公开(公告)号：US07995396B2

公开(公告)日：2011-08-09

申请号：US12458294

申请日：2009-07-08

申请人： Kwang-soo Seol ,  Sung-II Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

发明人： Kwang-soo Seol ,  Sung-II Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

IPC分类号： G11C11/34

CPC分类号： G11C16/3454 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C2211/5621

摘要： Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.

摘要翻译： 提供了操作NAND非易失性存储器件的方法。 操作方法包括从单元串的多个存储单元中向所选存储单元施加读取电压或验证电压以验证或读取所选存储单元的编程状态; 对最靠近所述单元串的选定存储单元的未选择存储单元施加第一通过电压; 将第二通过电压施加到所选择的存储器单元的第二最近的未选择的存储器单元; 以及向其他未选择的存储单元施加第三通过电压，其中第一通过电压小于第二和第三通过电压中的每一个，并且第二通过电压大于第三通过电压。

公开(公告)号：US20080285353A1

公开(公告)日：2008-11-20

申请号：US12073681

申请日：2008-03-07

申请人： Sung-II Park ,  Sung-Hoon Lee ,  Kwang-Soo Seol ,  Young-Gu Jin ,  Jong-Seob Kim

发明人： Sung-II Park ,  Sung-Hoon Lee ,  Kwang-Soo Seol ,  Young-Gu Jin ,  Jong-Seob Kim

IPC分类号： G11C16/06 ,  H01L29/788 ,  H01L21/336

CPC分类号： H01L21/28282 ,  G11C16/349 ,  H01L27/11568 ,  H01L29/42332 ,  H01L29/42336 ,  H01L29/42348 ,  H01L29/42352 ,  H01L29/66833 ,  H01L29/792

摘要： Provided are a memory device, a method of manufacturing the same, and a method of operating the same. The memory device may include a channel region having an upper end where both sides of the upper end are curved, the curved portions of both sides allowing charges to be injected thereinto in a program or erase voltage such that the curved portions into which the charges are injected are separate from a portion which determines a threshold voltage, and a gate structure on the channel region.

摘要翻译： 提供了一种存储器件及其制造方法及其操作方法。 存储器件可以包括具有上端的上端弯曲的上端的通道区域，两侧的弯曲部分允许以编程或擦除电压将电荷注入其中，使得电荷的弯曲部分 注入与确定阈值电压的部分和沟道区上的栅极结构分开。

公开(公告)号：US06781653B2

公开(公告)日：2004-08-24

申请号：US09785424

申请日：2001-02-20

申请人： Sung-II Park ,  Jae-Young Chung

发明人： Sung-II Park ,  Jae-Young Chung

IPC分类号： G02F11335

CPC分类号： G02F1/133553 ,  G02F1/136227

摘要： A method of fabricating a liquid crystal display device includes forming an embossed reflective electrode. In the method, the embossed reflective electrode is embossed via a dry-etching method with a mixture of SF6+O2 or CF4+O2 gases, or with oxygen gas, such that a plurality of small concave and convex portions are formed on the reflective electrode. Since the concave and convex portions of the reflective electrode diffuse light, high luminance and wide viewing angle can be achieved.

摘要翻译： 制造液晶显示装置的方法包括形成压花反射电极。 在该方法中，压花反射电极通过干法蚀刻法与SF6 + O2或CF4 + O2气体或氧气的混合物压印，使得在反射电极上形成多个小的凹凸部分 。 由于反射电极的凹凸部漫射光，可以实现高亮度和宽视角。

公开(公告)号：US06654087B2

公开(公告)日：2003-11-25

申请号：US09781541

申请日：2001-02-12

申请人： In-Duk Song ,  Sung-II Park ,  Jae-Young Chung

发明人： In-Duk Song ,  Sung-II Park ,  Jae-Young Chung

IPC分类号： G02F11333

CPC分类号： G02F1/133555 ,  G02F2001/133638

摘要： The present invention provides a transflective LCD device that has a common contrast ratio in both the transmissive mode and the reflective mode. It also discloses a transflective LCD device that has an equal luminance in both the transmissive mode and the reflective mode. The transflective LCD device includes first and second substrates; a transparent conductive electrode on the first substrate; a lower passivation layer on the transparent conductive electrode; a reflective electrode formed on the lower passivation layer, the reflective electrode including a transmitting hole; a first QWP (quarter wave plate) under the first substrate; a lower polarizer formed under the first QWP; a second QWP on the second substrate; an upper polarizer formed on the second QWVP; an upper passivation layer under the second substrate; a transparent common electrode under the upper passivation layer; a liquid crystal layer interposed between the first and second substrates; and a backlight device arranged below the second substrate.

摘要翻译： 本发明提供一种在透射模式和反射模式中具有通用对比度的半透射型LCD装置。 还公开了一种在透射模式和反射模式中具有相同亮度的透反射LCD装置。 透反式LCD装置包括第一和第二基板; 在第一基板上的透明导电电极; 透明导电电极上的下钝化层; 形成在所述下钝化层上的反射电极，所述反射电极包括透光孔; 第一基板下的第一QWP（四分之一波片）; 在第一QWP下形成的下偏光片; 第二基板上的第二QWP; 形成在第二QWVP上的上偏振器; 在第二衬底下方的上钝化层; 上钝化层下的透明公共电极; 介于所述第一和第二基板之间的液晶层; 以及布置在第二基板下方的背光装置。