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1.
公开(公告)号:US20240363311A1
公开(公告)日:2024-10-31
申请号:US18767915
申请日:2024-07-09
发明人: Weiyi LUO , Youn Gi HONG , WeiWu ZHONG , Himanshu CHOKSHI
IPC分类号: H01J37/32 , C23C16/455 , C23C16/50 , C23C16/52
CPC分类号: H01J37/32183 , C23C16/45536 , C23C16/45544 , C23C16/50 , C23C16/52 , H01J37/3299 , H01J2237/332 , H01J2237/334
摘要: A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.
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公开(公告)号:US20210313152A1
公开(公告)日:2021-10-07
申请号:US17267525
申请日:2019-08-08
发明人: Wei Yi LUO , Youn Gi HONG , WeiWu ZHONG , Himanshu CHOKSHI
IPC分类号: H01J37/32 , C23C16/50 , C23C16/52 , C23C16/455
摘要: A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.
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