公开(公告)号：US06504294B1

公开(公告)日：2003-01-07

申请号：US09613684

申请日：2000-07-11

申请人： Leonard Joseph Mahoney ,  David Ward Brown ,  Rudolph Hugo Petrmichl

发明人： Leonard Joseph Mahoney ,  David Ward Brown ,  Rudolph Hugo Petrmichl

IPC分类号： H01J152

CPC分类号： C23C16/401 ,  C23C16/26 ,  C23C16/486 ,  G11B5/8408 ,  Y10S427/103 ,  Y10S427/104

摘要： A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 Å per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively. The method is particularly advantageous for producing thin, hard, wear resistant DLC and Si-DLC coatings for magnetic transducers and media used for magnetic data storage applications.

摘要翻译： 独特的霍尔电流离子源设备用于DLC涂层的直接离子束沉积，硬度值大于10 GPa，沉积速率大于每秒10埃。 该离子源具有独特的流体冷却阳极，其具有阴影间隙，通过该阴极间隙引入离子源进料气体，同时将等离子体束注入沉积气体。 阴影间隙在阳极表面处提供良好维护的电活性区域，其保持相对不含非导电沉积物。 阳极放电区被绝对密封，以防止放电进入离子源的内部。 描述了一种方法，其中使用在含碳或含碳和含硅的操作的霍尔电流离子源，将衬底设置在真空室内，以高沉积速率涂覆DLC或Si-DLC的涂层 前体气体。 该方法特别有利于生产用于磁性数据存储应用的磁性换能器和介质的薄的，硬的耐磨DLC和Si-DLC涂层。

公开(公告)号：US6086962A

公开(公告)日：2000-07-11

申请号：US243913

申请日：1999-02-03

申请人： Leonard Joseph Mahoney ,  David Ward Brown ,  Rudolph Hugo Petrmichl

发明人： Leonard Joseph Mahoney ,  David Ward Brown ,  Rudolph Hugo Petrmichl

IPC分类号： H05H1/24 ,  C23C14/06 ,  C23C14/32 ,  C23C14/48 ,  C23C16/26 ,  C23C16/40 ,  C23C16/48 ,  G11B5/84 ,  H01J37/32 ,  H01L21/203 ,  H01L21/265 ,  H01L21/302 ,  H05H1/46

CPC分类号： C23C16/401 ,  C23C16/26 ,  C23C16/486 ,  G11B5/8408 ,  Y10S427/103 ,  Y10S427/104

摘要： A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 .ANG. per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively. The method is particularly advantageous for producing thin, hard, wear resistant DLC and Si-DLC coatings for magnetic transducers and media used for magnetic data storage applications.

摘要翻译： 独特的霍尔电流离子源设备用于DLC涂层的直接离子束沉积，其硬度值大于10GPa，沉积速率大于10 ANGSTROM /秒。 该离子源具有独特的流体冷却阳极，其具有阴影间隙，通过该阴极间隙引入离子源进料气体，同时将等离子体束注入沉积气体。 阴影间隙在阳极表面处提供良好维护的电活性区域，其保持相对不含非导电沉积物。 阳极放电区被绝对密封，以防止放电进入离子源的内部。 描述了一种方法，其中使用在含碳或含碳和含硅的操作的霍尔电流离子源，将衬底设置在真空室内，以高沉积速率涂覆DLC或Si-DLC的涂层 前体气体。 该方法特别有利于生产用于磁性数据存储应用的磁性换能器和介质的薄的，硬的耐磨DLC和Si-DLC涂层。

公开(公告)号：US6086796A

公开(公告)日：2000-07-11

申请号：US886922

申请日：1997-07-02

申请人： David Ward Brown ,  Edward George Thear ,  Leonard Joseph Mahoney ,  Rudolph Hugo Petrmichl

发明人： David Ward Brown ,  Edward George Thear ,  Leonard Joseph Mahoney ,  Rudolph Hugo Petrmichl

IPC分类号： C23C14/02 ,  C23C14/06 ,  B29D17/00

CPC分类号： C23C14/024 ,  C23C14/0605 ,  Y10S428/913

摘要： A method is provided for manufacturing a diamond-like carbon (DLC) coated optical phase-change recording medium for use with near-field optical head devices and which exhibits superior wear resistance and improved lifetime. According to the method, the surface of a composite optical phase-change media structure deposited onto a substrate is subjected to ion beam deposition of a DLC over-coat to a thickness of no greater than about 450 .ANG.. Preferably the DLC is ion beam deposited onto the phase-change recording layer at the surface of the medium structure or onto a germanium-containing adhesion-promoting interlayer to achieve the desired adhesion of the DLC to the surface of the medium structure.

摘要翻译： 提供一种用于制造用于近场光学头装置的类金刚石碳（DLC）涂层光学相变记录介质的方法，其表现出优异的耐磨性和改善的寿命。 根据该方法，将沉积在基板上的复合光学相变介质结构的表面进行DLC覆盖层的离子束沉积至不大于约450的厚度。 优选地，DLC是在介质结构的表面上沉积到相变记录层上的离子束或者含有含锗粘附促进中间层的离子束，以实现DLC对介质结构表面的期望的粘附。

公开(公告)号：US6046758A

公开(公告)日：2000-04-04

申请号：US264753

申请日：1999-03-09

申请人： David Ward Brown ,  Melissa Baylog ,  Fred M. Kimock ,  Bradley J. Knapp ,  Rudolph Hugo Petrmichl ,  Edward George Thear

发明人： David Ward Brown ,  Melissa Baylog ,  Fred M. Kimock ,  Bradley J. Knapp ,  Rudolph Hugo Petrmichl ,  Edward George Thear

IPC分类号： B41J2/335

CPC分类号： B41J2/3353 ,  B41J2/33545 ,  B41J2/3355 ,  B41J2/3357 ,  B41J2/3359

摘要： The invention provides a thermal print head with a protective coating of silicon-doped diamond-like carbon (Si-DLC) which imparts superior wear resistance, and improved lifetime. The Si-DLC is comprised of the elements C, H, Si and possibly O, N and Ar. The highly wear and abrasion-resistant Si-DLC diamond-like carbon coating is deposited by ion-assisted plasma deposition including direct ion beam deposition and capacitive radio frequency plasma deposition, from carbon-containing and silicon-containing precursor gases consisting of hydrocarbon, silane, organosilane, organosilazane and organo-oxysilicon compounds, or mixtures thereof. The resulting Si-DLC coating has the properties of Nanoindentation hardness in the range of approximately 10 to 35 GPa, thickness in the range of approximately 0.5 to 20 micrometers, dynamic friction coefficient of less than approximately 0.2, and a silicon concentration in the range of approximately 5 atomic % to approximately 40 atomic %. Optimum performance is obtained when the Si-DLC coating hardness is in the range of approximately 15 to 35 GPa, preferably in the range of about 15 GPa to about 19 GPa, and the Si-DLC layer thickness is in the range of approximately 2 micrometers to approximately 10 micrometers, dynamic friction coefficient of less than approximately 0.15, and a silicon concentration in the range of approximately 10 atomic % to 30 atomic %, preferably in the range of about 15 atomic percent to about 24 atomic percent.

摘要翻译： 本发明提供一种具有硅掺杂的类金刚石碳（Si-DLC）保护涂层的热打印头，其具有优异的耐磨性和改善的寿命。 Si-DLC由元素C，H，Si和可能的O，N和Ar组成。 通过离子辅助等离子体沉积（包括直接离子束沉积和电容射频等离子体沉积）沉积高耐磨和耐磨Si-DLC类金刚石碳涂层，由含碳和硅的前体气体，由烃，硅烷 ，有机硅烷，有机硅氮烷和有机硅氧烷化合物，或其混合物。 所得的Si-DLC涂层具有在约10至35GPa范围内的纳米压痕硬度，约0.5至20微米范围内的厚度，小于约0.2的动摩擦系数，以及硅浓度在 约5原子％至约40原子％。 当Si-DLC涂层硬度在约15至35GPa的范围内，优选在约15GPa至约19GPa的范围内时，获得最佳性能，并且Si-DLC层的厚度在约2微米的范围内 至约10微米，动摩擦系数小于约0.15，硅浓度在约10原子％至30原子％的范围内，优选在约15原子％至约24原子％的范围内。