公开(公告)号：US20090078989A1

公开(公告)日：2009-03-26

申请号：US12213329

申请日：2008-06-18

申请人： Kwang-soo Seol ,  Nong-moon Hwang ,  Chan-soo Kim ,  Dong-kwon Lee ,  Woong-kyu Youn ,  Sang-moo Choi

发明人： Kwang-soo Seol ,  Nong-moon Hwang ,  Chan-soo Kim ,  Dong-kwon Lee ,  Woong-kyu Youn ,  Sang-moo Choi

IPC分类号： H01L21/28 ,  H01L21/318 ,  H01L29/792

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3185 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L29/792

摘要： Provided are a method of forming silicon nitride at a low temperature, a charge trap memory device including crystalline nano dots formed by using the same, and a method of manufacturing the charge trap memory device. The method of forming silicon nitride includes loading a substrate into a chamber of a silicon nitride deposition device comprising a filament; increasing a temperature of the filament to a temperature whereby a reactant gas to be injected into the chamber may be dissociated; and injecting the reactant gas into the chamber so as to form a crystalline silicon nitride film or crystalline silicon nitride nano dots on the substrate. In the method, the temperature of the filament may be maintained at 1,400° C.˜2,000° C., and a pressure in the chamber may be maintained at several to several ten torr when the reactant gas in injected into the chamber.

摘要翻译： 提供了一种在低温下形成氮化硅的方法，包括通过使用它们形成的结晶纳米点的电荷陷阱存储器件，以及制造电荷陷阱存储器件的方法。 形成氮化硅的方法包括将衬底装载到包括灯丝的氮化硅沉积装置的室中; 将长丝的温度升高到可以解离待注入室内的反应气体的温度; 并将反应气体注入到室中，以在衬底上形成结晶氮化硅膜或结晶氮化硅纳米点。 在该方法中，灯丝的温度可以保持在1400℃〜2000℃，并且当注入到室中的反应气体时，室中的压力可以保持在几至几十托。