公开(公告)号：US20230223237A1

公开(公告)日：2023-07-13

申请号：US18008761

申请日：2021-06-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Wei Yi LUO ,  Chih-Hsun HSU ,  Huai-Suen SHIAU ,  Tianqi WANG

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01J37/32495 ,  H01L21/3065 ,  H01J2237/3343

Abstract: A method of performing pulsed remote plasma etching includes arranging a substrate in a processing chamber configured to perform pulsed remote plasma etching, setting at least one process parameter of the processing chamber, supplying at least one gas mixture to an upper chamber region of the processing chamber, supplying, in an ON period, a first voltage to coils arranged around the upper chamber region to energize the at least one gas mixture and generate plasma within the upper chamber region of the processing chamber, turning off the first voltage in an OFF period to discontinue generating plasma within the upper chamber region of the processing chamber, and alternating between supplying the first voltage in the ON period and turning off the first voltage in the OFF period to generate pulsed remote plasma within the upper chamber region of the processing chamber.

公开(公告)号：US20240266147A1

公开(公告)日：2024-08-08

申请号：US18640505

申请日：2024-04-19

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton BRAVO ,  Chih-Hsun HSU ,  Serge KOSCHE ,  Stephen WHITTEN ,  Shih-Chung KON ,  Mark KAWAGUCHI ,  Himanshu CHOKSHI ,  Dan ZHANG ,  Gnanamani AMBUROSE

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.

公开(公告)号：US20220076924A1

公开(公告)日：2022-03-10

申请号：US17424381

申请日：2020-01-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton BRAVO ,  Chih-Hsun HSU ,  Serge KOSCHE ,  Stephen WHITTEN ,  Shih-Chung KON ,  Mark KAWAGUCHI ,  Himanshu CHOKSHI ,  Dan ZHANG ,  Gnanamani AMBUROSE

IPC: H01J37/32

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

公开(公告)号：US20160351418A1

公开(公告)日：2016-12-01

申请号：US14723348

申请日：2015-05-27

Applicant: Lam Research Corporation

Inventor： Chih-Hsun HSU ,  Meihua SHEN ,  Thorsten LILL

IPC: H01L21/465

CPC classification number: H01L21/465 ,  H01L21/0206 ,  H01L21/31116

Abstract: A method for selectively etching silicon oxide is provided. A surface reaction phase is provided comprising flowing a surface reaction gas comprising hydrogen, nitrogen and fluorine containing components to form silicon oxide into a compound comprising silicon, hydrogen, nitrogen, and fluorine, forming the surface reaction gas into a plasma, and stopping the flow of the surface reaction gas. The surface is wet treated to remove the compound.

Abstract translation: 提供了选择性地蚀刻氧化硅的方法。 提供了表面反应相，其包括使包含氢，含氮和氟的组分的表面反应气体流动以形成氧化硅到包含硅，氢，氮和氟的化合物中，将表面反应气体形成等离子体，并停止流动 的表面反应气体。 将表面进行湿处理以除去化合物。