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公开(公告)号：US11682750B2
公开(公告)日：2023-06-20
申请号：US17115251
申请日：2020-12-08
Applicant: LG DISPLAY CO., LTD.
Inventor： KyungMo Son , ShunYoung Yang
CPC classification number: H01L33/486 , H01L27/156 , H01L29/7869 , H01L33/12 , H01L33/38 , H01L33/40 , H01L33/62
Abstract: Embodiments of the present invention relate to a display device in which, in a structure in which an oxide semiconductor thin film transistor is disposed on an upper layer of a low temperature polycrystalline silicon thin film transistor, the hydrogen adsorption layer is disposed on the capacitor electrode located on the driving transistor among low temperature polycrystalline silicon thin film transistors, so that it is possible to prevent the reduction of an S factor due to the re-hydrogenation of the driving transistor in the heat treatment process of the oxide semiconductor thin film transistor.
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2.发明授权公开(公告)号：US12074260B2
公开(公告)日：2024-08-27
申请号：US18144594
申请日：2023-05-08
Applicant: LG DISPLAY CO., LTD.
Inventor： KyungMo Son , ShunYoung Yang
CPC classification number: H01L33/486 , H01L27/156 , H01L29/7869 , H01L33/12 , H01L33/38 , H01L33/40 , H01L33/62
Abstract: A display device can include multiple layers, and a capacitor on the multiple layers. The capacitor can include one capacitor electrode and the other capacitor electrode, in which the one capacitor electrode is on a layer where a first gate electrode of a first thin film transistor is disposed on, and an electrode disposed on a layer where the other capacitor electrode is disposed on and made of same material with the other capacitor electrode overlaps a second thin film transistor. The display device can further include a first planarization layer and a second planarization layer on the first thin film transistor and the second thin film transistor, and a source electrode of the first thin film transistor between the first and second planarization layers.
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