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公开(公告)号:US20240332473A1
公开(公告)日:2024-10-03
申请号:US18578185
申请日:2021-07-28
Applicant: LG ELECTRONICS INC.
Inventor: Sunghyun MOON , Myoungsoo KIM , Yoonchul KIM , Jungsub KIM
CPC classification number: H01L33/62 , H01L25/167
Abstract: The display device can include a barrier rib disposed on a substrate and having an assembly hole, a conductor in the assembly hole, and a semiconductor light emitting device disposed on the conductor within the assembly hole. The conductor can include a first conductor between the substrate and the semiconductor light emitting device, and a second conductor between the inside of the assembly hole and the outside of the semiconductor light emitting device.
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公开(公告)号:US20220416125A1
公开(公告)日:2022-12-29
申请号:US17763050
申请日:2019-09-25
Applicant: LG ELECTRONICS INC.
Inventor: Jina JEON , Yongdae KIM , Myoungsoo KIM , Yoonchul KIM , Jungsub KIM , Sunghyun MOON , Yeonhong JUNG
IPC: H01L33/38 , H01L33/00 , H01L33/62 , H01L25/075
Abstract: Discussed is a manufacturing method of a display apparatus, and the display apparatus. The display includes a substrate, an adhesive layer located on the substrate and including protruding portions, semiconductor light-emitting diodes located on the adhesive layer, an insulating layer located on the semiconductor light-emitting diodes and the adhesive layer, and wiring electrodes electrically connected to the semiconductor light-emitting diodes, wherein the protruding portions of the adhesive layer are positioned at regular intervals to correspond to the shapes of the contact surfaces of the semiconductor light-emitting diodes in contact with the adhesive layer.
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3.
公开(公告)号:US20200373473A1
公开(公告)日:2020-11-26
申请号:US16965235
申请日:2018-01-29
Applicant: LG ELECTRONICS INC.
Inventor: Kyoungtae WI , Sunghyun MOON , Jina JEON
Abstract: The present invention relates to a method for manufacturing a display device using semiconductor light-emitting elements and a display device. The method for manufacturing a display device according to the present invention comprises the steps of: transferring semiconductor light-emitting elements provided on a growth substrate to an adhesive layer of a temporary substrate; curing the adhesive layer of the temporary substrate; aligning the temporary substrate with a wiring substrate having a wiring electrode and a conductive adhesive layer; compressing the temporary substrate to the wiring substrate so that the semiconductor light-emitting elements bond to the wiring substrate together with the adhesive layer of the temporary substrate, and then removing the temporary substrate; and removing at least a part of the adhesive layer to expose the semiconductor light-emitting elements to the outside, and depositing electrodes on the semiconductor light-emitting elements.
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公开(公告)号:US20230117219A1
公开(公告)日:2023-04-20
申请号:US18083152
申请日:2022-12-16
Applicant: LG ELECTRONICS INC.
Inventor: Kyoungtae WI , Sunghyun MOON , Jina JEON
Abstract: A display device can include a wiring substrate including a first electrode, a plurality of semiconductor light-emitting elements electrically connected to the first electrode, a conductive adhesive layer on the wiring substrate and around the plurality of semiconductor light-emitting elements, an upper layer on one surface of the conductive adhesive layer and including a plurality of through holes corresponding to the plurality of semiconductor light-emitting elements, respectively, and a second electrode on the upper layer and electrically connected to the plurality of semiconductor light-emitting elements. The upper layer can include a thermosetting adhesive.
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公开(公告)号:US20210313490A1
公开(公告)日:2021-10-07
申请号:US17266406
申请日:2018-08-29
Applicant: LG ELECTRONICS INC.
Inventor: Jungsub KIM , Sunghyun MOON , Younghak CHANG , Jina JEON
IPC: H01L33/38 , H01L25/075 , H01L33/40 , H01L33/44
Abstract: Discussed is a display device having a plurality of semiconductor light-emitting diodes. At least one of the semiconductor light-emitting diodes has a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer that overlaps with the first conductive semiconductor layer, and the second conductive electrode being disposed on the second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; an undoped semiconductor layer disposed on the second conductive semiconductor layer; and protrusions formed of a porous material allowing electropolishing, and on the undoped semiconductor layer.
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6.
公开(公告)号:US20230127225A1
公开(公告)日:2023-04-27
申请号:US17910275
申请日:2020-03-13
Applicant: LG ELECTRONICS INC.
Inventor: Jungsub KIM , Yeonhong JUNG , Sunghyun MOON , Myoungsoo KIM , Yoonchul KIM
IPC: H01L33/60 , H01L25/075 , H01L33/52
Abstract: The display device according to the present invention comprises: a substrate; semiconductor light-emitting diodes disposed on the substrate; a planarization layer formed so as to cover the semiconductor light-emitting diodes; and wire electrodes electrically connected to the semiconductor light-emitting diodes, wherein the substrate comprises individual pixel areas in which the semiconductor light-emitting diodes are disposed, and the individual pixel areas are each any one of first individual pixel areas, in which the semiconductor light-emitting diodes are disposed and which emit the light output by the semiconductor light-emitting diodes, and second individual pixel areas, in which a repair layer is disposed so as to emit the light output by an adjacent first individual pixel area.
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公开(公告)号:US20220367774A1
公开(公告)日:2022-11-17
申请号:US17761516
申请日:2019-09-18
Applicant: LG ELECTRONICS INC.
Inventor: Myoungsoo KIM , Sunghyun MOON , Jisoo KO , Jungsub KIM , Bongchu SHIM , Wonjae CHANG
IPC: H01L33/62 , H01L25/075 , H01L33/00 , H01L33/22 , H01L33/44
Abstract: Discussed is a manufacturing method of a display device. The manufacturing method includes forming a semiconductor light emitting element comprising an assembly blocking layer formed on one surface of the semiconductor light emitting element; preparing an assembly substrate comprising an assembly recess and configured such that the semiconductor light emitting element is assembled in the assembly recess; putting the semiconductor light emitting element into a chamber filled with a fluid; locating the assembly substrate on an upper surface of the chamber, and assembling the semiconductor light emitting element in the assembly recess of the assembly substrate using a magnetic field and an electric field; and transferring the semiconductor light emitting element assembled in the assembly recess of the assembly substrate to a wiring substrate.
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8.
公开(公告)号:US20220277983A1
公开(公告)日:2022-09-01
申请号:US17630288
申请日:2019-08-07
Applicant: LG ELECTRONICS INC.
Inventor: Jungsub KIM , Yongdae KIM , Sunghyun MOON
IPC: H01L21/683 , G03F7/00
Abstract: Disclosed, in the present specification, is a transfer substrate for transferring a semiconductor light emitting device with high reliability and a method for manufacturing a display device by using same. Specifically, the transfer substrate includes an organic stamp layer having a protrusion, wherein the organic stamp layer contains a plurality of inorganic fillers, and the concentration of the inorganic fillers is formed so as to increase as the distance from the protrusion increases. Therefore, the protrusion of the organic stamp layer has a low concentration of the inorganic fillers so as to maintain sufficient adhesion for transferring the semiconductor light emitting device, and the stiffness of the organic stamp layer itself is formed so as to be much stronger than that of a stamp layer using a single organic material. Accordingly, it is possible to improve the accuracy of transfer by minimizing an arrangement error of the semiconductor light emitting device due to the deformation of the stamp layer occurring in a transfer process. Accordingly, it is possible to improve the accuracy of transfer by minimizing an arrangement error of the semiconductor light emitting device caused by the deformation of the stamp layer occurring during a transfer process.
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公开(公告)号:US20210320146A1
公开(公告)日:2021-10-14
申请号:US17259084
申请日:2018-08-29
Applicant: LG ELECTRONICS INC.
Inventor: Jungsub KIM , Sunghyun MOON , Younghak CHANG , Jina JEON
Abstract: A display device is discussed. The Display device includes a plurality of semiconductor light-emitting elements on a substrate, wherein the substrate includes: a base substrate; an insulating layer on the base substrate; and pads protruding farther than the insulating layer and enabling the semiconductor light-emitting elements to in contact, wherein the insulating layer includes inorganic particles, and at least a portion of some of the inorganic particles is formed so as to protrude from a surface of the insulating layer.
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公开(公告)号:US20180277524A1
公开(公告)日:2018-09-27
申请号:US15754900
申请日:2016-08-26
Applicant: LG ELECTRONICS INC.
Inventor: Sunghyun MOON , Younghak CHANG , Jina JEON , Seonhoo KIM , Youngjoo YEE , Hwankuk YUH
IPC: H01L25/075 , H01L33/62 , H01L33/22
CPC classification number: H01L25/0753 , H01L21/677 , H01L21/6835 , H01L33/0095 , H01L33/22 , H01L33/62 , H01L2221/68354 , H01L2933/0033 , H01L2933/0066
Abstract: The present invention relates to a display device and, more particularly, to a transfer head for a semiconductor light-emitting device applied to the display device and a method for transferring a semiconductor light-emitting device. The transfer head for a semiconductor light-emitting device, according to the present invention, comprises: a base substrate; and an electrode unit disposed on the base substrate to generate an electrostatic force by charging an un-doped semiconductor layer of the semiconductor light-emitting device with electric charges, wherein the base substrate and the electrode unit are formed of light-transmitting materials so that at least a part of the semiconductor light-emitting device is viewable through the base substrate and the electrode unit in sequence.
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