公开(公告)号：US20100183818A1

公开(公告)日：2010-07-22

申请号：US12440304

申请日：2007-09-06

申请人： Nong-Moon Hwang ,  Chan-Soo Kim ,  Jae-Ik Lee ,  Yung-Bin Chung ,  Woong-Kyu Youn

发明人： Nong-Moon Hwang ,  Chan-Soo Kim ,  Jae-Ik Lee ,  Yung-Bin Chung ,  Woong-Kyu Youn

IPC分类号： C23C4/10

CPC分类号： C23C16/4401 ,  C23C16/44 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0259 ,  H01L21/0262

摘要： Provided are an apparatus and a method of depositing films capable of controlling deposition rate and film properties using the charging behavior of nanoparticles formed in gas phase. The apparatus includes a chamber in which a substrate is loaded, a gas supply system configured to introduce a reaction gas into the chamber, a filament configured to emit heat for dissociating the introduced reaction gas, a power supply configured to apply a constant alternate current or direct current voltage, and a bias supply unit configured to apply a bias to at least one of a top, a side and a bottom of the substrate using a voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas, the bias supply unit being separated from the substrate.

摘要翻译： 提供了一种使用在气相中形成的纳米颗粒的充电行为来沉积能够控制沉积速率和膜性质的膜的装置和方法。 该装置包括：其中装载有基板的腔室，构造成将反应气体引入腔室中的气体供给系统，被配置为发射热量以解散引入的反应气体的细丝;配置为施加恒定交流电流的电源; 以及偏置电源单元，其被配置为使用从电源施加的电压向衬底的顶部，侧面和底部中的至少一个施加偏压，同时膜从解离反应沉积在衬底上 气体，偏压供应单元与基板分离。

公开(公告)号：US20090078989A1

公开(公告)日：2009-03-26

申请号：US12213329

申请日：2008-06-18

申请人： Kwang-soo Seol ,  Nong-moon Hwang ,  Chan-soo Kim ,  Dong-kwon Lee ,  Woong-kyu Youn ,  Sang-moo Choi

发明人： Kwang-soo Seol ,  Nong-moon Hwang ,  Chan-soo Kim ,  Dong-kwon Lee ,  Woong-kyu Youn ,  Sang-moo Choi

IPC分类号： H01L21/28 ,  H01L21/318 ,  H01L29/792

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3185 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L29/792

摘要： Provided are a method of forming silicon nitride at a low temperature, a charge trap memory device including crystalline nano dots formed by using the same, and a method of manufacturing the charge trap memory device. The method of forming silicon nitride includes loading a substrate into a chamber of a silicon nitride deposition device comprising a filament; increasing a temperature of the filament to a temperature whereby a reactant gas to be injected into the chamber may be dissociated; and injecting the reactant gas into the chamber so as to form a crystalline silicon nitride film or crystalline silicon nitride nano dots on the substrate. In the method, the temperature of the filament may be maintained at 1,400° C.˜2,000° C., and a pressure in the chamber may be maintained at several to several ten torr when the reactant gas in injected into the chamber.

摘要翻译： 提供了一种在低温下形成氮化硅的方法，包括通过使用它们形成的结晶纳米点的电荷陷阱存储器件，以及制造电荷陷阱存储器件的方法。 形成氮化硅的方法包括将衬底装载到包括灯丝的氮化硅沉积装置的室中; 将长丝的温度升高到可以解离待注入室内的反应气体的温度; 并将反应气体注入到室中，以在衬底上形成结晶氮化硅膜或结晶氮化硅纳米点。 在该方法中，灯丝的温度可以保持在1400℃〜2000℃，并且当注入到室中的反应气体时，室中的压力可以保持在几至几十托。