公开(公告)号：US11158668B2

公开(公告)日：2021-10-26

申请号：US16648860

申请日：2018-09-19

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Yong Tae Moon ,  Ji Hyung Moon ,  Sun Woo Park ,  Hyeon Min Cho

IPC: H01L27/15 ,  H01L33/50

Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.

公开(公告)号：US11239394B2

公开(公告)日：2022-02-01

申请号：US16085930

申请日：2017-03-17

Applicant: LG INNOTEK CO., LTD.

Inventor： Sun Woo Park ,  Myung Ho Han ,  Hyeon Min Cho ,  June O Song ,  Chung Song Kim ,  Ji Hyung Moon ,  Sang Youl Lee

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40 ,  H01L33/52 ,  H01L33/62

Abstract: Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light in a green wavelength band, and a height of the second active layer differs from a height of the first active layer.

公开(公告)号：US10790330B2

公开(公告)日：2020-09-29

申请号：US16463730

申请日：2017-11-24

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  Hyeon Min Cho

IPC: H01L27/15 ,  H01L25/065 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.

公开(公告)号：US10755981B2

公开(公告)日：2020-08-25

申请号：US16475874

申请日：2018-01-05

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  Hyeon Min Cho

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/52 ,  H01L27/15 ,  H05B33/10

Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.