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    Semiconductor laser diode having ridge
    2.
    发明授权
    Semiconductor laser diode having ridge 有权
    具有脊的半导体激光二极管

    公开(公告)号：US07693200B2

    公开(公告)日：2010-04-06

    申请号：US11657672

    申请日：2007-01-25

    申请人： Jung-hye Chae ,  Jong-in Shim ,  Kyoung-ho Ha ,  Kyu-sang Kim ,  Han-youl Ryu

    发明人： Jung-hye Chae ,  Jong-in Shim ,  Kyoung-ho Ha ,  Kyu-sang Kim ,  Han-youl Ryu

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/34333

    摘要： A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

    摘要翻译： 提供一种半导体激光二极管，其包括基板，以及顺序地形成在基板上的第一半导体层，有源层，第二半导体层和电极。 在半导体激光二极管中，第二半导体层具有脊，电极形成在第二半导体层的脊上，宽度小于脊的宽度。

    Vertical light emitting device and method of manufacturing the same
    4.
    发明申请
    Vertical light emitting device and method of manufacturing the same 审中-公开
    垂直发光装置及其制造方法

    公开(公告)号：US20080111139A1

    公开(公告)日：2008-05-15

    申请号：US11878348

    申请日：2007-07-24

    申请人： Jung-hye Chae ,  Myoung-gyun Suh

    发明人： Jung-hye Chae ,  Myoung-gyun Suh

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/145 ,  H01L33/405

    摘要： Provided is a vertical light emitting device having improved light extraction efficiency and a method of manufacturing the same. The vertical light emitting device may include a p type electrode, a p type semiconductor layer, an active layer, and an n type semiconductor layer which may be sequentially formed on the p type electrode, and an n type electrode on a portion of a surface of the n type semiconductor layer, wherein the portion of the surface of the n type semiconductor layer may be at an inclined plane inclined from an area near a circumference of the n type electrode towards the active layer. The p type electrode may include a current blocking layer which is made of an insulating material and on the p type electrode directly under the n type electrode. Accordingly, a voltage increase may be minimized or reduced, and light extraction efficiency may be improved.

    摘要翻译： 提供了一种具有改进的光提取效率的垂直发光器件及其制造方法。 垂直发光装置可以包括可以顺序地形成在p型电极上的p型电极，ap型半导体层，有源层和n型半导体层，以及在n型电极的表面的一部分上的n型电极 n型半导体层，其中n型半导体层的表面的部分可以处于从n型电极的圆周附近的区域向有源层倾斜的倾斜面。 p型电极可以包括由绝缘材料制成的电流阻挡层和在n型电极正下方的p型电极上。 因此，电压增加可以被最小化或降低，并且可以提高光提取效率。