panel which is cut into a predetermined length and wound in the form of a coil so that the frame panel can be bent and shaped into a desired pattern such as a character; and hitch units on which an upper panel is fixated, which are formed along the longitudinal direction of the frame panel and which are spaced apart from each other on two ends of one side of the frame panel. The hitch units are made of a soft synthetic resin material, which is the same material as used for the upper panel.
摘要:
A three-dimensional signage display, including: a frame panel having a predetermined width, the frame panel configured to be bent and shaped into a side frame with a desired pattern; an upper panel configured to cover a first opening of the side frame; at least one tab formed along a longitudinal direction of the frame panel, wherein the at least one tab is formed with polymer material.
摘要:
The present invention relates to a magnetic strainer that is configured to have a cap disposed in a filter insertion hole formed on the center of a branch pipe having an inlet and an outlet coupled to a pipe and to have upper and lower magnets arranged with repulsive forces, while placing a repulsive space therebetween, in such a manner as to be accommodated in both ends of a magnet case in a longitudinal direction of the magnet case to allow conductors in impurities to be easily collected to the inside of a filtering screen disposed between the filter insertion hole and the cap to filter the impurities, so that if ascending and descending means disposed under the magnet case operates, the upper magnet is descended to the repulsive space to easily remove the conductors collected on the top end surface of the magnet case.
摘要:
Disclosed herein is a method of fabricating a high temperature superconducting film in a vacuum chamber through auxiliary cluster beam spraying using an evaporation method, wherein a high temperature superconducting material is deposited on a substrate in a vapor state by evaporating the high temperature superconducting material, and at the same time, a cluster beam material is formed into gas atoms by heating the cluster beam material charged in a housing, and the formed gas atoms pass through a nozzle of an inlet of the housing and then are sprayed and grown on the substrate in the form of the cluster beam, thereby forming pinning centers in the high temperature superconducting film.
摘要:
A process for preparing N, N-disubstituted urea and more particularly, to an improved process for preparing N,N'-disubstituted urea derivatives of the following formula (I) comprising ##STR1## wherein each of Ar.sup.1 and Ar.sup.2 represents unsubstituted aromatic radical or aromatic radical substituted with halogen, atom, alkyl group, or alkoxy group, and Ar.sup.1 and Ar.sup.2 are the same or different, reacting aromatic mono-nitro compound, aromatic primary amines, and carbon monoxide in the presence of the catalyst composition consisting of a palladium compound as a main catalyst and an ammonium or a phosphonium salt containing halogen atom aS a co-catalyst, and a non-polar solvent.
摘要:
The present invention relates to a device for manufacturing magnetized water including: an outer case; an adapter coupled to one end or both ends of the outer case; a magnet case having a body, accommodation portions facing each other, and end caps disposed on both longitudinal ends of the body; magnet parts each having a plurality of permanent magnets serially continuously arranged and accommodated in each accommodation portion; spacers insertedly disposed between the permanent magnets; and shield steel plates coupled to the magnet case, wherein attractive force generation arrangements and repulsive force generation arrangements of the permanent magnets are arbitrarily changed by means of the magnet case and the end caps separably coupled to each other.
摘要:
The present invention relates to a stage, particularly to, a stage which is able to move minutely, having a rigidity-improved transfer part. A stage includes a work table on which a working object is placed, a motor configured to provide a rotational force, a shaft rotated by the motor to transfer the work table, a linear moving part configured to be expandable to linearly move the shaft in an axial direction, the linear moving part having a hollow to insert an end of the shaft therein, and an expanding part configured to be expandable as far as the shaft is moved by the linear moving part.
摘要:
A channel letter bending machine for bending a return of a channel letter from a stock includes a feeding unit disposed along a path of travel of the stock to be bent for feeding the stock, a flanging unit for forming a flange along one edge of the stock, a notching unit for notching the flange of the stock fed by the feeding mechanism along the path of travel, and a bending unit for bending the stock under the control of the computer control system into the desired configuration for the channel letter shape, wherein the notching unit and the flanging unit are disposed upstream of the bending unit and the flanging unit is disposed upstream of the notching unit.
摘要:
A method of forming a gate electrode in a semiconductor device which can easily perform etching process for forming the gate electrode and reduce the resistivity of a gate electrode, is disclosed. In the present invention, a gate oxide layer, an amorphous silicon layer and a tungsten silicide layer are sequentially formed on a semiconductor substrate. A mask oxide pattern is then formed on the tungsten silicide layer in the shape of a gate electrode. Next, the tungsten silicide layer and the amorphous silicon layer are etched using the mask oxide pattern as an etch mask, to form a gate electrode. Thereafter, the amorphous silicon layer and the tungsten silicide layer of the gate electrode are thermal-treated by RTP spike annealing and an oxide layer is then formed on the side wall of the gate electrode. According to the present invention, by reducing resistivity of a tungsten silicide layer, it is possible to apply a conventional gate electrode material to high integration device over 1GDRAM, thereby lowering cost to develop a new gate electrode material. Furthermore, etching process for forming a gate electrode is easily performed when using the tungsten silicide layer as the gate electrode material, thereby obtaining uniform gate electrode. As a result, the reliability of a device is improved.
摘要:
The present invention relates to a magnetic strainer that is configured to have a cap disposed in a filter insertion hole formed on the center of a branch pipe having an inlet and an outlet coupled to a pipe and to have upper and lower magnets arranged with repulsive forces, while placing a repulsive space therebetween, in such a manner as to be accommodated in both ends of a magnet case in a longitudinal direction of the magnet case to allow conductors in impurities to be easily collected to the inside of a filtering screen disposed between the filter insertion hole and the cap to filter the impurities, so that if ascending and descending means disposed under the magnet case operates, the upper magnet is descended to the repulsive space to easily remove the conductors collected on the top end surface of the magnet case.