公开(公告)号：US09754551B2

公开(公告)日：2017-09-05

申请号：US14953614

申请日：2015-11-30

Applicant: LG Display Co., Ltd.

Inventor： Hun Jeoung ,  Sanghee Yu ,  Sunghyun Cho ,  Bosun Lee ,  Byoungwoo Kim ,  Sungwook Chang

IPC: G09G3/36 ,  G09G5/00 ,  G11C19/28

CPC classification number: G09G5/003 ,  G09G3/3677 ,  G09G3/3696 ,  G09G2310/0251 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2310/063 ,  G09G2310/08 ,  G09G2320/0257 ,  G09G2330/027 ,  G09G2330/04 ,  G11C19/28

Abstract: A display panel and a method of driving the same are disclosed. The display panel includes a shift register with a plurality of stages configured to shift and to output a scan pulse for a plurality of scan lines. Each stage includes a pull-up transistor and a pull-down transistor coupled in series and defining an output node therebetween, a driver with a first node coupled to a gate electrode of the pull-up transistor and a second node coupled to a gate electrode of the pull-down transistor; and a node controller coupled to the first node, the second node, and the output node. In each stage, the node controller is configured to selectively apply a reference voltage at the first node and the second node in response to a control signal.

公开(公告)号：US08835919B2

公开(公告)日：2014-09-16

申请号：US13727269

申请日：2012-12-26

Applicant: LG Display Co., Ltd.

Inventor： Sanghee Yu

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/786

Abstract: A thin film transistor substrate and a method for manufacturing the same are disclosed. The thin film transistor substrate includes a gate electrode disposed on a substrate, a gate insulating film disposed on the gate electrode, an active layer disposed on the gate insulating film and including metal oxide, a source electrode contacted with one side of the active layer and a pixel electrode contacted with the other side of the active layer; and an etch stopper interposed between the source electrode and the pixel electrode.

Abstract translation: 公开了一种薄膜晶体管基板及其制造方法。 薄膜晶体管基板包括设置在基板上的栅极电极，设置在栅电极上的栅极绝缘膜，设置在栅极绝缘膜上并包括金属氧化物的有源层，与活性层一侧接触的源电极和 与活性层的另一侧接触的像素电极; 以及插入在源极和像素电极之间的蚀刻阻挡层。

公开(公告)号：US20140008645A1

公开(公告)日：2014-01-09

申请号：US13727269

申请日：2012-12-26

Applicant: LG DISPLAY CO., LTD.

Inventor： Sanghee Yu

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/786

Abstract: A thin film transistor substrate and a method for manufacturing the same are disclosed. The thin film transistor substrate includes a gate electrode disposed on a substrate, a gate insulating film disposed on the gate electrode, an active layer disposed on the gate insulating film and including metal oxide, a source electrode contacted with one side of the active layer and a pixel electrode contacted with the other side of the active layer; and an etch stopper interposed between the source electrode and the pixel electrode.

Abstract translation: 公开了一种薄膜晶体管基板及其制造方法。 薄膜晶体管基板包括设置在基板上的栅极电极，设置在栅电极上的栅极绝缘膜，设置在栅极绝缘膜上并包括金属氧化物的有源层，与活性层一侧接触的源电极和 与活性层的另一侧接触的像素电极; 以及插入在源极和像素电极之间的蚀刻阻挡层。