公开(公告)号：US20200126795A1

公开(公告)日：2020-04-23

申请号：US16716829

申请日：2019-12-17

Applicant: Lam Research Corporation

Inventor： Yunsang S. KIM ,  Edmund Burte ,  Bodo Kalkofen

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/324 ,  H01L21/311

Abstract: A method for processing a substrate includes providing a substrate with a layer including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium. The method includes depositing a first layer on the layer of the substrate using atomic layer deposition (ALD). The method includes depositing a second layer on the first layer using ALD. Depositing one of the first layer and the second layer includes depositing phosphorus oxide and depositing the other one of the first layer and the second layer includes depositing antimony oxide. The method includes annealing the substrate to drive antimony and phosphorus from the first layer and the second layer into the layer of the substrate to create a junction.

公开(公告)号：US20210143032A1

公开(公告)日：2021-05-13

申请号：US17053110

申请日：2019-05-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Dong Woo PAENG ,  Yunsang S. KIM ,  He ZHANG ,  Keith WELLS ,  Alan M. SCHOEPP

IPC: H01L21/67 ,  H01J37/32 ,  G02B27/09 ,  G02B27/30 ,  G02F1/11 ,  C23C16/455

Abstract: A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or minors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate.

公开(公告)号：US20180358228A1

公开(公告)日：2018-12-13

申请号：US15963270

申请日：2018-04-26

Applicant: Lam Research Corporation

Inventor： Yunsang S. KIM ,  Edmund Burte ,  Bodo Kalkofen

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/324 ,  H01L21/311

Abstract: A method for processing a substrate includes providing a substrate with a layer including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium. The method includes depositing a first layer on the layer of the substrate using atomic layer deposition (ALD). The method includes depositing a second layer on the first layer using ALD. Depositing one of the first layer and the second layer includes depositing phosphorus oxide and depositing the other one of the first layer and the second layer includes depositing antimony oxide. The method includes annealing the substrate to drive antimony and phosphorus from the first layer and the second layer into the layer of the substrate to create a junction.