公开(公告)号：US20240260317A1

公开(公告)日：2024-08-01

申请号：US18633027

申请日：2024-04-11

Applicant: LG Display Co., Ltd.

Inventor： Kyoung-Nam Lim ,  Yu-Ho Jung ,  Dong-Young Kim

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K59/35 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K77/111 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H10K59/352 ,  H10K59/353 ,  H10K2102/311 ,  H10K2102/341

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

公开(公告)号：US11985858B2

公开(公告)日：2024-05-14

申请号：US18218549

申请日：2023-07-05

Applicant: LG Display Co., Ltd.

Inventor： Kyoung-Nam Lim ,  Yu-Ho Jung ,  Dong-Young Kim

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K59/35 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K77/111 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H10K59/352 ,  H10K59/353 ,  H10K2102/311 ,  H10K2102/341

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

公开(公告)号：US11004923B2

公开(公告)日：2021-05-11

申请号：US16206802

申请日：2018-11-30

Applicant: LG Display Co., Ltd.

Inventor： Kyoung-Nam Lim ,  Yu-Ho Jung ,  Dong-Young Kim

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/00 ,  H01L29/786 ,  H01L27/12

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

公开(公告)号：US20240414945A1

公开(公告)日：2024-12-12

申请号：US18813945

申请日：2024-08-23

Applicant: LG Display Co., Ltd.

Inventor： Dong-Young Kim ,  Kyoung-Nam Lim ,  Yu-Ho Jung

IPC: H10K59/121 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/786 ,  H10K50/11 ,  H10K59/122 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K59/35 ,  H10K77/10 ,  H10K102/00

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

公开(公告)号：US20240172479A1

公开(公告)日：2024-05-23

申请号：US18429968

申请日：2024-02-01

Applicant: LG Display Co., Ltd.

Inventor： Kyoung-Nam Lim ,  Yu-Ho Jung ,  Dong-Young Kim

IPC: H10K59/121 ,  H01L27/12 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K77/10 ,  H01L29/786 ,  H10K59/12 ,  H10K59/35 ,  H10K102/00

CPC classification number: H10K59/1213 ,  H01L27/1244 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K77/111 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1288 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H10K59/1201 ,  H10K59/353 ,  H10K2102/311 ,  H10K2102/341

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

公开(公告)号：US11765937B2

公开(公告)日：2023-09-19

申请号：US17953571

申请日：2022-09-27

Applicant: LG Display Co., Ltd.

Inventor： Kyoung-Nam Lim ,  Yu-Ho Jung ,  Dong-Young Kim

IPC: H10K59/121 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K77/10 ,  H01L29/786 ,  H01L27/12 ,  H10K59/35 ,  H10K102/00

CPC classification number: H10K59/1213 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/1216 ,  H10K59/131 ,  H10K77/111 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78675 ,  H10K59/352 ,  H10K59/353 ,  H10K2102/311 ,  H10K2102/341

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

公开(公告)号：US11574977B2

公开(公告)日：2023-02-07

申请号：US17735797

申请日：2022-05-03

Applicant: LG Display Co., Ltd.

Inventor： Dong-Young Kim ,  Kyoung-Nam Lim ,  Yu-Ho Jung

IPC: G09G3/3266 ,  H01L27/32 ,  H01L27/12 ,  H01L51/00 ,  G09G3/3291 ,  H01L51/50 ,  H01L29/786

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

公开(公告)号：US11489030B2

公开(公告)日：2022-11-01

申请号：US17227011

申请日：2021-04-09

Applicant: LG Display Co., Ltd.

Inventor： Kyoung-Nam Lim ,  Yu-Ho Jung ,  Dong-Young Kim

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/00 ,  H01L29/786 ,  H01L27/12

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

公开(公告)号：US11430848B2

公开(公告)日：2022-08-30

申请号：US17005061

申请日：2020-08-27

Applicant: LG Display Co., Ltd.

Inventor： Dong-Young Kim ,  Kyoung-Nam Lim ,  Yu-Ho Jung

IPC: G09G3/32 ,  H01L27/32 ,  H01L27/12 ,  H01L51/00 ,  G09G3/3266 ,  G09G3/3291 ,  H01L51/50 ,  H01L29/786

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

公开(公告)号：US10930722B2

公开(公告)日：2021-02-23

申请号：US16206820

申请日：2018-11-30

Applicant: LG Display Co., Ltd.

Inventor： Dong-Young Kim ,  Kyoung-Nam Lim ,  Yu-Ho Jung

IPC: H01L27/32 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L51/52 ,  H01L29/786

Abstract: A display device is capable of realizing low power consumption since a first thin-film transistor having a polycrystalline semiconductor layer and a second thin-film transistor having an oxide semiconductor layer are disposed in an active area. In addition, an opening formed in a bending area is formed to have the same depth as at least one of a plurality of contact holes formed in at least one inorganic insulation layer, which is disposed in the active area, and source and drain electrodes of the second thin-film transistor and source and drain electrodes of the first thin-film transistor, which are disposed below the oxide semiconductor layer, are formed in the same plane using the same material, which simplifies the manufacturing process of the display device.