公开(公告)号：US20190385991A1

公开(公告)日：2019-12-19

申请号：US16479483

申请日：2017-04-25

Applicant: LG ELECTRONICS INC.

Inventor： Seonhoo KIM

IPC: H01L25/16 ,  H01L25/075

Abstract: The present invention relates to a display device using a semiconductor light-emitting element and, particularly, to a display device using a semiconductor light-emitting element. A display device according to the present invention comprises: a substrate including a driving thin-film transistor; a semiconductor light-emitting element including a first conductive electrode and a second conductive electrode; and a planarization layer formed to cover the driving thin-film transistor and including a reception hole in which the semiconductor light-emitting element is received, wherein a height adjustment layer is formed between the substrate and the planarization layer so as to make one of the first and the second conductive electrode and one surface of the planarization layer coincide with each other in height.

公开(公告)号：US20180277524A1

公开(公告)日：2018-09-27

申请号：US15754900

申请日：2016-08-26

Applicant: LG ELECTRONICS INC.

Inventor： Sunghyun MOON ,  Younghak CHANG ,  Jina JEON ,  Seonhoo KIM ,  Youngjoo YEE ,  Hwankuk YUH

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/22

CPC classification number: H01L25/0753 ,  H01L21/677 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present invention relates to a display device and, more particularly, to a transfer head for a semiconductor light-emitting device applied to the display device and a method for transferring a semiconductor light-emitting device. The transfer head for a semiconductor light-emitting device, according to the present invention, comprises: a base substrate; and an electrode unit disposed on the base substrate to generate an electrostatic force by charging an un-doped semiconductor layer of the semiconductor light-emitting device with electric charges, wherein the base substrate and the electrode unit are formed of light-transmitting materials so that at least a part of the semiconductor light-emitting device is viewable through the base substrate and the electrode unit in sequence.