公开(公告)号：US20100216373A1

公开(公告)日：2010-08-26

申请号：US12392676

申请日：2009-02-25

申请人： Leonard Borucki ,  Yasa Sampurno ,  Sian Theng ,  Ara Philipossian

发明人： Leonard Borucki ,  Yasa Sampurno ,  Sian Theng ,  Ara Philipossian

IPC分类号： B24B49/12 ,  B24B57/02 ,  B24B49/14

CPC分类号： B24B57/02 ,  B24B37/015 ,  B24B49/12

摘要： A method for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of leading edge of the polishing head with a gap of between 0 and 3 inches, the bottom surface facing the pad, which rests on the pad with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced at the junction of the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad, wherein multiple inlets for the introduction of fluids to different points in the channel or directly to the bottom surface of the injector are utilized and some or all of which inlets are fitted with means for controlling the flow of fluid and adjustment is made to the said flow control means during or after polishing to adjust slurry delivery to the wafer surface to improve uniformity of removal rate at the wafer surface.

摘要翻译： 一种用于在半导体晶片的化学机械抛光中在晶片和衬垫之间注入浆料的方法，其包括固体新月形喷射器，其凹形后缘与抛光头的前缘的尺寸和形状相配合，间隙为0 并且3英寸，底表面面向垫，其以轻负载放置在垫上，并且通过该CMP浆料或其组分通过喷射器的顶部中的一个或多个开口引入CMP浆料或其组分，并且穿过通道或容器 设备到底部的距离，其中它们或它们离开喷射器底部的多个开口，被扩散成薄膜，并且在沿着抛光垫的前缘的抛光垫的表面和晶片的接合处被引入 晶片的数量足够小，使得所有或大部分浆料被引入晶片和抛光垫之间，其中多个入口用于将流体引入到 通道或直接到喷射器的底表面，并且其中的一些或所有入口装配有用于控制流体流动的装置，并且在抛光期间或之后对所述流量控制装置进行调整以调节浆料向晶片的输送 表面以提高晶片表面的去除速率的均匀性。

公开(公告)号：US08197306B2

公开(公告)日：2012-06-12

申请号：US12262579

申请日：2008-10-31

申请人： Leonard Borucki ,  Ara Philipossian ,  Yasa Sampurno ,  Sian Theng

发明人： Leonard Borucki ,  Ara Philipossian ,  Yasa Sampurno ,  Sian Theng

IPC分类号： B24B57/00 ,  B24B1/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： The present invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of the leading edge of the polishing head with a gap of up to 1 inch, the bottom surface of which faces the pad and rests on it with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced between the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities such that all or most of the slurry is introduced between the wafer and the polishing pad and a method of use therefor.

摘要翻译： 本发明包括一种用于在半导体晶片的化学机械抛光中在晶片和衬垫之间注入浆料的设备，其包括固体月牙形喷射器，其凹后缘与抛光头的前缘的尺寸和形状相配合， 高达1英寸的间隙，其底表面面向垫并以轻负载放置在其上，并且通过其中CMP浆料或其组分通过喷射器顶部中的一个或多个开口引入并穿过一个 通道或储存器，其中它或它们离开喷射器底部的多个开口的底部的长度被扩散成薄膜，并且沿着前述边缘的引导边缘被引入到抛光垫的表面和晶片之间 晶片的量使得所有或大部分浆料被引入晶片和抛光垫之间，并且其使用方法。

公开(公告)号：US20100112911A1

公开(公告)日：2010-05-06

申请号：US12262579

申请日：2008-10-31

申请人： Leonard Borucki ,  Ara Philipossian ,  Yasa Sampurno ,  Sian Theng

发明人： Leonard Borucki ,  Ara Philipossian ,  Yasa Sampurno ,  Sian Theng

IPC分类号： B24B57/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： The present invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of the leading edge of the polishing head with a gap of up to 1 inch, the bottom surface of which faces the pad and rests on it with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced between the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities such that all or most of the slurry is introduced between the wafer and the polishing pad and a method of use therefor.

摘要翻译： 本发明包括一种用于在半导体晶片的化学机械抛光中在晶片和衬垫之间注入浆料的设备，其包括固体月牙形喷射器，其凹后缘与抛光头的前缘的尺寸和形状相配合， 高达1英寸的间隙，其底表面面向垫并以轻负载放置在其上，并且通过其中CMP浆料或其组分通过喷射器顶部中的一个或多个开口引入并穿过一个 通道或储存器，其中它或它们离开喷射器底部的多个开口的底部的长度被扩散成薄膜，并且沿着前述边缘的引导边缘被引入到抛光垫的表面和晶片之间 晶片的量使得所有或大部分浆料被引入晶片和抛光垫之间，并且其使用方法。

公开(公告)号：US20110076924A1

公开(公告)日：2011-03-31

申请号：US12568267

申请日：2009-09-28

申请人： Ara Philipossian ,  Yasa Sampurno ,  Yun Zhuang ,  Sian Theng ,  Fransisca Sudargho

发明人： Ara Philipossian ,  Yasa Sampurno ,  Yun Zhuang ,  Sian Theng ,  Fransisca Sudargho

IPC分类号： B24B49/00

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/20 ,  B24B49/16

摘要： The present invention is a method for obtaining data easily, accurately and effectively that may be used in determination of Sommerfeld Numbers and COF for CMP polishing. Using the Sommerfeld Numbers and COF values thus obtained the lubrication mechanism of CMP polishing with particular materials and under particular conditions can easily and reliably be studied. The method of the present invention is accomplished by use of CMP polishing tools capable of simultaneously measuring shear force and normal force, and rendering a value for the COF while simultaneously enabling the operator to change pressure on and relative velocity of the CMP wafer and CMP polishing pad in real time. Using the said CMP tool, the pressure and relative velocity may be varied separately or together for the desired length of time according to the needs of the operator so that within one CMP process multiple measurements may be taken under the same process conditions.

摘要翻译： 本发明是容易，准确，有效地获得数据的方法，可用于确定CMP抛光的Sommerfeld编号和COF。 使用由此获得的Sommerfeld数和COF值可以容易且可靠地研究特定材料和特定条件下的CMP抛光的润滑机理。 本发明的方法通过使用能够同时测量剪切力和法向力的CMP研磨工具来实现，并且为COF提供一个值，同时使操作者能够改变CMP晶片和CMP抛光的压力和相对速度 垫实时。 使用所述CMP工具，压力和相对速度可以根据操作者的需要而单独地或一起改变所需时间长度，使得在一个CMP过程中可以在相同的工艺条件下进行多次测量。

公开(公告)号：US20100186479A1

公开(公告)日：2010-07-29

申请号：US12359772

申请日：2009-01-26

申请人： Leonard Borucki ,  Yun Zhuang ,  Yasa Sampurno ,  Ara Philipossian

发明人： Leonard Borucki ,  Yun Zhuang ,  Yasa Sampurno ,  Ara Philipossian

IPC分类号： G01N3/56

CPC分类号： G01N3/56

摘要： The present invention is a method for determining the location of and distinguishing aggressive diamonds from active diamonds on a diamond conditioner disc, comprising: (a) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (b) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (c) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, and (d) selecting the diamonds, the marks for which are the most pronounced and which comprise 50% or more of the total furrow area observed for all of the active diamonds in descending order of furrow are plus any diamonds in excess of the number needed to achieve said 50% or more whose individual furrow area is 2% or more, which diamonds are determined to be aggressive diamonds, or impressing the diamond conditioner disc under a load onto a hard surface and the impression of the most aggressive diamonds in the hard surface being confirmed by microscopic examination to in turn confirm the position and aggressiveness of the aggressive diamonds observed or (e) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (f) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (g) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, (h) the hard surface further comprises a layer of contrasting material such that when the diamond conditioner disc moves across the hard surface, the said diamond conditioner disc crosses the limits of the layer entirely from one end to the other and scratches the layer of contrasting material on the hard surface thereby leaving a visible mark, (i) the said layer is between 8 and 15 microns thick and (j) selecting the diamonds which cut entirely through the said layer allowing backlighting to be easily viewed.

公开(公告)号：US20100159804A1

公开(公告)日：2010-06-24

申请号：US12341604

申请日：2008-12-22

申请人： Yasa Sampurno ,  Ara Philipossian ,  Akinobu Teramoto ,  Takenao Nemoto

发明人： Yasa Sampurno ,  Ara Philipossian ,  Akinobu Teramoto ,  Takenao Nemoto

IPC分类号： B24B49/00 ,  B24B49/16

CPC分类号： B24B37/042 ,  B24B49/16

摘要： A method of determining pattern evolution of a semiconductor wafer during chemical mechanical polishing prior to polishing end point by determining the periodic change in the variance and FT or FFT frequency spectra of shear force and change in variance and FT or FFT frequency spectra of COF, shear force and/or down force between the semiconductor wafer and the polishing pad. By comparing features of the data and spectra thus obtained, analysis leading to a deeper understanding of the changes that occur as CMP processes occur as well as diagnostic analysis of specific CMP processes and specific wafers can be accomplished

摘要翻译： 在抛光终点之前的化学机械抛光期间通过确定方差的周期性变化和剪切力的FT或FFT频谱以及方差变化以及COF，剪切的FT或FFT频谱来确定半导体晶片的图案演化的方法 在半导体晶片和抛光垫之间的力和/或向下的力。 通过比较由此获得的数据和光谱的特征，可以实现对CMP过程发生的变化的深入了解以及特定CMP工艺和特定晶片的诊断分析的分析

公开(公告)号：US20100240283A1

公开(公告)日：2010-09-23

申请号：US12567092

申请日：2009-09-25

申请人： Takenao Nemoto ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Xun Gu ,  Ara Philipossian ,  Yasa Sampurno

发明人： Takenao Nemoto ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Xun Gu ,  Ara Philipossian ,  Yasa Sampurno

IPC分类号： B24B1/04

CPC分类号： H01L21/3212 ,  B24B37/042

摘要： [Problem] To improve polishing efficiency while lowering shear force added to semiconductor wafers while increasing polishing speed, without damaging the wafer's processing surface or the membrane under it.[Solution Method] Pressing the revolving head or carrier 34 that holds fixed the semiconductor wafer 10 to the polishing pad or polishing cloth 30 attached to rotating polishing table 32 in this CMP device and while rotating carrier 34 and polishing table 32 respectively, and supplying liquid slurry to polishing pad 30 from nozzle 36, planarization by chemical processes and mechanical processes is carried out by removing membranes of the lower face of semiconductor wafer 10 (the processing surface). The chemical mechanical polishing process of the present invention in regard to the size of the relationship between the rotation rate of semiconductor wafer 10 fW and the number of rotations of polishing pad 30 fP has 3 fp

摘要翻译： [问题]为了提高抛光效率，同时降低加入到半导体晶片中的剪切力同时增加抛光速度，而不损坏晶片的处理表面或其下面的膜。 [解决方案方法]将固定有半导体晶片10的旋转头或载体34按压到分别安装在该CMP装置中的旋转研磨台32上的研磨垫或抛光布30，同时分别旋转载体34和研磨台32， 从喷嘴36到研磨垫30的浆料，通过化学处理和机械加工的平坦化，通过去除半导体晶片10的下表面（处理用面）的膜来进行。 本发明的化学机械研磨方法关于半导体晶片10f的旋转速度与抛光垫30fP的旋转速度之间的关系的大小作为其下限为3fp

公开(公告)号：US20100203811A1

公开(公告)日：2010-08-12

申请号：US12367881

申请日：2009-02-09

申请人： Ara Philipossian ,  Yasa Sampurno ,  Yun Zhuang

发明人： Ara Philipossian ,  Yasa Sampurno ,  Yun Zhuang

IPC分类号： B24B7/00 ,  B24B55/00

CPC分类号： B24B53/017 ,  B24B37/042

摘要： The present invention is a method and apparatus for accelerated pulling and fracturing of aggressive diamonds on a CMP diamond conditioner disc wherein aggressive diamonds of known position are pulled or fractured by contacting the diamond conditioner disc to a plate or sheet of a hard material or a plate or sheet containing discrete structures of hard material relative to which the diamond disc is in motion at a determinable and reproducible rate for a determinable and reproducible period of time and the number and position of the pulled or fractured aggressive diamonds are determined following the completion of said contact.

摘要翻译： 本发明是一种用于在CMP金刚石矫正器盘上加速拉伸和压裂侵蚀性钻石的方法和装置，其中已知位置的侵蚀性金刚石通过将金刚石调节盘接触到硬质材料或板材的板或片材而被拉断或断裂 或包含硬质材料的离散结构的片材，相对于该硬质材料，金刚石圆盘以可确定和可再现的速率运动，以确定可重复的时间段，并且在完成所述的时间之后确定拉出的或断裂的侵略性钻石的数量和位置 联系。

公开(公告)号：US20100099333A1

公开(公告)日：2010-04-22

申请号：US12254291

申请日：2008-10-20

申请人： Fransisca Maria Astrid Sudargho ,  Ara Philipossian ,  Leonard Borucki ,  Masanori Furukawa ,  Koichiro Ichikawa

发明人： Fransisca Maria Astrid Sudargho ,  Ara Philipossian ,  Leonard Borucki ,  Masanori Furukawa ,  Koichiro Ichikawa

IPC分类号： B24B49/00 ,  B24B7/20 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B49/16

摘要： A method for (a) determining the shear force between a wafer head and a polishing pad in a polishing tool using a CMP polishing tool with a plate above the wafer head which hangs or rests on the plate. The plate is connected to the CMP polishing tool by (b) low friction motion means (c). A load cell sensor is fixed to the framework of the polishing tool or another immovable structure. (d) The load cell determines the force from the leading edge of the plate when the wafer head is in contact with the polishing pad. (e) Signals from the load cell sensor reporting the shear force. A CMP polishing tool which includes elements corresponding to each of points (a)-(e) in the above method.

摘要翻译： 一种用于（a）使用CMP抛光工具在抛光工具中确定晶片头和抛光垫之间的剪切力的方法，该抛光工具具有悬挂或搁置在板上的晶片头上方的板。 通过（b）低摩擦力运动装置（c）将板连接到CMP抛光工具。 称重传感器固定在抛光工具的框架或其他不可移动的结构上。 （d）当晶片头与抛光垫接触时，称重传感器确定来自板的前缘的力。 （e）报告剪切力的称重传感器传感器的信号。 CMP抛光工具，其包括与上述方法中的点（a） - （e）中的每一个相对应的元件。

公开(公告)号：US20100112905A1

公开(公告)日：2010-05-06

申请号：US12261540

申请日：2008-10-30

申请人： Leonard Borucki ,  Ara Philipossian ,  Masanori Furukawa ,  Koichiro Ichikawa

发明人： Leonard Borucki ,  Ara Philipossian ,  Masanori Furukawa ,  Koichiro Ichikawa

IPC分类号： B24B7/20 ,  B24B41/06 ,  B24B1/00

CPC分类号： B24B37/32

摘要： The present invention is a planar template for a CMP tool polishing head possessing a means of securing a wafer in CMP polishing where the back surface of the template is held to the polishing head by retaining means and a method for using the planar template.

摘要翻译： 本发明是一种用于CMP工具抛光头的平面模板，其具有将晶片固定在CMP抛光中的装置，其中模板的后表面通过保持装置保持在抛光头上，以及使用该平面模板的方法。