专利检索 ap:("L'Air Liquide, Société Anonyme pour I'Etude et l'Exploitation des Procédés Georges Claude") AND inv:"Peng ZHANG" 第 1 页

1.

发明申请
Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME 审中-公开

公开(公告)号：US20180022761A1

公开(公告)日：2018-01-25

申请号：US15692544

申请日：2017-08-31

申请人： L'Air Liquide, Société Anonyme pour I'Etude et l'Exploitation des Procédés Georges Claude

发明人： Jean-Marc GIRARD , Peng ZHANG , Antonio SANCHEZ , Manish KHANDELWAL , Gennediy ITOV , Reno PESARESI

IPC分类号： C07F7/02 , C01B21/087 , C23C16/515 , C23C16/34 , C23C16/40 , C23C16/455 , C01B21/088 , C23C16/30

CPC分类号： H01L21/0228 , C01B21/087 , C01B21/088 , C07F7/025 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/45553 , C23C16/515 , H01L21/02164 , H01L21/02222

摘要： Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.