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公开(公告)号:US20190245101A1
公开(公告)日:2019-08-08
申请号:US16388491
申请日:2019-04-18
Applicant: LG ELECTRONICS INC.
Inventor: Jungmin HA , Youngho CHOE , Changseo PARK
IPC: H01L31/0224 , H01L31/0236 , H01L31/0216 , H01L31/068
CPC classification number: H01L31/022441 , H01L31/02168 , H01L31/02363 , H01L31/0684 , Y02E10/547
Abstract: A bifacial solar cell includes a substrate formed of a silicon wafer having an n-type conductivity; an emitter region positioned on a front surface of the substrate and having a p-type conductivity; a front negative fixed charge layer on the emitter region, and a front positive fixed charge layer on the front negative fixed charge; a plurality of first front electrodes extending in a first direction and connected to the emitter region through the front negative fixed charge layer and the front positive fixed charge layer; a plurality of second front electrodes extending in a second direction crossing the first direction and electrically and physically connected to the plurality of first front electrodes; a back aluminum oxide layer and a back silicon nitride layer on a back surface of the substrate; a plurality of back surface field regions extending in the first direction and locally positioned on the back surface of the substrate; a plurality of first back electrodes extending in the first direction and directly positioned on the plurality of back surface field regions through the back aluminum oxide layer and the back silicon nitride layer; and a plurality of second back electrodes extending in the second direction and electrically and physically connected to the plurality of first back electrodes, wherein the front negative fixed charge layer and the back aluminum oxide layer have the same thickness.
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公开(公告)号:US20150255642A1
公开(公告)日:2015-09-10
申请号:US14716539
申请日:2015-05-19
Applicant: LG ELECTRONICS INC.
Inventor: Jinsung KIM , Chulchae CHOI , Changseo PARK , Jaewon CHANG , Hyungseok KIM , Youngho CHOE , Philwon Yoon
IPC: H01L31/0236 , H01L31/0224 , H01L31/0216
CPC classification number: H01L31/02366 , H01L31/02168 , H01L31/022433 , H01L31/0236 , H01L31/02363 , H01L31/03529 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: The present invention relates to a solar cell. The solar cell includes a substrate of a first conductive type, the substrate having a textured surface on which a plurality of projected portions are formed, and surfaces of the projected portions having at least one of a plurality of particles attached thereto and a plurality of depressions formed thereon; an emitter layer of a second conductive type opposite the first conductive type, the emitter layer being positioned in the substrate so that the emitter layer has the textured surface; an anti-reflection layer positioned on the emitter layer which has the textured surface and including at least one layer; a plurality of first electrodes electrically connected to the emitter layer; and at least one second electrode electrically connected to the substrate.
Abstract translation: 本发明涉及一种太阳能电池。 太阳能电池包括第一导电类型的基板,该基板具有纹理表面,多个凸起部分形成在其上,并且突出部分的表面具有附着到其上的多个颗粒中的至少一个和多个凹陷部分 在其上形成; 与第一导电类型相反的第二导电类型的发射极层,发射极层位于衬底中,使得发射极层具有纹理表面; 位于发射极层上的防反射层,其具有纹理表面并且包括至少一个层; 电连接到发射极层的多个第一电极; 以及至少一个第二电极,其电连接到所述衬底。
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公开(公告)号:US20140099747A1
公开(公告)日:2014-04-10
申请号:US14041907
申请日:2013-12-18
Applicant: LG ELECTRONICS INC.
Inventor: Yoonsil JIN , Goohwan SHIM , Youngho CHOE , Changseo PARK
IPC: H01L31/0236 , H01L31/18
CPC classification number: H01L31/02366 , H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.
Abstract translation: 半导体器件包括衬底和第一绝缘层。 第一绝缘层包括第一下层和第一下层上的第一上层。 第一绝缘层具有穿过第一下层和第一上层的第一开口。 第一下层的第一开口的最大宽度不同于第一上层的第一开口的最大宽度。
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公开(公告)号:US20170125617A1
公开(公告)日:2017-05-04
申请号:US15357532
申请日:2016-11-21
Applicant: LG ELECTRONICS INC.
Inventor: Sungeun LEE , Youngho CHOE
IPC: H01L31/0224 , H01L31/068 , H01L31/0216 , H01L31/18 , H01L31/0236
CPC classification number: H01L31/022441 , H01L31/02168 , H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/02366 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1864 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: A method of manufacturing a solar cell is discussed. The method includes forming a textured structure on a front surface of a silicon substrate; forming a front passivation layer on the front surface of the silicon substrate; forming an anti-reflection layer on the front passivation layer; forming a first layer having a dopant of a first conductive type on a first portion of a rear surface of the silicon substrate; forming a second layer having a dopant of a second conductive type on the first layer and a second portion of the rear surface of the silicon substrate; diffusing the dopant of the first layer and the dopant of the second layer into the silicon substrate to form a n-doped region and a p-doped region, respectively, wherein the n-doped region and the p-doped region are disposed at about a same depth from the rear surface of the silicon substrate.
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公开(公告)号:US20190296171A1
公开(公告)日:2019-09-26
申请号:US16293371
申请日:2019-03-05
Applicant: LG ELECTRONICS INC.
Inventor: Jaewon CHANG , Youngho CHOE , Jinsung KIM
IPC: H01L31/05 , H01L31/0216 , H01L31/0236 , H01L31/0352 , H01L31/048 , H01L31/068 , H01L31/044 , H01L31/18 , H02S40/34 , H01L31/0224 , H01L31/02
Abstract: A solar cell module can include an octagonal-shaped semiconductor substrate having a chamfer formed at each edge among at least two opposite edges of the octagonal-shaped semiconductor; and a first electrode unit formed on one surface of the octagonal-shaped semiconductor substrate, the first electrode unit including: a plurality of first sub-electrodes including first finger electrodes and a first bus bar electrode connected to ends of the first finger electrodes, and a plurality of second sub-electrodes including second finger electrodes and a second bus bar electrode connected to ends of the second finger electrodes, in which the plurality of first sub-electrodes are spaced apart from the plurality of second sub-electrodes in a first direction, and a first sub-electrode disposed adjacent to a chamfer at a first edge among the at least two opposite edges in the first direction among the plurality of first sub-electrodes, and a second sub-electrode disposed adjacent to another chamfer at a second edge among the at least two opposite edges are symmetrical in a longitudinal direction of the first and second bus bar electrodes.
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公开(公告)号:US20180233621A1
公开(公告)日:2018-08-16
申请号:US15950477
申请日:2018-04-11
Applicant: LG ELECTRONICS INC.
Inventor: Goohwan SHIM , Changseo PARK , Philwon YOON , Yoonsil JIN , Jinsung KIM , Youngho CHOE , Jaewon CHANG
IPC: H01L31/18 , H01L31/068 , H01L31/0224 , H01L31/0216
Abstract: A method for manufacturing a solar cell includes forming an emitter layer on a first surface of a substrate, forming a back surface field layer on a second surface opposite the first surface of the substrate, forming a first anti-reflection layer on the emitter layer, forming a second anti-reflection layer on the back surface field layer, and forming a plurality of first electrodes each including a first metal seed layer and a first conductive layer on a plurality of first contact regions of the first anti-reflection film and a plurality of second electrodes each including a second metal seed layer and a second conductive layer on a plurality of second contact regions of the second anti-reflection film, the plurality of first contact regions being partially formed at the first anti-reflection layer and each having a first width.
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公开(公告)号:US20170170340A1
公开(公告)日:2017-06-15
申请号:US15443331
申请日:2017-02-27
Applicant: LG ELECTRONICS INC.
Inventor: Changseo PARK , Yoonsil JIN , Youngho CHOE
IPC: H01L31/0216 , H01L31/0224 , H01L31/068
CPC classification number: H01L31/02168 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A bifacial solar cell includes a substrate of an n-type; an emitter layer positioned on a first surface of the substrate; a plurality of first electrodes locally positioned on the emitter layer and electrically connected to the emitter layer; a first passivation layer positioned on the emitter layer; a silicon oxide layer formed at an interface between the first passivation layer and the emitter layer, the silicon oxide layer having a thickness of about 1 nm to 3 nm; a first anti-reflection layer positioned on the first passivation layer; a plurality of back surface field layers locally positioned on a second surface of the substrate; a plurality of second electrodes respectively positioned on the plurality of back surface field layers and electrically connected to the plurality of back surface field layers; and a second passivation layer positioned on the second surface of the substrate.
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公开(公告)号:US20140295614A1
公开(公告)日:2014-10-02
申请号:US14301183
申请日:2014-06-10
Applicant: LG ELECTRONICS INC.
Inventor: Sungeun LEE , Youngho CHOE
IPC: H01L31/18 , H01L31/0224
CPC classification number: H01L31/022441 , H01L31/02168 , H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/02366 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1864 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: A solar cell and a method of manufacturing a solar cell are disclosed. The solar cell includes forming a first doped region of a first conductive type and a second doped region of a second conductive type opposite the first conductive type on a semiconductor substrate of the first conductive type; forming a passivation layer on the semiconductor substrate to expose a portion of each of the first and second doped regions; and forming a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region, wherein the forming of the first and second electrodes includes forming a metal seed layer directly contacting the first doped region and a metal seed layer directly contacting the second doped region, and forming a conductive layer on the metal seed layer of each of the first and second electrodes.
Abstract translation: 公开了一种太阳能电池和太阳能电池的制造方法。 太阳能电池包括在第一导电类型的半导体衬底上形成第一导电类型的第一掺杂区域和与第一导电类型相反的第二导电类型的第二掺杂区域; 在所述半导体衬底上形成钝化层以暴露所述第一和第二掺杂区域中的每一个的一部分; 以及形成电连接到所述第一掺杂区的第一电极和与所述第二掺杂区电连接的第二电极,其中所述第一和第二电极的形成包括形成直接接触所述第一掺杂区域的金属种子层和金属种子层 直接接触所述第二掺杂区域,以及在所述第一和第二电极中的每一个的所述金属籽晶层上形成导电层。
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公开(公告)号:US20140116507A1
公开(公告)日:2014-05-01
申请号:US14146561
申请日:2014-01-02
Applicant: LG ELECTRONICS INC.
Inventor: Goohwan SHIM , Changseo PARK , Philwon YOON , Yoonsil JIN , Jinsung KIM , Youngho CHOE , Jaewon CHANG
IPC: H01L31/0216 , H01L31/068 , H01L31/0224
CPC classification number: H01L31/18 , H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/0684 , Y02E10/547
Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.
Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池可以包括衬底,位于衬底的第一表面处的发射极层,位于发射极层的表面上的第一抗反射层,并且可以包括多个第一接触线, 发射极层,电连接到通过多个第一接触线暴露的发射极层的第一电极,并且可以包括直接接触发射极层的镀层和位于基板的第二表面上的第二电极。
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公开(公告)号:US20190393366A1
公开(公告)日:2019-12-26
申请号:US16560384
申请日:2019-09-04
Applicant: LG ELECTRONICS INC.
Inventor: Changseo PARK , Yoonsil JIN , Youngho CHOE
IPC: H01L31/0216 , H01L31/068 , H01L31/18 , H01L31/0224
Abstract: A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.
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