Thin film transistor array panel and manufacturing method of the same
    1.
    发明授权
    Thin film transistor array panel and manufacturing method of the same 有权
    薄膜晶体管阵列及其制造方法相同

    公开(公告)号:US09046727B2

    公开(公告)日:2015-06-02

    申请号:US12414932

    申请日:2009-03-31

    摘要: A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

    摘要翻译: 薄膜晶体管(“TFT”)阵列面板包括: 绝缘基板,设置在所述绝缘基板上并包括漏电极的TFT,覆盖所述TFT的钝化层,并且包括设置在其中的所述漏电极对应的接触部分,所述隔板包括设置在所述钝化层上的有机材料,并且包括 横向部分,纵向部分和设置在漏电极上的接触部分,设置在钝化层上并设置在由隔板限定的区域中的滤色器,设置在隔板上的有机覆盖层和滤色器,以及 设置在所述有机覆盖层上的像素电极,并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极,其中在所述有机覆盖层中形成接触孔,所述接触孔对应于所述钝化层的接触部分 钝化层。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME
    2.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20100051951A1

    公开(公告)日:2010-03-04

    申请号:US12414932

    申请日:2009-03-31

    IPC分类号: H01L33/00 H01L21/28

    摘要: A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

    摘要翻译: 薄膜晶体管(“TFT”)阵列面板包括: 绝缘基板,设置在所述绝缘基板上并包括漏电极的TFT,覆盖所述TFT的钝化层,并且包括设置在其中的所述漏电极对应的接触部分,所述隔板包括设置在所述钝化层上的有机材料,并且包括 横向部分,纵向部分和设置在漏电极上的接触部分,设置在钝化层上并设置在由隔板限定的区域中的滤色器,设置在隔板上的有机覆盖层和滤色器,以及 设置在所述有机覆盖层上的像素电极,并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极,其中在所述有机覆盖层中形成接触孔,所述接触孔对应于所述钝化层的接触部分 钝化层。

    Thin film transistor substrate and method for manufacturing the same
    9.
    发明授权
    Thin film transistor substrate and method for manufacturing the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US08598581B2

    公开(公告)日:2013-12-03

    申请号:US12434907

    申请日:2009-05-04

    IPC分类号: H01L33/00

    摘要: A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member.

    摘要翻译: 薄膜晶体管阵列板的制造方法包括: 在基板上形成包括栅电极和高度增加部件的栅极线,在栅极线和高度增加部件上形成栅绝缘层,形成半导体,包括源电极和漏电极的数据线, 并且在所述栅极绝缘层上与所述高度增加部件的至少一部分重叠,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成第一绝缘层,在所述栅极绝缘层上形成阻挡部件,在所述第一 对应于栅极线和数据线的绝缘层,在由阻光构件限定的区域中形成滤色器,在遮光构件和滤色器上形成第二绝缘层,并对第二绝缘层进行构图, 遮光构件或滤色器,以及第一绝缘层,以形成暴露与高度增加构件对准的漏电极的一部分的接触孔。

    Liquid crystal display
    10.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US08144280B2

    公开(公告)日:2012-03-27

    申请号:US12152619

    申请日:2008-05-14

    IPC分类号: G02F1/136 G02F1/1343

    摘要: A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.

    摘要翻译: 提供了一种液晶显示器,用于防止光泄漏,同时提高了开口率和减少了数据线的负载。 液晶显示器包括形成在绝缘基板上并且彼此分开的栅极线和存储电极线,与栅极线相交的第一数据线和第二数据线,由栅极线和第一栅极线限定的第一像素电极 数据线和由栅极线和第二数据线限定并与第一像素电极相邻的第二像素电极。 此外,包括第一像素电极和第二像素电极之间的阻挡电极,其中第一数据线的至少一部分设置在第一像素电极下方,并且阻挡电极的至少一部分设置在第二像素电极下方 并且除了第一条数据线之外。