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    SOLAR CELL SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SOLAR CELL USING SAME
    1.
    发明申请
    SOLAR CELL SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SOLAR CELL USING SAME 审中-公开
    太阳能电池基板，其制造方法和使用该太阳能电池的太阳能电池

    公开(公告)号：US20140124028A1

    公开(公告)日：2014-05-08

    申请号：US14124867

    申请日：2012-06-08

    申请人： Kyoung-Bo Kim ,  Young-Jun Park ,  Je-Hoon Baek ,  Jong-Sang Kim ,  Young-Geun Kim

    发明人： Kyoung-Bo Kim ,  Young-Jun Park ,  Je-Hoon Baek ,  Jong-Sang Kim ,  Young-Geun Kim

    IPC分类号： H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/02167 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    摘要： One aspect of the present invention is a solar cell substrate, comprising: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other can be different metals. Additionally, a solar cell, which is another aspect of the present invention, comprises: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other comprise solar cell substrates which are of different metals; p-type light absorption layers formed on said solar cell substrates; n-type buffer layers formed on said light absorption layers; transparent windows formed on said buffer layers; and upper electrodes formed on said transparent windows.

    摘要翻译： 本发明的一个方面是太阳能电池基板，包括：下基板; 以及形成在所述下基板的上部的下电极，其中在所述下基板和所述下电极之间包括具有至少一个或两个或更多个金属层的金属防扩散膜，并且如果两个或更多个金属 形成层，彼此相邻的金属层可以是不同的金属。 此外，作为本发明的另一方面的太阳能电池包括：下基板; 以及形成在所述下基板的上部的下电极，其中在所述下基板和所述下电极之间包括具有至少一个或两个或更多个金属层的金属防扩散膜，并且如果两个或更多个金属 形成层，彼此相邻的金属层包括具有不同金属的太阳能电池基板; 形成在所述太阳能电池基板上的p型光吸收层; 形成在所述光吸收层上的n型缓冲层; 形成在所述缓冲层上的透明窗; 和形成在所述透明窗口上的上电极。

    SOLAR CELL SUBSTRATE AND SOLAR CELL USING SAME
    2.
    发明申请
    SOLAR CELL SUBSTRATE AND SOLAR CELL USING SAME 审中-公开
    太阳能电池基板和使用相同的太阳能电池

    公开(公告)号：US20140130859A1

    公开(公告)日：2014-05-15

    申请号：US14126115

    申请日：2012-06-08

    申请人： Kyoung-Bo Kim ,  Young-Jun Park ,  Je-Hoon Baek ,  Jong-Sang Kim

    发明人： Kyoung-Bo Kim ,  Young-Jun Park ,  Je-Hoon Baek ,  Jong-Sang Kim

    IPC分类号： H01L31/0224

    CPC分类号： H01L31/022425 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541

    摘要： The present invention relates to a solar cell substrate, and to a solar cell using same. The solar cell according to one embodiment of the present invention comprises: a lower substrate; and a lower electrode formed on the lower substrate. The lower electrode is formed of a Mo—X—Na three-component-system compound metal layer. Here, X may be one of Nb, Ni, Si, Ti, W, and Cr. The solar cell according to another embodiment of the present invention may comprise: a solar cell substrate including a lower substrate and a Mo—X—Na three-component-system compound metal layer that is a lower electrode formed on the lower substrate; a light-absorption layer formed on the solar cell substrate; a buffer layer formed on the light-absorption layer; a transparent window formed on the buffer layer; and an upper electrode formed on the transparent window.

    摘要翻译： 太阳能电池基板及其制造方法技术领域本发明涉及太阳能电池基板，太阳能电池。 根据本发明的一个实施例的太阳能电池包括：下基板; 和形成在下基板上的下电极。 下电极由Mo-X-Na三组分体系复合金属层形成。 这里，X可以是Nb，Ni，Si，Ti，W和Cr中的一种。 根据本发明的另一实施例的太阳能电池可以包括：太阳能电池基板，其包括下基板和Mo-X-Na三组分系统复合金属层，其是形成在下基板上的下电极; 形成在太阳能电池基板上的光吸收层; 形成在所述光吸收层上的缓冲层; 形成在缓冲层上的透明窗; 和形成在透明窗上的上电极。

    Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
    3.
    发明授权
    Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same 有权
    薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管显示装置

    公开(公告)号：US08673697B2

    公开(公告)日：2014-03-18

    申请号：US13100979

    申请日：2011-05-04

    申请人： Moon-Jin Kim ,  Kyoung-Bo Kim ,  Ki-Yong Lee ,  Han-Hee Yoon

    发明人： Moon-Jin Kim ,  Kyoung-Bo Kim ,  Ki-Yong Lee ,  Han-Hee Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01L29/4908 ,  H01L29/66757

    摘要： A method of fabricating a thin film transistor, comprising steps of preparing a substrate; forming a polycrystalline silicon layer on the substrate; injecting impurities into the polycrystalline silicon layer for channel doping; patterning the polycrystalline silicon layer and forming a semiconductor layer; annealing the semiconductor layer in an H2O atmosphere, and forming a thermal oxide layer on the semiconductor layer; forming a silicon nitride layer on the thermal oxide layer; forming a gate electrode at a location corresponding to a predetermined region of the semiconductor layer; forming an interlayer insulating layer on the entire surface of the substrate; and forming source and drain electrodes electrically connected with the semiconductor layer.

    摘要翻译： 一种制造薄膜晶体管的方法，包括制备衬底的步骤; 在所述基板上形成多晶硅层; 将杂质注入用于沟道掺杂的多晶硅层中; 图案化多晶硅层并形成半导体层; 在H 2 O气氛中退火半导体层，并在半导体层上形成热氧化物层; 在所述热氧化物层上形成氮化硅层; 在对应于半导体层的预定区域的位置处形成栅电极; 在所述基板的整个表面上形成层间绝缘层; 以及形成与半导体层电连接的源极和漏极。

    Organic light emitting diode display and manufacturing method thereof
    4.
    发明授权
    Organic light emitting diode display and manufacturing method thereof 失效
    有机发光二极管显示及其制造方法

    公开(公告)号：US08502211B2

    公开(公告)日：2013-08-06

    申请号：US13172753

    申请日：2011-06-29

    申请人： Dae-Woo Lee ,  Han-Hee Yoon ,  Kyoung-Bo Kim

    发明人： Dae-Woo Lee ,  Han-Hee Yoon ,  Kyoung-Bo Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L27/3267 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5206

    摘要： An organic light emitting diode display includes: a substrate having first and second regions; a first thin film transistor (TFT) including source and drain electrodes at the first region; a second TFT including source and drain electrodes at the second region; a protective layer on the first and second TFTs; a planarization layer pattern on the protective layer; a first pixel electrode electrically connected to the source electrode or the drain electrode of the first TFT through a first via contact hole through the protective layer; and a second pixel electrode electrically connected to the source electrode or the drain electrode of the second TFT through a second via contact hole formed through the protective layer and the planarization layer pattern, the planarization layer pattern corresponding to a shape of the second pixel electrode and located between the protective layer and the second pixel electrode.

    摘要翻译： 有机发光二极管显示器包括：具有第一和第二区域的基板; 在所述第一区域包括源电极和漏电极的第一薄膜晶体管（TFT）; 第二TFT，包括在第二区域的源极和漏极; 第一和第二TFT上的保护层; 保护层上的平坦化图案; 第一像素电极，通过穿过保护层的第一通孔接触孔电连接到第一TFT的源电极或漏电极; 以及第二像素电极，其通过形成在保护层和平坦化图案上的第二通孔接触孔与第二TFT的源电极或漏电极电连接，平坦化图案对应于第二像素电极的形状， 位于保护层和第二像素电极之间。

    Organic light emitting diode display and method of manufacturing the same
    8.
    发明申请
    Organic light emitting diode display and method of manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号：US20110049523A1

    公开(公告)日：2011-03-03

    申请号：US12805702

    申请日：2010-08-16

    申请人： Jong-Hyun Choi ,  June-Woo Lee ,  Kwang-Hae Kim ,  Kyoung-Bo Kim

    发明人： Jong-Hyun Choi ,  June-Woo Lee ,  Kwang-Hae Kim ,  Kyoung-Bo Kim

    IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L51/50

    CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/3262

    摘要： An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer.

    摘要翻译： 一种OLED显示器，包括：基板主体; 第一栅电极和第二半导体层; 在第一栅电极和第二半导体层上的栅极绝缘层; 分别覆盖所述第一栅电极和所述第二半导体层的第一半导体层和第二栅电极; 蚀刻阻挡层接触第一半导体层的部分; 在所述第一半导体层和所述第二栅电极上的层间绝缘层，并且包括分别暴露所述多个蚀刻停止层的接触孔; 层间绝缘层上的第一源电极和第一漏电极，并且所述接触孔经由所述蚀刻停止层间接地连接到所述第一半导体层，或者直接连接到所述第一半导体层; 并且所述层间绝缘层上的第二源极和第二漏极连接到所述第二半导体层。