公开(公告)号：US20150243723A1

公开(公告)日：2015-08-27

申请号：US14628411

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Seongpil CHO ,  Yongil KIM

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）基板和使用其的显示器。 TFT基板包括：基板，在基板上的第一TFT，包括：多晶半导体层，其上的第一栅电极，第一源电极和第一漏电极，基板上的第二TFT，包括：第二TFT 栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在第一栅电极上包括氮化物层的中间绝缘层和覆盖第二栅电极的氧化物层，在 所述中间绝缘层在所述氧化物层上并且与所述第二栅电极重叠，其中所述第一源极，第一漏极和所述第二栅电极位于所述中间绝缘层和所述氧化物层之间，并且其中所述第二源极和所述第二漏极 在氧化物半导体层上。

公开(公告)号：US20150092136A1

公开(公告)日：2015-04-02

申请号：US14501392

申请日：2014-09-30

Applicant: LG DISPLAY CO., LTD.

Inventor： Minjoo KIM ,  Soyoung NOH ,  Yongil KIM ,  Taehwan KIM

IPC: G02F1/1368 ,  G02F1/1362

CPC classification number: G02F1/136227 ,  G02F1/134363 ,  G02F2001/134372

Abstract: A disclosed liquid crystal display includes a substrate with a gate electrode, a gate insulation film, an active layer, a source electrode, a drain electrode, and a first passivation film formed on the substrate. An organic insulation film having a first contact hole and a common electrode having a second contact hole are formed on the first passivation film using a single mask. The display also includes a second passivation film on the common electrode, and a pixel electrode on the second passivation film and connected to the drain electrode via the contact hole through the second passivation film. The top surface of the organic insulation film adjacent to a side edge of the organic insulation film is uncovered by the common electrode.

Abstract translation: 所公开的液晶显示器包括具有栅电极的基板，栅极绝缘膜，有源层，源电极，漏电极和形成在基板上的第一钝化膜。 使用单个掩模在第一钝化膜上形成具有第一接触孔和具有第二接触孔的公共电极的有机绝缘膜。 所述显示器还包括在所述公共电极上的第二钝化膜，以及所述第二钝化膜上的像素电极，并且经由所述接触孔通过所述第二钝化膜连接到所述漏电极。 与有机绝缘膜的侧边缘相邻的有机绝缘膜的顶表面被公共电极覆盖。

公开(公告)号：US20150340412A1

公开(公告)日：2015-11-26

申请号：US14584042

申请日：2014-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jinbok LEE ,  Yongil KIM ,  Eunhye LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3244 ,  H01L27/322 ,  H01L51/5268 ,  H01L51/5271 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/558

Abstract: A flat panel display having a low reflective black matrix and a method for manufacturing the same are provided. The flat panel display includes a substrate having an open area and a non-open area; a hazy layer disposed in the non-open area on the inner surface of the substrate; a black matrix stacked on the hazy layer; a driving element disposed in the non-opening area; and a display element disposed in the open area and driven by the driving element.

Abstract translation: 提供了具有低反射黑矩阵的平板显示器及其制造方法。 平板显示器包括具有开放区域和非开放区域的基板; 设置在所述基板的内表面上的非开放区域中的模糊层; 堆叠在朦胧层上的黑色矩阵; 设置在所述非开口区域中的驱动元件; 以及设置在所述开放区域中并由所述驱动元件驱动的显示元件。

公开(公告)号：US20150243724A1

公开(公告)日：2015-08-27

申请号：US14629544

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Seongpil CHO ,  Yongil KIM

IPC: H01L27/32 ,  H01L29/04 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3276 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A display includes: a first TFT, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT, including: a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）基板和使用其的显示器。 一种显示器包括：第一TFT，包括：多晶半导体层，其上的第一栅电极，第一源电极和第一漏电极，第二TFT，包括：第二栅电极，第二栅电极，第二栅电极， 栅极电极，第二源电极和第二漏极电极，在第一栅电极上包括氮化物层的中间绝缘层和覆盖第二栅电极的氧化物层，在中间绝缘层上，在氧化物层上， 并且与第二栅电极重叠，其中第一源极，第一漏极和第二栅电极在中间绝缘层和氧化物层之间，并且其中第二源极和第二漏极电极在氧化物半导体层上。

公开(公告)号：US20160043113A1

公开(公告)日：2016-02-11

申请号：US14921099

申请日：2015-10-23

Applicant: LG Display Co., Ltd.

Inventor： Seongpil CHO ,  Yongil KIM

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.