公开(公告)号：US20200185556A1

公开(公告)日：2020-06-11

申请号：US16704896

申请日：2019-12-05

Applicant: LG ELECTRONICS INC.

Inventor： Jae Won CHANG ,  Hyun Jung PARK ,  In Do CHUNG ,  Ji Soo KO

IPC: H01L31/048 ,  H01L31/0224 ,  H01L31/0468

Abstract: Discussed is a solar cell including a semiconductor substrate, a conductive region disposed in the semiconductor substrate or over the semiconductor substrate, and an electrode electrically connected to the conductive region. The electrode includes a first electrode part and a second electrode part disposed over the first electrode part. The second electrode part includes a particle connection layer formed by connecting a plurality of particles including a first metal and a cover layer including a second metal different from the first metal and covering at least the outside surface of the particle connection layer.

公开(公告)号：US20150004742A1

公开(公告)日：2015-01-01

申请号：US14490338

申请日：2014-09-18

Applicant: LG ELECTRONICS INC.

Inventor： Hyun Jung PARK ,  Jin Ho KIM

IPC: H01L31/028 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/0236

CPC classification number: H01L31/028 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0232 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A fabrication method of a solar cell, the method includes doping a silicon substrate having a first conductive type impurity with a second conductive type impurity, the second conductive type impurity being opposite to the first conductive type impurity, and thereby forming an emitter layer at a front surface part of the silicon substrate, forming an antireflection film on the emitter layer, forming a front electrode on the antireflection film, forming a rear electrode on a rear surface of the silicon substrate, and forming a back surface field layer at a rear surface part of the silicon substrate, the back surface field layer having a concentration of the first conductive type impurity that is higher than that of the silicon substrate, the back surface field layer having a different concentration of the second conductive type impurity from that of the emitter layer.

Abstract translation: 一种太阳能电池的制造方法，其特征在于，将具有第一导电型杂质的硅衬底与第二导电型杂质掺杂，第二导电型杂质与第一导电型杂质相反，由此在 在硅衬底的前表面部分上，在发射极层上形成防反射膜，在防反射膜上形成前电极，在硅衬底的背面形成后电极，在后表面形成背面场层 硅衬底的一部分，背面场层的第一导电型杂质的浓度高于硅衬底的浓度，背面场层的第二导电型杂质浓度与发射极的浓度不同 层。

公开(公告)号：US20200220034A1

公开(公告)日：2020-07-09

申请号：US16736201

申请日：2020-01-07

Applicant: LG ELECTRONICS INC.

Inventor： Jae Won CHANG ,  Hyun Jung PARK

IPC: H01L31/0224 ,  H01L31/02

Abstract: Discussed is a solar cell including a semiconductor substrate having an inclined part; first and second conductivity type regions formed at or on one surface of the semiconductor substrate; a first electrode connected to the first conductivity type region on the one surface of the semiconductor substrate; and a second electrode connected to the second conductivity type region on the one surface of the semiconductor substrate. At least one of the first and second electrodes includes a finger part including a plurality of inner finger parts extending in a first direction, and a plurality of outer finger parts extending in the first direction adjacent to an edge of the semiconductor substrate; and a connection part connecting at least some of the plurality of outer finger parts on one side of the semiconductor substrate adjacent to the inclined part.