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    Magneto-resistive random access memory
    2.
    发明授权
    Magneto-resistive random access memory 有权
    磁阻随机存取存储器

    公开(公告)号：US06815784B2

    公开(公告)日：2004-11-09

    申请号：US10445828

    申请日：2003-05-28

    申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L2982

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

    Method for manufacturing magneto-resistive random access memory
    3.
    发明授权
    Method for manufacturing magneto-resistive random access memory 有权
    制造磁阻随机存取存储器的方法

    公开(公告)号：US07220599B2

    公开(公告)日：2007-05-22

    申请号：US10950584

    申请日：2004-09-28

    申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L21/00 ,  H01L29/76

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

    摘要翻译： 磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层 在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极 栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。 阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。

    Perpendicular magnetic recording medium
    5.
    发明申请
    Perpendicular magnetic recording medium 审中-公开
    垂直磁记录介质

    公开(公告)号：US20070196697A1

    公开(公告)日：2007-08-23

    申请号：US11581326

    申请日：2006-10-17

    申请人： Taek-dong Lee ,  Young-wook Tahk ,  Sung-chul Lee

    发明人： Taek-dong Lee ,  Young-wook Tahk ,  Sung-chul Lee

    IPC分类号： G11B5/66

    CPC分类号： G11B5/667 ,  G11B5/7325

    摘要： A perpendicular magnetic recording medium is provided, the perpendicular magnetic recording medium including: a substrate; a first soft magnetic underlayer formed on the substrate; a perpendicular anisotropic middle layer that is formed on the first soft magnetic underlayer and has perpendicular magnetic anisotropy; a second soft magnetic underlayer formed on the perpendicular anisotropic middle layer; and a perpendicular magnetic recording layer formed on the second soft magnetic underlayer.

    摘要翻译： 提供垂直磁记录介质，垂直磁记录介质包括：基板; 形成在所述基板上的第一软磁性底层; 垂直各向异性中间层，形成在第一软磁性底层上，具有垂直的磁各向异性; 形成在垂直各向异性中间层上的第二软磁性底层; 以及形成在第二软磁性底层上的垂直磁记录层。

    Magneto-resistive random access memory and method for manufacturing the same
    6.
    发明申请
    Magneto-resistive random access memory and method for manufacturing the same 有权
    磁阻随机存取存储器及其制造方法

    公开(公告)号：US20050036399A1

    公开(公告)日：2005-02-17

    申请号：US10950584

    申请日：2004-09-28

    申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L27/105 ,  G11C11/15 ,  G11C11/34 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

    摘要翻译： 磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层 在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极 栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。 阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。