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    Light emitting device and lighting system
    1.
    发明授权
    Light emitting device and lighting system 有权

    公开(公告)号：US09634192B2

    公开(公告)日：2017-04-25

    申请号：US14661115

    申请日：2015-03-18

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Ji Hyung Moon ,  Myeong Soo Kim ,  Chung Song Kim

    IPC: H01L33/38 ,  H01L33/44 ,  H01L33/40

    CPC classification number: H01L33/387 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44

    Abstract: Disclosed are a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. The light emitting device may include a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, an ohmic layer on the second conductive semiconductor layer, an insulating layer on the ohmic layer, a first branch electrode electrically connected with the first conductive semiconductor layer, a first pad electrode connected with the first branch electrode for electrical connection with the first conductive semiconductor layer, a second pad electrode in contact with the ohmic layer through the insulating layer, a second branch electrode connected with the second pad electrode on the insulating layer, and a second through electrode passing through the insulating layer to connect the second branch electrode with the ohmic layer.

    Light emitting device
    2.
    发明授权
    Light emitting device 有权

    公开(公告)号：US09673354B2

    公开(公告)日：2017-06-06

    申请号：US14725469

    申请日：2015-05-29

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Ji Hyung Moon ,  Sang Youl Lee ,  Bum Doo Park ,  Chung Song Kim ,  Sang Rock Park ,  Byung Hak Jeong ,  Tae Yong Lee

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

    CPC classification number: H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46

    Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.

    Display device manufacturing method
    4.
    发明授权
    Display device manufacturing method 有权

    公开(公告)号：US10755981B2

    公开(公告)日：2020-08-25

    申请号：US16475874

    申请日：2018-01-05

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  Hyeon Min Cho

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/52 ,  H01L27/15 ,  H05B33/10

    Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

    Semiconductor module and display device including same
    5.
    发明授权
    Semiconductor module and display device including same 有权

    公开(公告)号：US11158668B2

    公开(公告)日：2021-10-26

    申请号：US16648860

    申请日：2018-09-19

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl Lee ,  Chung Song Kim ,  Yong Tae Moon ,  Ji Hyung Moon ,  Sun Woo Park ,  Hyeon Min Cho

    IPC: H01L27/15 ,  H01L33/50

    Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10600936B2

    公开(公告)日：2020-03-24

    申请号：US16090051

    申请日：2017-03-28

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  June O Song

    IPC: H01L33/38 ,  H01L25/16 ,  H01L29/772 ,  H01L29/423 ,  G08C23/04 ,  H01L29/66 ,  G09G3/22 ,  G09G3/3258 ,  G09G3/3266 ,  H01L27/12 ,  H01L29/417 ,  H01L27/15

    Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

    Semiconductor device and display device including the same
    8.
    发明授权
    Semiconductor device and display device including the same 有权

    公开(公告)号：US11239394B2

    公开(公告)日：2022-02-01

    申请号：US16085930

    申请日：2017-03-17

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sun Woo Park ,  Myung Ho Han ,  Hyeon Min Cho ,  June O Song ,  Chung Song Kim ,  Ji Hyung Moon ,  Sang Youl Lee

    IPC: H01L33/50 ,  H01L25/075 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40 ,  H01L33/52 ,  H01L33/62

    Abstract: Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light in a green wavelength band, and a height of the second active layer differs from a height of the first active layer.

    Semiconductor device, display panel, and method for manufacturing display panel
    9.
    发明授权
    Semiconductor device, display panel, and method for manufacturing display panel 有权

    公开(公告)号：US10483247B2

    公开(公告)日：2019-11-19

    申请号：US16083134

    申请日：2017-03-07

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  June O Song

    IPC: H01L25/13 ,  H01L33/54 ,  H01L33/20 ,  H01L33/00 ,  H01L33/62

    Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

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