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    NAND-type flash memory devices and methods of fabricating the same
    5.
    发明授权
    NAND-type flash memory devices and methods of fabricating the same 有权
    NAND型闪存器件及其制造方法

    公开(公告)号：US06376876B1

    公开(公告)日：2002-04-23

    申请号：US09678917

    申请日：2000-10-04

    申请人： Kwang-Shik Shin ,  Kyu-Charn Park ,  Heung-Kwun Oh ,  Sung-Hoi Hur

    发明人： Kwang-Shik Shin ,  Kyu-Charn Park ,  Heung-Kwun Oh ,  Sung-Hoi Hur

    IPC分类号： H01L2978

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： NAND-type flash memory devices and methods of fabricating the same are provided. The NAND-type flash memory device includes a plurality of isolation layers running parallel with each other, which are formed at predetermined regions of a semiconductor substrate. This device also includes a string selection line pattern, a plurality of word line patterns and a ground selection line pattern which cross over the isolation layers and active regions between the isolation layers. Source regions are formed in the active regions adjacent to the ground selection line patterns and opposite the string selection line pattern. The source regions and the isolation layers between the source regions are covered with a common source line running parallel with the ground selection line pattern.

    摘要翻译： 提供了NAND​​型闪存器件及其制造方法。 NAND型闪速存储器件包括彼此平行延伸的多个隔离层，它们形成在半导体衬底的预定区域。 该装置还包括串联选择线图案，多个字线图案和跨越隔离层和隔离层之间的有源区域的接地选择线图案。 源极区域形成在与地选择线图案相邻的有源区域中并且与串选择线图案相反。 源极区域和源极区域之间的隔离层被与地选择线图案平行延伸的公共源极线覆盖。

    NAND-type flash memory devices and methods of fabricating the same
    6.
    发明申请
    NAND-type flash memory devices and methods of fabricating the same 有权
    NAND型闪存器件及其制造方法

    公开(公告)号：US20050023600A1

    公开(公告)日：2005-02-03

    申请号：US10921656

    申请日：2004-08-19

    申请人： Kwang-Shik Shin ,  Kyu-Charn Park ,  Heung-Kwun Oh ,  Sung-Hoi Hur ,  Sang-Bin Song ,  Jung-Dal Choi

    发明人： Kwang-Shik Shin ,  Kyu-Charn Park ,  Heung-Kwun Oh ,  Sung-Hoi Hur ,  Sang-Bin Song ,  Jung-Dal Choi

    IPC分类号： H01L21/768 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788

    CPC分类号： H01L27/11521 ,  H01L21/76802 ,  H01L27/115 ,  H01L27/11524

    摘要： NAND-type flash memory devices and methods of fabricating the same are provided. The NAND-type flash memory device includes a plurality of isolation layers running parallel with each other, which are formed at predetermined regions of a semiconductor substrate. This device also includes a string selection line pattern, a plurality of word line patterns and a ground selection line pattern which cross over the isolation layers and active regions between the isolation layers. Source regions are formed in the active regions adjacent to the ground selection line patterns and opposite the string selection line pattern. The source regions and the isolation layers between the source regions are covered with a common source line running parallel with the ground selection line pattern.

    摘要翻译： 提供了NAND​​型闪存器件及其制造方法。 NAND型闪速存储器件包括彼此平行延伸的多个隔离层，它们形成在半导体衬底的预定区域。 该装置还包括串联选择线图案，多个字线图案和跨越隔离层和隔离层之间的有源区域的接地选择线图案。 源极区域形成在与地选择线图案相邻的有源区域中并且与串选择线图案相反。 源极区域和源极区域之间的隔离层被与地选择线图案平行延伸的公共源极线覆盖。

    NAND-type flash memory devices and methods of fabricating the same
    8.
    发明授权
    NAND-type flash memory devices and methods of fabricating the same 有权
    NAND型闪存器件及其制造方法

    公开(公告)号：US06797570B2

    公开(公告)日：2004-09-28

    申请号：US10087330

    申请日：2002-03-01

    申请人： Kwang-Shik Shin ,  Kyu-Charn Park ,  Heung-Kwun Oh ,  Sung-Hoi Hur

    发明人： Kwang-Shik Shin ,  Kyu-Charn Park ,  Heung-Kwun Oh ,  Sung-Hoi Hur

    IPC分类号： H01L21336

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： NAND-type flash memory devices and methods of fabricating the same are provided. The NAND-type flash memory device includes a plurality of isolation layers running parallel with each other, which are formed at predetermined regions of a semiconductor substrate. This device also includes a string selection line pattern, a plurality of word line patterns and a ground selection line pattern which cross over the isolation layers and active regions between the isolation layers. Source regions are formed in the active regions adjacent to the ground selection line patterns and opposite the string selection line pattern. The source regions and the isolation layers between the source regions are covered with a common source line running parallel with the ground selection line pattern.

    摘要翻译： 提供了NAND​​型闪存器件及其制造方法。 NAND型闪速存储器件包括彼此平行延伸的多个隔离层，它们形成在半导体衬底的预定区域。 该装置还包括串联选择线图案，多个字线图案和跨越隔离层和隔离层之间的有源区域的接地选择线图案。 源极区域形成在与地选择线图案相邻的有源区域中并且与串选择线图案相反。 源极区域和源极区域之间的隔离层被与地选择线图案平行延伸的公共源极线覆盖。

    Flash memory device and method of making same
    9.
    发明授权
    Flash memory device and method of making same 失效

    公开(公告)号：US06515329B2

    公开(公告)日：2003-02-04

    申请号：US10068483

    申请日：2002-02-05

    申请人： Won-Hong Lee ,  Sung-Nam Chang ,  Kyu-Charn Park

    发明人： Won-Hong Lee ,  Sung-Nam Chang ,  Kyu-Charn Park

    IPC分类号： H01L29788

    CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524

    摘要： Provided are a non-volatile flash memory device and a method of making the non-volatile flash memory device. A common source line is formed simultaneously with the formation of stacked transistors. The common source line is formed of the same material layer as floating gate pattern. The common source region and a scribe line region are simultaneously formed thorough the same photolithography process in a semiconductor substrate. Additionally, the common source line and butted contact are patterned simultaneously through the same photolithography process. Accordingly, the common source line process can be advantageously completed with very low cost and simplicity.

    Flash memory device and method of making same
    10.
    发明授权
    Flash memory device and method of making same 失效
    闪存设备及其制作方法

    公开(公告)号：US06380032B1

    公开(公告)日：2002-04-30

    申请号：US09724152

    申请日：2000-11-28

    申请人： Won-Hong Lee ,  Sung-Nam Chang ,  Kyu-Charn Park

    发明人： Won-Hong Lee ,  Sung-Nam Chang ,  Kyu-Charn Park

    IPC分类号： H01L218247

    CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524

    摘要： Provided are a non-volatile flash memory device and a method of making the non-volatile flash memory device. A common source line is formed simultaneously with the formation of stacked transistors. The common source line is formed of the same material layer as floating gate pattern. The common source region and a scribe line region are simultaneously formed thorough the same photolithography process in a semiconductor substrate. Additionally, the common source line and butted contact are patterned simultaneously through the same photolithography process. Accordingly, the common source line process can be advantageously completed with very low cost and simplicity.

    摘要翻译： 提供了一种非易失性闪存设备和制造非易失性闪存设备的方法。 共同的源极线与堆叠晶体管的形成同时形成。 公共源极线由与浮动栅极图案相同的材料层形成。 在半导体衬底中通过相同的光刻工艺同时形成公共源极区域和划线区域。 此外，通过相同的光刻工艺，共同的源极线和对接的触点被图案化。 因此，可以以非常低的成本和简单性有利地完成公共源线处理。