Display and method of driving the same
    1.
    发明授权
    Display and method of driving the same 有权
    显示和驾驶方法

    公开(公告)号:US08884862B2

    公开(公告)日:2014-11-11

    申请号:US12946176

    申请日:2010-11-15

    Abstract: A display device includes: a plurality of pixels; a data driver connected to the plurality of pixels by a plurality of data lines and applying data signals to the plurality of pixels; a scan driver connected to the plurality of pixels by a plurality of scan lines and applying scan signals to the plurality of pixels for the data signals to be applied to the plurality of pixels; a boost driver connected to the plurality of pixels by a plurality of boost lines and applying boost signals, boosting the pixel voltage charged to the plurality of pixels by the data signals, to the plurality of pixels; and a boost voltage maintaining unit applying a restoring voltage restoring the voltage in the plurality of boost lines by the scan signal to the plurality of boost lines. The voltage generated in the boost line by the coupling may be quickly restored and the crosstalk may be minimized, thereby improving the image quality.

    Abstract translation: 一种显示装置,包括:多个像素; 数据驱动器,其通过多条数据线连接到所述多个像素,并将数据信号施加到所述多个像素; 扫描驱动器,其通过多条扫描线连接到所述多个像素,并且将扫描信号施加到所述多个像素,以供应用于所述多个像素的数据信号; 升压驱动器,其通过多个升压线连接到所述多个像素,并且施加升压信号,通过所述数据信号将所述多个像素的像素电压升压到所述多个像素; 以及升压保持单元,通过所述扫描信号将多个升压线中的电压恢复到所述多个升压线路而施加恢复电压。 通过耦合在升压线中产生的电压可以快速恢复,并且串扰可以最小化,从而提高图像质量。

    Latency control circuit and semiconductor memory device including the same
    2.
    发明授权
    Latency control circuit and semiconductor memory device including the same 有权
    延迟控制电路和包括其的半导体存储器件

    公开(公告)号:US08392741B2

    公开(公告)日:2013-03-05

    申请号:US12751671

    申请日:2010-03-31

    CPC classification number: H03L7/06

    Abstract: A latency control circuit includes a delay unit configured to delay an input signal for a delay corresponding to a phase difference between an external clock and an internal clock and generate a delayed input signal, a delay information generation unit configured to generate a delay information based on a latency information and a delay amount of the input signal caused by a chip including the latency control circuit, a shift unit configured to shift the delayed input signal for a time period corresponding to the delay information in synchronism with the internal clock and an asynchronous control unit configured to selectively control the shift unit to output the delayed input signal without performing a shift operation.

    Abstract translation: 延迟控制电路包括:延迟单元,被配置为延迟与外部时钟和内部时钟之间的相位差对应的延迟的输入信号,并生成延迟的输入信号;延迟信息生成单元,被配置为基于 延迟信息和由包括等待时间控制电路的芯片引起的输入信号的延迟量;移位单元,被配置为与延迟信号相对应的延迟输入信号与内部时钟同步地移位;异步控制 单元,被配置为选择性地控制所述移位单元以输出所述延迟的输入信号,而不执行移位操作。

    Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh
    3.
    发明授权
    Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh 有权
    具有温度感测装置的半导体存储器件能够最小化刷新时的功耗

    公开(公告)号:US08355288B2

    公开(公告)日:2013-01-15

    申请号:US13240136

    申请日:2011-09-22

    Abstract: A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode for a predetermined time starting from an activation of the control signal and wherein the power save mode has substantially no power consumption. A method for driving a semiconductor memory device in accordance with the present invention includes sensing a current temperature in response to a control signal and entering a power save mode for a predetermined time starting from an activation of the control signal, wherein the power save mode has substantially no power consumption.

    Abstract translation: 能够在不受噪声影响的情况下测量温度的半导体存储器件包括用于响应于控制信号感测当前温度的温度感测装置,其中半导体存储器件从激活时开始预定的时间进入省电模式 所述控制信号并且其中所述省电模式基本上没有功率消耗。 根据本发明的用于驱动半导体存储器件的方法包括响应于控制信号感测当前温度并且从控制信号的激活开始预定时间进入省电模式,其中省电模式具有 基本上没有功耗。

    ACTIVE LEVEL SHIFT DRIVER CIRCUIT AND LIQUID CRYSTAL DISPLAY APPARATUS INCLUDING THE SAME
    4.
    发明申请
    ACTIVE LEVEL SHIFT DRIVER CIRCUIT AND LIQUID CRYSTAL DISPLAY APPARATUS INCLUDING THE SAME 有权
    主动水平移位驱动电路和液晶显示装置,包括它们

    公开(公告)号:US20120098807A1

    公开(公告)日:2012-04-26

    申请号:US13278042

    申请日:2011-10-20

    CPC classification number: G09G3/3655 G09G3/3614 G09G2300/0876 H03K19/018507

    Abstract: An active level shift (ALS) driver circuit and a liquid crystal display apparatus including the ALS driver circuit are disclosed. The ALS driver circuit includes an input unit configured to apply a first polarity voltage to a first node and to apply a second polarity voltage to a second node, a level compensation unit configured to adjust the voltages of the first node and the second node, and an output unit configured to alternately output a first power voltage and a second power voltage according to the adjusted voltages of the first and second nodes.

    Abstract translation: 公开了一种有源电平偏移(ALS)驱动电路和包括ALS驱动电路的液晶显示装置。 所述ALS驱动电路包括被配置为向第一节点施加第一极性电压并且向第二节点施加第二极性电压的输入单元,被配置为调整所述第一节点和所述第二节点的电压的电平补偿单元,以及 输出单元,被配置为根据第一和第二节点的调整的电压交替地输出第一电源电压和第二电源电压。

    CIRCUIT AND METHOD FOR RECOVERING CLOCK DATA IN HIGHLY INTEGRATED SEMICONDUCTOR MEMORY APPARATUS

    公开(公告)号:US20110211416A1

    公开(公告)日:2011-09-01

    申请号:US13105414

    申请日:2011-05-11

    CPC classification number: H03H11/26

    Abstract: Circuit and method for recovering clock data in highly integrated semiconductor memory apparatus includes a plurality of signal receiving units configured to receive signals through a plurality of input/output pads and transfer the signals according to a receiving reference clock, the signal receiving units being divided into groups, a plurality of phase detection units configured to detect phases of signals output from the groups of the signal receiving units, a plurality of phase detection control units configured to control the phase detection units so that the phase detection units sequentially detect the phases of the signals output from each of the groups of the signal receiving units and a notification unit configured to output signals output from the phase detection units.

    Delay line
    6.
    发明授权
    Delay line 失效
    延迟线

    公开(公告)号:US07982517B2

    公开(公告)日:2011-07-19

    申请号:US12627415

    申请日:2009-11-30

    Applicant: Kyung-Hoon Kim

    Inventor: Kyung-Hoon Kim

    CPC classification number: H03K5/131

    Abstract: A delay line includes a delay amount adjusting unit configured to adjust a delay amount of an input signal in response to a first delay control code, and a delay unit configured to determine a number of first delay blocks having a delay amount with a first variation width and a number of second delay blocks having a delay amount with a second variation width in response to a second delay control code, wherein the delay amount with the first variation width and the delay amount with the second variation width are determined by the delay amount adjusting unit and the first and second variation widths correspond to a level change of a power supply.

    Abstract translation: 延迟线包括延迟量调整单元,被配置为响应于第一延迟控制代码来调整输入信号的延迟量;以及延迟单元,被配置为确定具有第一变化宽度的延迟量的第一延迟块的数量 以及响应于第二延迟控制代码具有第二变化宽度的延迟量的多个第二延迟块,其中具有第一变化宽度的延迟量和具有第二变化宽度的延迟量由延迟量调整确定 单元,并且第一和第二变化宽度对应于电源的电平变化。

    Semiconductor memory device
    7.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号:US07977968B2

    公开(公告)日:2011-07-12

    申请号:US12288882

    申请日:2008-10-24

    CPC classification number: G11C7/1048 G11C11/4093

    Abstract: A semiconductor memory device includes a code channel for outputting a plurality of code signals based on a code control signal inputted from an external source; a termination resistor decoder for decoding a chip selection signal, an on die termination (ODT) control signal and the plurality of code signals and outputting a plurality of selection signals based on decoded signals; and an ODT block for providing an output data pad with impedance of a termination resistor which is selected in response to the plurality of selection signals.

    Abstract translation: 一种半导体存储器件,包括:用于基于从外部源输入的代码控制信号输出多个代码信号的代码通道; 用于解码芯片选择信号的终端电阻器解码器,芯片终端(ODT)控制信号和多个代码信号,并且基于解码的信号输出多个选择信号; 以及ODT块,用于为输出数据焊盘提供响应于所述多个选择信号而选择的终端电阻器的阻抗。

    Circuit and method for recovering clock data in highly integrated semiconductor memory apparatus
    8.
    发明授权
    Circuit and method for recovering clock data in highly integrated semiconductor memory apparatus 有权
    用于在高度集成的半导体存储装置中恢复时钟数据的电路和方法

    公开(公告)号:US07965582B2

    公开(公告)日:2011-06-21

    申请号:US12157287

    申请日:2008-06-09

    CPC classification number: H03H11/26

    Abstract: Circuit and method for recovering clock data in highly integrated semiconductor memory apparatus includes a plurality of signal receiving units configured to receive signals through a plurality of input/output pads and transfer the signals according to a receiving reference clock, the signal receiving units being divided into groups, a plurality of phase detection units configured to detect phases of signals output from the groups of the signal receiving units, a plurality of phase detection control units configured to control the phase detection units so that the phase detection units sequentially detect the phases of the signals output from each of the groups of the signal receiving units and a notification unit configured to output signals output from the phase detection units.

    Abstract translation: 用于恢复高度集成的半导体存储装置中的时钟数据的电路和方法包括:多个信号接收单元,被配置为通过多个输入/输出焊盘接收信号,并根据接收的参考时钟传送信号,信号接收单元被分成 多个相位检测单元,被配置为检测从信号接收单元的组输出的信号的相位;多个相位检测控制单元,被配置为控制相位检测单元,使得相位检测单元顺序地检测相位检测单元的相位; 从信号接收单元的每个组输出的信号和被配置为输出从相位检测单元输出的信号的通知单元。

    Duty correction circuit
    10.
    发明授权
    Duty correction circuit 有权
    负责校正电路

    公开(公告)号:US07800423B2

    公开(公告)日:2010-09-21

    申请号:US12343753

    申请日:2008-12-24

    CPC classification number: H03K5/1565 H03K2005/00065

    Abstract: A duty correction circuit includes a duty ratio sensor for controlling a duty ratio sensing speed by a sensing speed control signal and outputting a correction signal by sensing a duty ratio of a clock, and a duty ratio corrector for controlling the duty ratio of the clock in response to the correction signal.

    Abstract translation: 占空比校正电路包括占空比传感器,用于通过感测速度控制信号控制占空比感测速度,并通过感测时钟的占空比来输出校正信号;以及占空比校正器,用于控制时钟的占空比 响应于校正信号。

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