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    Cutting tool and method for manufacturing the same
    1.
    发明授权
    Cutting tool and method for manufacturing the same 有权

    公开(公告)号：US11786975B2

    公开(公告)日：2023-10-17

    申请号：US17794989

    申请日：2022-01-25

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Haruko Harada ,  Satoshi Ono ,  Anongsack Paseuth ,  Katsumi Okamura

    IPC分类号： B23B27/14 ,  C23C16/36 ,  C23C16/56 ,  C23C16/455

    CPC分类号： B23B27/148 ,  C23C16/36 ,  C23C16/45576 ,  C23C16/56 ,  B23B2228/105

    摘要： A cutting tool includes a substrate and a coating film, wherein the coating film has a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a relatively high silicon concentration and a layer having a relatively low silicon concentration are alternately stacked, and a maximum value of percentage of number ASi of silicon atoms to a sum of the number ASi of silicon atoms and number ATi of titanium atoms in a grain boundary region between the hard grains, {ASi/(ASi+ATi)}×100, is larger than an average value of percentage of number BSi of silicon atoms to a sum of the number BSi of silicon atoms and number BTi of titanium atoms in the first layer, {BSi/(BSi+BTi)}×100.

    PROCESS GAS SUPPLIER
    3.
    发明申请
    PROCESS GAS SUPPLIER 审中-公开
    过程气体供应商

    公开(公告)号：US20160222510A1

    公开(公告)日：2016-08-04

    申请号：US15008975

    申请日：2016-01-28

    申请人： TGO Tech. Corporation

    发明人： Se Hun YEON ,  Yoo Jin LEE ,  Jae Hak LEE

    IPC分类号： C23C16/455 ,  C23C16/22

    CPC分类号： C23C16/455 ,  C23C16/303 ,  C23C16/4412 ,  C23C16/4488 ,  C23C16/45576 ,  C23C16/4584 ,  C23C16/46

    摘要： A process gas supplier includes an outer tube providing a passage for a first process gas, a first inner tube in the outer tube and providing a passage for a second process gas, a gas reactor at an upper part of the outer tube, accommodating a metal source and generating a third process gas by a reaction between the second process gas and the metal source, a second inner tube in the outer tube and providing a passage for the third process gas, a third inner tube in the outer tube and providing a passage for a fourth process gas, a first gas injector supplying the first process gas to a processing space outside the outer tube, a second gas injector supplying the third process gas to the processing space, and a third gas injector supplying the fourth process gas to the processing space.

    摘要翻译： 工艺气体供应器包括：外管，为第一工艺气体提供通道，外管中的第一内管和第二工艺气体通道，外管上部的气体反应器，容纳金属 通过第二工艺气体和金属源之间的反应产生第三工艺气体，在外管中形成第二内管，并为第三工艺气体提供通道，在外管中提供第三内管，并提供通道 对于第四处理气体，将第一处理气体供给到外管外部的处理空间的第一气体注入器，向处理空间供给第三处理气体的第二气体注入器和向处理空间供给第四处理气体的第三气体注入器， 处理空间。

    SILICON CARBIDE CRYSTAL GROWTH IN A CVD REACTOR USING CHLORINATED CHEMISTRY
    4.
    发明申请
    SILICON CARBIDE CRYSTAL GROWTH IN A CVD REACTOR USING CHLORINATED CHEMISTRY 有权
    使用氯化化学的CVD反应器中的碳化硅晶体生长

    公开(公告)号：US20150013595A1

    公开(公告)日：2015-01-15

    申请号：US14375289

    申请日：2013-01-29

    申请人： Erik Janzén ,  Olof Kordina

    发明人： Erik Janzén ,  Olof Kordina

    IPC分类号： C30B25/14 ,  C23C16/32 ,  C23C16/458 ,  C23C16/455 ,  C23C16/02

    CPC分类号： C30B25/14 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/45576 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/02 ,  C30B25/165 ,  C30B29/36

    摘要： A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method.

    摘要翻译： 一种碳化硅生长方法，用于在加热至1600℃和2000℃之间的温度的热壁反应室中在基底上生长碳化硅晶体。工艺气体利用至少一次气流进入反应室，次级 气流和淋浴气流。 喷淋气体流基本上垂直于主气体和二次气体流动并且被引向衬底。 主气体和次气体基本平行于基底表面定向。 原始气流进入硅前体气体。 烃前体气体进入至少一个主气流，二次气流或淋浴气流中。 氢气主要进入二次流和喷头流。 用于处理该方法的CVD反应器室。

    METHOD FOR FORMING AN ALUMINUM NITRIDE THIN FILM
    5.
    发明申请
    METHOD FOR FORMING AN ALUMINUM NITRIDE THIN FILM 有权
    形成氮化铝薄膜的方法

    公开(公告)号：US20120100698A1

    公开(公告)日：2012-04-26

    申请号：US13189006

    申请日：2011-07-22

    申请人： Koji Kato ,  Shoji Kano ,  Waichi Yamamura

    发明人： Koji Kato ,  Shoji Kano ,  Waichi Yamamura

    IPC分类号： H01L21/205

    CPC分类号： C23C16/4404 ,  C23C16/34 ,  C23C16/45576

    摘要： The method is adapted for forming an aluminum nitride thin film having a high density and a high resistance to thermal shock by a chemical vapor deposition process and includes steps of mixing a gas containing aluminum atoms (Al) and a gas containing nitrogen atoms (N) with a gas containing oxygen atoms (O) and feeding the mixture to a member to be covered by an aluminum nitride thin film.

    摘要翻译： 该方法适用于通过化学气相沉积工艺形成具有高密度和高耐热冲击性的氮化铝薄膜，并且包括将含有铝原子（Al）的气体和含有氮原子（N）的气体混合的步骤， 含有含有氧原子（O）的气体，并将混合物供给要被氮化铝薄膜覆盖的构件。

    SHOWERHEAD FOR FILM DEPOSITING VACUUM EQUIPMENT
    6.
    发明申请
    SHOWERHEAD FOR FILM DEPOSITING VACUUM EQUIPMENT 有权
    薄膜沉积真空设备的淋浴

    公开(公告)号：US20120067971A1

    公开(公告)日：2012-03-22

    申请号：US13375434

    申请日：2010-05-13

    申请人： Chulsoo Byun ,  Man Cheol Han ,  II Yong Chung ,  Seok Woo Lee

    发明人： Chulsoo Byun ,  Man Cheol Han ,  II Yong Chung ,  Seok Woo Lee

    IPC分类号： B05B15/02

    CPC分类号： C23C16/45565 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45591

    摘要： A showerhead for film-depositing vacuum equipment having an effect shortening the length of injection tubes for a reactive gas is presented. The injection tubes extend from the bottom of a reactive gas showerhead module, and two different kinds of reactive gases are mixed with an injection support gas within a reactive showerhead module so as to inject the mixed gas. The showerhead for film-depositing vacuum equipment includes the reactive gas showerhead module above a cooling jacket and a purge gas showerhead module above the reactive gas showerhead module. The injection tubes of the reactive gas showerhead module pass through the cooling jacket disposed below the reactive gas showerhead module, and the injection tubes of the purge gas showerhead module pass through the reactive gas showerhead module disposed below the purge gas showerhead module, thereby enabling the purge gas to flow into a purge gas redistribution space defined above the cooling jacket.

    摘要翻译： 提出了一种用于成膜真空设备的喷头，其具有缩短反应气体的注射管的长度的效果。 注射管从反应性气体喷头模块的底部延伸，并且两种不同种类的反应气体与反应性喷头模块内的注射支撑气体混合，以便注入混合气体。 用于成膜真空设备的喷头包括在冷却套上方的反应性气体喷头模块和在反应性气体喷头模块上方的吹扫气喷头模块。 反应性气体喷头模块的注射管通过设置在反应性气体喷头模块下方的冷却套管，并且吹扫气体喷头模块的注射管通过布置在吹扫气喷头模块下方的反应性气体喷头模块， 吹扫气体流入冷却套管上方定义的净化气体再分布空间。

    Deposition chamber and method for depositing low dielectric constant films
    8.
    发明授权
    Deposition chamber and method for depositing low dielectric constant films 有权
    沉积室和沉积低介电常数膜的方法

    公开(公告)号：US07413627B2

    公开(公告)日：2008-08-19

    申请号：US10997311

    申请日：2004-11-23

    申请人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    发明人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    IPC分类号： H01L21/3065 ,  C23C16/455 ,  C23C16/505

    CPC分类号： C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

    摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

    摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。 氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内 底物支撑。 将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。 气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

    Gas-admission element for CVD processes, and device
    9.
    发明授权
    Gas-admission element for CVD processes, and device 失效
    用于CVD工艺的气体检测元件和装置

    公开(公告)号：US07294207B2

    公开(公告)日：2007-11-13

    申请号：US10395948

    申请日：2003-03-24

    申请人： Gerd Strauch ,  Johannes Kaeppeler ,  Martin Dauelsberg

    发明人： Gerd Strauch ,  Johannes Kaeppeler ,  Martin Dauelsberg

    IPC分类号： C23C16/455 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/18

    CPC分类号： C23C16/45574 ,  C23C16/45508 ,  C23C16/45568 ,  C23C16/45576 ,  C30B25/14

    摘要： The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated susceptor. The first process gas flows through a central line with a central outlet opening and the second process gas flows through a line which is peripheral thereto and which has a peripheral outlet opening that is formed by a gas-permeable gas outlet ring. Said gas outlet ring surrounds a ring-shaped pre-chamber. The invention provides that in order to avoid a parasitic deposition in the area of the peripheral outlet opening, the end section of the gas outlet ring that faces towards the susceptor or the radially outer section of the surface of the gas outlet mechanism surrounding the central outlet opening is cooled by the second process gas according to a truncated cone or revolution hyperboloid shape of a gas guiding surface formed by the pre-chamber back wall.

    摘要翻译： 本发明涉及一种尤其将结晶层特别沉积在晶体基底上的方法。 至少两个工艺气体通过加热的基座上方的气体入口机构彼此分开地引入反应器的处理室。 第一工艺气体通过具有中心出口的中心线流动，第二工艺气体流过周边的管线，并且具有由透气气体出口环形成的周边出口。 所述气体出口环围绕环形预制室。 本发明提供的是，为了避免在周边出口的区域中的寄生沉积，气体出口环的端部朝向基座或气体出口机构的表面的径向外部部分围绕中心出口 根据由前室后壁形成的气体导向表面的截头锥形或旋转双曲面形状，通过第二工艺气体冷却开口。