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    Semiconductor device and semiconductor device package including same
    1.
    发明授权
    Semiconductor device and semiconductor device package including same 有权

    公开(公告)号：US11011675B2

    公开(公告)日：2021-05-18

    申请号：US16500216

    申请日：2018-04-03

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Yong Nam Park ,  June O Song ,  Myeong Soo Kim ,  Seong Jun Park

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/14 ,  H01L33/62 ,  H01L33/48 ,  H01L33/38

    Abstract: Disclosed in an embodiment are a semiconductor device and a semiconductor device package including the same, the semiconductor device comprising: a semiconductor structure including a first light emitting unit and a second light emitting unit; a first electrode for electrically connecting a first conductive type semiconductor layer of the first light emitting unit with a first conductive type semiconductor layer of the second light emitting unit; and a second electrode for electrically connecting a second conductive type semiconductor layer of the first light emitting unit with a second conductive type semiconductor layer of the second light emitting unit, wherein: the first electrode includes a first pad arranged on the first light emitting unit, a first branch electrode arranged on the first light emitting unit, and a first extension electrode arranged on the second light emitting unit; the second electrode includes a second pad arranged on the second light emitting unit, a second branch electrode arranged on the second light emitting unit, and a second extension electrode arranged on the first light emitting unit; the semiconductor structure includes a first spacing section which extends in a first direction and comparts the first light emitting unit and the second light emitting unit; and the first pad and the second pad are not overlapped in the first direction and a second direction which is perpendicular to the first direction.

    Light emitting device package and lighting source device
    2.
    发明授权
    Light emitting device package and lighting source device 有权

    公开(公告)号：US10937934B2

    公开(公告)日：2021-03-02

    申请号：US16646660

    申请日：2018-09-12

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Chang Man Lim ,  June O Song ,  Sung Min Kong ,  Ki Seok Kim

    IPC: H01L33/54 ,  H01L33/24 ,  H01L33/62 ,  H01L33/38 ,  H01L33/60 ,  H01L33/48 ,  F21K9/00

    Abstract: The light emitting device package disclosed in the embodiment includes first and second frames spaced apart from each other; a body disposed between the first and second frames; a light emitting device disposed on the first and second frames; a first resin disposed between the body and the light emitting device, wherein each of the first and second frames includes a through hole, the through hole overlaps the light emitting device in a vertical direction, and the body includes a recess recessed toward a lower surface of the body between the first and second frames, and the recess overlaps the light emitting device in the vertical direction, the first resin is disposed in the recess, and a length of the recess is smaller than a width of the light emitting device.

    LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
    6.
    发明申请
    LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 有权
    发光装置，电极结构，发光装置包装和照明系统

    公开(公告)号：US20170025579A1

    公开(公告)日：2017-01-26

    申请号：US15284838

    申请日：2016-10-04

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Kwang Ki CHOI ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song

    IPC: H01L33/38 ,  H01L33/58 ,  H01L33/44 ,  H01L33/62 ,  H01L33/40

    CPC classification number: H01L33/38 ,  G02B6/0073 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer comprising a first semiconductor layer, a second semiconductor layer, and an active layer. An electrode disposed on a top surface of the first semiconductor layer, a first layer includes a transmittive oxide material between the top surface of the first semiconductor layer and the electrode, and a second layer disposed is disposed between the first layer and the electrode, wherein the first layer is formed in a different material from the second layer, wherein the electrode comprises a lower portion connected to the first semiconductor layer and an upper portion on a top surface of the second layer.

    Abstract translation: 提供发光器件，电极结构，发光器件封装和照明系统。 发光器件包括包括第一半导体层，第二半导体层和有源层的发光结构层。 设置在第一半导体层的顶表面上的电极，第一层包括在第一半导体层的顶表面和电极之间的透射氧化物材料，并且设置在第一层和电极之间的第二层，其中 第一层以与第二层不同的材料形成，其中电极包括连接到第一半导体层的下部分和第二层顶表面上的上部。

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM
    7.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM 审中-公开
    发光装置，包含其的发光装置包装和照明系统

    公开(公告)号：US20160197238A1

    公开(公告)日：2016-07-07

    申请号：US15069758

    申请日：2016-03-14

    Applicant: LG Innotek Co., Ltd.

    Inventor： Hwan Hee Jeong ,  Kwang Ki Choi ,  June O Song ,  Sang Youl Lee

    IPC: H01L33/38 ,  H01L33/40 ,  H01L33/22

    CPC classification number: H01L33/38 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light emitting device including a substrate, a first conductive layer on the substrate, a second conductive layer on the first conductive layer, a metal layer on the second conductive layer, a light emitting structure on the metal layer and the second conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, and a passivation layer disposed on a side surface of the light emitting structure. Further, the metal layer directly contacts with the light emitting structure, the second conductive layer directly contacts with the light emitting structure, a portion of the passivation layer is disposed on a top surface of the light emitting structure, a width of the second conductive layer greater than a width of the metal layer, and a distance between a top surface of the substrate and a bottom surface of the metal layer at a center portion of the metal layer is different from a distance between the top surface of the substrate and the bottom surface of the metal layer at a side portion of the metal layer.

    Abstract translation: 一种发光器件，包括衬底，衬底上的第一导电层，第一导电层上的第二导电层，第二导电层上的金属层，金属层上的发光结构和第二导电层， 包括含有AlGaN的第一半导体层，有源层和包含AlGaN的第二半导体层，发光结构上的第一电极和设置在发光结构的侧表面上的钝化层的发光结构。 此外，金属层与发光结构直接接触，第二导电层直接与发光结构接触，钝化层的一部分设置在发光结构的顶表面上，第二导电层的宽度 大于金属层的宽度，并且在金属层的中心部分的衬底的顶表面和金属层的底表面之间的距离与衬底的顶表面和底部之间的距离不同 在金属层的侧面处的金属层的表面。

    Light emitting device, light emitting device package comprising the same and lighting system
    8.
    发明授权
    Light emitting device, light emitting device package comprising the same and lighting system 有权
    发光器件，包括该发光器件的发光器件封装和照明系统

    公开(公告)号：US09356195B2

    公开(公告)日：2016-05-31

    申请号：US14500311

    申请日：2014-09-29

    Applicant: LG Innotek Co., Ltd.

    Inventor： Hwan Hee Jeong ,  Kwang Ki Choi ,  June O Song ,  Sang Youl Lee

    IPC: H01L33/00 ,  H01L33/40 ,  H01L33/36 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/38

    CPC classification number: H01L33/38 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light emitting device including a support substrate, an adhesive layer on the support substrate, a conductive layer on the adhesive layer, a light emitting structure on the conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, a metal layer disposed under the conductive layer and at an adjacent region of the conductive layer, and a passivation layer disposed on a side surface of the light emitting structure, wherein the first electrode is vertically non-overlapped with the conductive layer, wherein the conductive layer includes a first layer and a second layer on the first layer, wherein the second layer directly contacts with the light emitting structure, wherein the metal layer directly contacts with the light emitting structure, wherein the metal layer is expanded to an outer area of the light emitting structure, and wherein the passivation layer is disposed on the metal layer at the outer surface of the light emitting structure.

    Abstract translation: 一种发光器件，包括支撑衬底，支撑衬底上的粘合剂层，粘合剂层上的导电层，导电层上的发光结构，发光结构包括含有AlGaN的第一半导体层，有源层， 以及包含AlGaN的第二半导体层，所述发光结构上的第一电极，设置在所述导电层下方和所述导电层的相邻区域的金属层，以及设置在所述发光结构的侧表面上的钝化层， 其中所述第一电极与所述导电层垂直不重叠，其中所述导电层包括在所述第一层上的第一层和第二层，其中所述第二层直接与所述发光结构接触，其中所述金属层直接与 所述发光结构，其中所述金属层扩展到所述发光结构的外部区域， d，其中钝化层设置在发光结构的外表面处的金属层上。

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