Abstract:
The present invention relates to a gas barrier film laminate comprising at least two gas barrier films, the gas barrier film laminate having a configuration in which two adjacent gas barrier films are stacked through a pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer having a shear load reduction ratio α (%) given by an expression (I) in claim 1, of 70% or less; and an adhesive film that is used to produce a gas barrier film laminate that includes at least two gas barrier films, and has a configuration in which two adjacent gas barrier films are stacked through a pressure-sensitive adhesive layer, the adhesive film comprising at least a gas barrier film and a pressure-sensitive adhesive layer that are stacked adjacent to each other, the pressure-sensitive adhesive layer having a shear load reduction ratio α (%) given by an expression (I) in claim 11, of 70% or less. Provided is a gas barrier film laminate that exhibits an excellent water vapor barrier capability, and rarely shows a deterioration in external appearance (e.g., air bubbles) even when subjected to a high temperature and a high humidity for a long time, the adhesive film that is useful for producing the gas barrier film laminate, and an electronic member that includes the gas barrier film laminate.
Abstract:
An ion implantation device equipped with a vacuum chamber (11), an electrode roll (13) on a portion of the outer circumferential part of which a film (2) is wound, a voltage application means (21) that applies a voltage to the electrode roll, and a gas introduction means (31) that introduces a gas into the vacuum chamber, wherein a voltage is applied to the electrode roll by means of the voltage application means and a gas is introduced by means of the gas introduction means, and an ion implantation process is performed on the surface of the film. In addition, electrode members (42) are provided opposing the surface of the electrode roll on which the film is wound.
Abstract:
An ion implantation device equipped with a vacuum chamber (11), an electrode roll (13) on a portion of the outer circumferential part of which a film (2) is wound, a voltage application means (21) that applies a voltage to the electrode roll, and a gas introduction means (31) that introduces a gas into the vacuum chamber, wherein a voltage is applied to the electrode roll by means of the voltage application means and a gas is introduced by means of the gas introduction means, and an ion implantation process is performed on the surface of the film. In addition, electrode members (42) are provided opposing the surface of the electrode roll on which the film is wound.
Abstract:
The disclosed ion implantation apparatus has a vacuum chamber 11, a roller electrode 13 having a portion of an outer circumferential part on which a film 3 is wound, voltage application unit 23 for applying a voltage to the roller electrode, and a gas introduction unit having a gas supply outlet for supplying an ion implantation gas into the vacuum chamber, wherein the gas introduction unit and a gas discharge outlet are disposed so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween.
Abstract:
The disclosed ion implantation apparatus has a vacuum chamber 11, a roller electrode 13 having a portion of an outer circumferential part on which a film 3 is wound, voltage application unit 23 for applying a voltage to the roller electrode, and. a gas introduction unit having a. gas supply outlet for supplying an ion implantation gas into the vacuum chamber, wherein the gas introduction unit and a gas discharge outlet are disposed, so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween.