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1.发明申请CONTINUOUS GROWTH OF SINGLE-WALL CARBON NANOTUBES USING CHEMICAL VAPOR DEPOSITION 有权使用化学蒸气沉积的单壁碳纳米管的连续生长公开(公告)号：US20080206463A1
公开(公告)日：2008-08-28
申请号：US10700386
申请日：2003-11-03
IPC分类号： C23C16/00
CPC分类号： C30B25/18 , B82Y30/00 , C23C16/45576 , C30B29/602 , C30B35/00 , Y10S977/843 , Y10T428/249953
摘要： The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.
摘要翻译： 本发明涉及用于连续生长碳单壁纳米管的化学气相沉积工艺，其中含碳气体组合物与多孔膜接触并在催化剂存在下分解以生长单壁碳纳米管材料。 在多孔膜之间存在压差，使得膜的一侧上的压力小于膜的另一侧上的压力。 单壁碳纳米管生长可主要发生在膜的低压侧上，或者在本发明的不同实施方案中可主要发生在催化剂和膜之间。 本发明还涉及一种与碳气相沉积工艺一起使用的装置。
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2.发明申请Continuous Growth Of Single-Wall Carbon Nanotubes Using Chemical Vapor Deposition 有权使用化学气相沉积的单壁碳纳米管的连续生长公开(公告)号：US20090013931A1
公开(公告)日：2009-01-15
申请号：US12236144
申请日：2008-09-23
CPC分类号： C30B25/18 , B82Y30/00 , C23C16/45576 , C30B29/602 , C30B35/00 , Y10S977/843 , Y10T428/249953
摘要： The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.
摘要翻译： 本发明涉及用于连续生长碳单壁纳米管的化学气相沉积工艺，其中含碳气体组合物与多孔膜接触并在催化剂存在下分解以生长单壁碳纳米管材料。 在多孔膜之间存在压差，使得膜的一侧上的压力小于膜的另一侧上的压力。 单壁碳纳米管生长可主要发生在膜的低压侧上，或者在本发明的不同实施方案中可主要发生在催化剂和膜之间。 本发明还涉及一种与碳气相沉积工艺一起使用的装置。
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3.发明授权Continuous growth of single-wall carbon nanotubes using chemical vapor deposition 有权使用化学气相沉积法连续生长单壁碳纳米管公开(公告)号：US07431965B2
公开(公告)日：2008-10-07
申请号：US10700386
申请日：2003-11-03
IPC分类号： C23C16/00
CPC分类号： C30B25/18 , B82Y30/00 , C23C16/45576 , C30B29/602 , C30B35/00 , Y10S977/843 , Y10T428/249953
摘要： The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.
摘要翻译： 本发明涉及用于连续生长碳单壁纳米管的化学气相沉积工艺，其中含碳气体组合物与多孔膜接触并在催化剂存在下分解以生长单壁碳纳米管材料。 在多孔膜之间存在压差，使得膜的一侧上的压力小于膜的另一侧上的压力。 单壁碳纳米管生长可主要发生在膜的低压侧上，或者在本发明的不同实施方案中可主要发生在催化剂和膜之间。 本发明还涉及一种与碳气相沉积工艺一起使用的装置。
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4.发明授权Continuous growth of single-wall carbon nanotubes using chemical vapor deposition 有权使用化学气相沉积法连续生长单壁碳纳米管公开(公告)号：US08840724B2
公开(公告)日：2014-09-23
申请号：US12236144
申请日：2008-09-23
CPC分类号： C30B25/18 , B82Y30/00 , C23C16/45576 , C30B29/602 , C30B35/00 , Y10S977/843 , Y10T428/249953
摘要： The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.
摘要翻译： 本发明涉及用于连续生长碳单壁纳米管的化学气相沉积工艺，其中含碳气体组合物与多孔膜接触并在催化剂存在下分解以生长单壁碳纳米管材料。 在多孔膜之间存在压差，使得膜的一侧上的压力小于膜的另一侧上的压力。 单壁碳纳米管生长可主要发生在膜的低压侧上，或者在本发明的不同实施方案中可主要发生在催化剂和膜之间。 本发明还涉及一种与碳气相沉积工艺一起使用的装置。
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