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    SOLAR CELL
    2.
    发明申请
    SOLAR CELL 审中-公开

    公开(公告)号：US20190355860A1

    公开(公告)日：2019-11-21

    申请号：US16530701

    申请日：2019-08-02

    Applicant: LG ELECTRONICS INC.

    Inventor： Hyungseok KIM ,  Kwangsun JI ,  Youngjoo EO ,  Heonmin LEE ,  Choul KIM ,  Hojung SYN ,  Wonseok CHOI ,  Kihoon PARK ,  Junghoon CHOI ,  Hyunjin YANG

    IPC: H01L31/0747 ,  H01L31/0216

    Abstract: A solar cell can include a single crystalline semiconductor substrate; an emitter region positioned on an incident surface of the substrate, forming a p-n junction with the single crystalline semiconductor substrate; a first passivation layer positioned on a rear surface of the substrate and made of an oxide material; a back surface field layer positioned on the first passivation layer and forming a hetero junction with the single crystalline semiconductor substrate; a first electrode electrically connected to the emitter region; and a second electrode electrically connected to the single crystalline semiconductor substrate

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20150255645A1

    公开(公告)日：2015-09-10

    申请号：US14716619

    申请日：2015-05-19

    Applicant: LG Electronics Inc.

    Inventor： Sunyoung KIM ,  Choul KIM ,  Youngho CHOE ,  Sungeun LEE

    IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0352

    CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell can include a semiconductor layer containing first impurities and having a front surface and a back surface, the front surface being a light incident surface, a first portion on the back surface of the semiconductor layer, the first portion being more heavily doped with second impurities different from the first impurities than the semiconductor layer, and forming a p-n junction with the semiconductor layer, a second portion on the back surface of the semiconductor layer, the second portion being more heavily doped with the first impurities than the semiconductor layer, a third portion on the back surface of the semiconductor layer between the first portion and the second portion, a first electrode on the back surface of the semiconductor layer and connected to the first portion, a second electrode on the back surface of the semiconductor layer and connected to the second portion, and a passivation layer on the back surface of the semiconductor layer and contacting the first portion.

    Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池可以包括含有第一杂质并具有前表面和后表面的半导体层，前表面是光入射表面，半导体层的背表面上的第一部分，第一部分更加重掺杂 与半导体层不同于第一杂质的第二杂质，以及与半导体层形成pn结，在半导体层的背面上形成第二部分，第二部分比半导体层更加重掺杂第一杂质， 在第一部分和第二部分之间的半导体层的背表面上的第三部分，在半导体层的背表面上并连接到第一部分的第一电极，在半导体层的背面上的第二电极和 连接到第二部分，以及在半导体层的背表面上的钝化层，并与f接触 第一部分

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