公开(公告)号：US11158668B2

公开(公告)日：2021-10-26

申请号：US16648860

申请日：2018-09-19

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Yong Tae Moon ,  Ji Hyung Moon ,  Sun Woo Park ,  Hyeon Min Cho

IPC: H01L27/15 ,  H01L33/50

Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.

公开(公告)号：US10600936B2

公开(公告)日：2020-03-24

申请号：US16090051

申请日：2017-03-28

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  June O Song

IPC: H01L33/38 ,  H01L25/16 ,  H01L29/772 ,  H01L29/423 ,  G08C23/04 ,  H01L29/66 ,  G09G3/22 ,  G09G3/3258 ,  G09G3/3266 ,  H01L27/12 ,  H01L29/417 ,  H01L27/15

Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

公开(公告)号：US10541254B2

公开(公告)日：2020-01-21

申请号：US16064885

申请日：2016-10-14

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  June O Song

IPC: G02F1/1362 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L29/778 ,  H01L29/10 ,  G02F1/1368 ,  H01L21/762 ,  H01L27/32 ,  H01L29/205 ,  G02F1/1343 ,  H01L29/20

Abstract: A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.

公开(公告)号：US10217905B2

公开(公告)日：2019-02-26

申请号：US15576563

申请日：2016-05-25

Applicant: LG INNOTEK CO., LTD.

Inventor： Sun Woo Park ,  Dong Hyun Sung ,  Dae Hee Lee ,  Byoung Woo Lee ,  Kwang Ki Choi ,  Jae Cheon Han

IPC: H01L33/38 ,  H01L33/36 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/00

Abstract: Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.

公开(公告)号：US11239394B2

公开(公告)日：2022-02-01

申请号：US16085930

申请日：2017-03-17

Applicant: LG INNOTEK CO., LTD.

Inventor： Sun Woo Park ,  Myung Ho Han ,  Hyeon Min Cho ,  June O Song ,  Chung Song Kim ,  Ji Hyung Moon ,  Sang Youl Lee

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40 ,  H01L33/52 ,  H01L33/62

Abstract: Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light in a green wavelength band, and a height of the second active layer differs from a height of the first active layer.

公开(公告)号：US10950756B2

公开(公告)日：2021-03-16

申请号：US16466993

申请日：2017-12-06

Applicant: LG INNOTEK CO., LTD.

Inventor： Sung Min Hwang ,  Sun Woo Park ,  Chang Hyeong Lee

IPC: H01L33/40 ,  F21K9/00 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device. A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer. The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer. The insulating reflective layer may be disposed on the first region, and an end portion of the insulating reflective layer may be disposed apart from an end portion of the first region.

公开(公告)号：US10483247B2

公开(公告)日：2019-11-19

申请号：US16083134

申请日：2017-03-07

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  June O Song

IPC: H01L25/13 ,  H01L33/54 ,  H01L33/20 ,  H01L33/00 ,  H01L33/62

Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

公开(公告)号：US10396098B2

公开(公告)日：2019-08-27

申请号：US16069130

申请日：2016-11-09

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  June O Song

IPC: H01L27/12 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1362 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778 ,  H01L27/32

Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

公开(公告)号：US10790330B2

公开(公告)日：2020-09-29

申请号：US16463730

申请日：2017-11-24

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  Hyeon Min Cho

IPC: H01L27/15 ,  H01L25/065 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.

公开(公告)号：US10755981B2

公开(公告)日：2020-08-25

申请号：US16475874

申请日：2018-01-05

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Chung Song Kim ,  Ji Hyung Moon ,  Sun Woo Park ,  Hyeon Min Cho

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/52 ,  H01L27/15 ,  H05B33/10

Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.