公开(公告)号：US20230223237A1

公开(公告)日：2023-07-13

申请号：US18008761

申请日：2021-06-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Wei Yi LUO ,  Chih-Hsun HSU ,  Huai-Suen SHIAU ,  Tianqi WANG

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01J37/32495 ,  H01L21/3065 ,  H01J2237/3343

Abstract: A method of performing pulsed remote plasma etching includes arranging a substrate in a processing chamber configured to perform pulsed remote plasma etching, setting at least one process parameter of the processing chamber, supplying at least one gas mixture to an upper chamber region of the processing chamber, supplying, in an ON period, a first voltage to coils arranged around the upper chamber region to energize the at least one gas mixture and generate plasma within the upper chamber region of the processing chamber, turning off the first voltage in an OFF period to discontinue generating plasma within the upper chamber region of the processing chamber, and alternating between supplying the first voltage in the ON period and turning off the first voltage in the OFF period to generate pulsed remote plasma within the upper chamber region of the processing chamber.