公开(公告)号：US20170338377A1

公开(公告)日：2017-11-23

申请号：US15367199

申请日：2016-12-02

Applicant: Lextar Electronics Corporation

Inventor： Chung-Chieh YANG ,  Te-Chung WANG

IPC: H01L33/14 ,  H01L33/12 ,  H01L33/02 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/145 ,  H01L33/005 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2933/0033

Abstract: The present invention is a light emitting diode (LED) device including a substrate, a buffer layer, a first conductivity type semiconductor layer, a light emitting layer, an interlayer, an electron blocking layer, and a second conductivity type semiconductor layer. The thickness of the interlayer is substantially thinner than the thickness of the electron blocking layer. In an embodiment of the present invention, the interlayer is doped with a p-type dopant, and the electron blocking layer is doped with a p-type dopant, and the concentration of the p-type dopant of the interlayer is lower than the concentration of the p-type dopant of the electron blocking layer.