公开(公告)号：US20180309026A1

公开(公告)日：2018-10-25

申请号：US15770158

申请日：2016-10-21

Applicant: LG INNOTEK CO., LTD.

Inventor： Jun Hee HONG ,  Deok Ki HWANG ,  Hoe Jun KIM ,  Woo Sik LIM

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/44

CPC classification number: H01L33/36 ,  H01L25/167 ,  H01L33/382 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62

Abstract: One embodiment relates to a light emitting device which is free from electrostatic discharge by using an electrostatic discharge suppressing pattern including a resin having particles conductive and dispersed therein, the light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode connected with the first conductive semiconductor layer; a second electrode connected with the second conductive semiconductor layer; and an electrostatic discharge suppressing pattern, which is overlapped with the first electrode and the second electrode, and of which first particles are dispersed in the resin so as to cover a gap between the first electrode and the second electrode.

公开(公告)号：US20180026163A1

公开(公告)日：2018-01-25

申请号：US15550955

申请日：2016-03-16

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Won SEO ,  Hoe Jun KIM ,  Bum Jin YIM ,  Jun Hee HONG

IPC: H01L33/44 ,  H01L33/62 ,  H01L33/40

CPC classification number: H01L33/44 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting device package, according to an embodiment, includes: a substrate; a light emitting structure that is disposed below the substrate and includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first bonding pad connected with the first conductive type semiconductor layer while being embedded in a through-hole exposed the first conductive type semiconductor layer by passing through the active layer and the second conductive type semiconductor layer; a second bonding pad that is disposed below the second conductive type semiconductor layer while being spaced apart from the first bonding pad and is connected with the second conductive type semiconductor layer; a first insulation layer disposed on the lateral portion of the light emitting structure in the through-hole and on the lower inner edge of the light emitting structure; and a second insulation layer disposed between the first insulation layer and the first bonding pad in the through-hole.

公开(公告)号：US20180122991A1

公开(公告)日：2018-05-03

申请号：US15561432

申请日：2016-03-16

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl LEE ,  Hoe Jun KIM ,  Sung Ho JUNG

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L33/507 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/16245

Abstract: A light-emitting device in an embodiment includes a substrate, a light-emitting structure which is disposed on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes which are respectively connected to the first and second conductive semiconductor layers, first and second bonding pads respectively connected to the first and second electrodes, and an insulating layer disposed between the first bonding pad and the second electrode, and between the second bonding pad and the first electrode. The first thickness of the first electrode may be ⅓ or less of the second thickness of the insulating layer disposed between the second bonding pad and the first electrode.