Abstract:
A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate.
Abstract:
An array substrate includes a substrate; gate lines over the substrate along a first direction; data lines over the substrate along a second direction and crossing the gate lines to define pixel regions; a thin film transistor at each crossing portion of the gate and data lines; an insulating layer covering the thin film transistor and having a flat top surface; a common electrode on the insulating layer all over the substrate; a common line on the common electrode; a passivation layer on the common line; and a pixel electrode on the passivation layer in each pixel region and connected to the thin film transistor, the pixel electrode including electrode patterns, wherein the passivation layer has a step height at a top surface of the passivation layer due to the plurality of common lines.
Abstract:
A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.
Abstract:
A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.
Abstract:
A color filter substrate includes a substrate in which a plurality of pixel areas are defined; a black matrix formed on the substrate, and having a plurality of openings in correspondence to the pixel areas; a color filter layer formed on the substrate, and including a red color filter, a green color filter, and a blue color filter that are sequentially arranged in a first direction in correspondence to the pixel areas; and a plurality of first column spacers and a plurality of second column spacers formed over the black matrix, and having different heights, wherein a height of each of the first column spacers is higher than a height of each of the second column spacers, and an arrangement density of the first column spacers is lower than an arrangement density of the second column spacers.