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公开(公告)号:US09865841B2
公开(公告)日:2018-01-09
申请号:US15164370
申请日:2016-05-25
Applicant: LG DISPLAY CO., LTD.
Inventor: Jungyeon Kim
CPC classification number: H01L51/5253 , C08K3/22 , C08K3/26 , C08K3/36 , C09J7/10 , C09J2201/36 , C09J2203/318 , C09J2205/102 , C09J2423/00 , C09J2433/00 , C09J2477/00 , C09J2479/08 , H01L27/1248 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L51/0096 , H01L51/5246 , H01L51/5259 , H01L51/56 , H01L2227/323 , Y02E10/549
Abstract: Provided is an OLED device that includes an adhesive film having a network and a method for fabricating the same.The OLED device includes: a protective layer covering an organic light-emitting element on a substrate; a metal layer on the protective layer; and an adhesive film between the metal layer and the protective layer to attach the metal layer to the protective layer. The adhesive film includes a first adhesive layer composed of first polymers having a network structure, and a second adhesive layer composed of second polymers having a network structure and moisture absorbent. The network structure of the first polymers is bonded with the network structure of the second polymers at an interface between the first adhesive layer and the second adhesive layer.
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公开(公告)号:US11690248B2
公开(公告)日:2023-06-27
申请号:US17137897
申请日:2020-12-30
Applicant: LG Display Co., Ltd.
Inventor: Yeon Kim , Goeun Kim , HyeonTae Seo , Eunjin Kim , Jungyeon Kim , JinHo Kim , Tae-Hoon Kim , KyoungHoon Kim , KwangSeon Lee , Hongdae Shin
IPC: H01L51/52 , H01L51/10 , H01L51/44 , H01L27/32 , H10K50/84 , H10K50/844 , H10K10/88 , H10K30/88 , H10K50/818 , H10K50/86 , H10K50/842 , H10K59/35 , H10K59/38 , H10K59/122 , H10K59/124 , H10K102/00
CPC classification number: H10K50/846 , H10K50/844 , H10K10/88 , H10K30/88 , H10K50/818 , H10K50/84 , H10K50/8426 , H10K50/865 , H10K59/122 , H10K59/124 , H10K59/35 , H10K59/351 , H10K59/353 , H10K59/38 , H10K2102/00
Abstract: A light emitting display device includes a lower substrate, a thin film transistor on the lower substrate, a passivation layer disposed on the thin film transistor and including hydrogen, an overcoating layer disposed on the passivation layer and planarizing the passivation layer, a light emitting element disposed on the overcoating layer and including an anode, a light emitting layer on the anode, and a cathode on the light emitting layer, a bank disposed on the overcoating layer and defining a light emitting area, an adhesive layer on the light emitting element and the bank, and a hydrogen absorbing layer disposed on the adhesive layer and including a hydrogen absorbing filler, wherein a side end of the bank is disposed more inwardly than side ends of the adhesive layer and the hydrogen absorbing layer, wherein the side ends of the adhesive layer and the hydrogen absorbing layer are disposed more inwardly than a side end of the overcoating layer.
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