公开(公告)号：US6057216A

公开(公告)日：2000-05-02

申请号：US987076

申请日：1997-12-09

申请人： Laertis Economikos ,  Cheruvu S. Murthy ,  Hua Shen

发明人： Laertis Economikos ,  Cheruvu S. Murthy ,  Hua Shen

IPC分类号： H01L21/225 ,  H01L21/334 ,  H01L21/822 ,  H01L23/00 ,  H01L27/04 ,  H01L29/94 ,  H01L21/38

CPC分类号： H01L29/66181 ,  H01L21/2255 ,  H01L29/945 ,  Y10S438/92

摘要： Doped semiconductor with high dopant concentrations in small semiconductor regions without excess spreading of the doped region are formed by:(a) applying a dopant-containing oxide glass layer on the semiconductor surface,(b) capping the dopant-containing oxide glass layer with a conformal silicon oxide layer,(c) heating the substrate from step (b) in a non-oxidizing atmosphere whereby at least a portion of the dopant in the glass diffuses into the substrate at the semiconductor surface, and(d) heating the glass-coated substrate from step (c) in an oxidizing atmosphere whereby at least a portion of the dopant in the glass near the semiconductor surface is forced into the substrate at the semiconductor surface by diffusion of oxygen through the glass.The method is especially useful for making buried plates in semiconductor substrates which may be used in trench capacitor structures. The preferred semiconductor substrate material is monocrystalline silicon. The preferred dopant is arsenic.

摘要翻译： 通过：（a）在半导体表面上施加含掺杂剂的氧化物玻璃层，（b）用含有掺杂剂的氧化物玻璃层将掺杂剂氧化物玻璃层盖上 （c）在非氧化气氛中加热来自步骤（b）的衬底，由此玻璃中的至少一部分掺杂剂在半导体表面扩散到衬底中，（d）加热玻璃 - 在步骤（c）中，在半导体表面附近的玻璃中的掺杂剂的至少一部分通过氧气扩散通过玻璃而被迫进入到半导体表面的衬底中。 该方法对于将半导体衬底中的掩模板制成可用于沟槽电容器结构中是特别有用的。 优选的半导体衬底材料是单晶硅。 优选的掺杂剂是砷。

公开(公告)号：US07776725B2

公开(公告)日：2010-08-17

申请号：US11162478

申请日：2005-09-12

申请人： Huilong Zhu ,  Philip Oldiges ,  Cheruvu S. Murthy

发明人： Huilong Zhu ,  Philip Oldiges ,  Cheruvu S. Murthy

IPC分类号： H01L21/04

CPC分类号： H01L21/26586 ,  H01L21/2652 ,  H01L21/28247 ,  H01L29/1045 ,  H01L29/66772 ,  H01L29/78609 ,  H01L29/78612 ,  H01L29/78621

摘要： An apparatus and method for controlling the net doping in the active region of a semiconductor device in accordance with a gate length. The method includes doping a short channel device and a long channel device with a first dopant, and doping the short channel device and the long channel device with a second dopant at a same implantation energy, dose, and angle for both the short channel device and the long channel device. The second dopant neutralizes the first dopant in portion to a gate length of the short channel device and the second channel device.

摘要翻译： 一种用于根据栅极长度控制半导体器件的有源区域中的净掺杂的装置和方法。 该方法包括用第一掺杂剂掺杂短沟道器件和长沟道器件，并以相同的注入能量，剂量和角度对短沟道器件和长沟道器件掺杂第二掺杂剂，以便短沟道器件和 长通道设备。 第二掺杂剂部分地将第一掺杂剂中和到短沟道器件和第二通道器件的栅极长度。