公开(公告)号：US20240363311A1

公开(公告)日：2024-10-31

申请号：US18767915

申请日：2024-07-09

申请人： Lam Research Corporation

发明人： Weiyi LUO ,  Youn Gi HONG ,  WeiWu ZHONG ,  Himanshu CHOKSHI

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： H01J37/32183 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

摘要： A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.

公开(公告)号：US20210313152A1

公开(公告)日：2021-10-07

申请号：US17267525

申请日：2019-08-08

申请人： LAM RESEARCH CORPORATION

发明人： Wei Yi LUO ,  Youn Gi HONG ,  WeiWu ZHONG ,  Himanshu CHOKSHI

IPC分类号： H01J37/32 ,  C23C16/50 ,  C23C16/52 ,  C23C16/455

摘要： A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.

公开(公告)号：US20240266147A1

公开(公告)日：2024-08-08

申请号：US18640505

申请日：2024-04-19

申请人： LAM RESEARCH CORPORATION

发明人： Andrew Stratton BRAVO ,  Chih-Hsun HSU ,  Serge KOSCHE ,  Stephen WHITTEN ,  Shih-Chung KON ,  Mark KAWAGUCHI ,  Himanshu CHOKSHI ,  Dan ZHANG ,  Gnanamani AMBUROSE

IPC分类号： H01J37/32

CPC分类号： H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

摘要： A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.

公开(公告)号：US20220076924A1

公开(公告)日：2022-03-10

申请号：US17424381

申请日：2020-01-21

申请人： LAM RESEARCH CORPORATION

发明人： Andrew Stratton BRAVO ,  Chih-Hsun HSU ,  Serge KOSCHE ,  Stephen WHITTEN ,  Shih-Chung KON ,  Mark KAWAGUCHI ,  Himanshu CHOKSHI ,  Dan ZHANG ,  Gnanamani AMBUROSE

IPC分类号： H01J37/32

摘要： A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

公开(公告)号：US20210265144A1

公开(公告)日：2021-08-26

申请号：US17315998

申请日：2021-05-10

申请人： Lam Research Corporation

发明人： Norman A. MERTKE ,  Himanshu CHOKSHI

IPC分类号： H01J37/32

摘要： A system for controlling a temperature of a substrate during treatment in a substrate processing system comprises a substrate support including first and second components, first and second heaters, and first and second heat sinks. The first component includes an upper surface at least partially defining a center zone. The second component is arranged radially outside of and below the first component. The second component includes an upper surface at least partially defining a radially-outer zone. The first and second components are spaced apart and define a gap between them. The first and second heaters are configured to heat the first and second components, respectively. The first heat sink has one end in thermal communication with the first component. The second heat sink has one end in thermal communication with the second component.