公开(公告)号：US20160149077A1

公开(公告)日：2016-05-26

申请号：US15010667

申请日：2016-01-29

Applicant: Lextar Electronics Corporation

Inventor： Chia-Lin HSIAO ,  Nai-Wei HSU ,  Te-Chung WANG ,  Tsung-Yu YANG

IPC: H01L33/14 ,  H01L33/40 ,  H01L33/38 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/14 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/20 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0016 ,  Y10S977/734 ,  Y10S977/95

Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.

Abstract translation: 本发明提供一种发光二极管及其制造方法。 发光二极管包括N型金属电极，与N型金属电极接触的N型半导体层，P型半导体层，介于N型半导体层和N型半导体层之间的发光层 P型半导体层，位于P型半导体层上的低接触电阻材料层，覆盖低接触电阻材料层和P型半导体层的透明导电层，以及P型金属 电极位于透明导电层上。

公开(公告)号：US20240258467A1

公开(公告)日：2024-08-01

申请号：US18631008

申请日：2024-04-09

Applicant: Lextar Electronics Corporation

Inventor： Te-Chung WANG ,  Shiou-Yi KUO

IPC: H01L33/48 ,  H01L21/02 ,  H01L29/06 ,  H01L33/52

CPC classification number: H01L33/486 ,  H01L21/0228 ,  H01L29/0665 ,  H01L33/52 ,  H01L2924/12041

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

公开(公告)号：US20170012175A1

公开(公告)日：2017-01-12

申请号：US15199477

申请日：2016-06-30

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Te-Chung WANG ,  Shih-Huan LAI ,  Shiou-Yi KUO

IPC: H01L33/46 ,  H01L27/15 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L27/156 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382

Abstract: A light-emitting element is provided, including: a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer; a current-conduction layer disposed on the second-type semiconductor layer; a first electrode disposed on the current-conduction layer and exposing a portion thereof; a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer; and a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer.

Abstract translation: 提供了一种发光元件，包括：依次包括第一类型半导体层，发光层和第二类型半导体层的发光单元，其中，所述发光单元具有通过所述第二类型半导体层的开口， 型半导体层和发光层以暴露第一型半导体层的一部分; 设置在所述第二类型半导体层上的电流传导层; 第一电极，设置在电流传导层上并暴露其一部分; 分布布拉格反射器，布置在第一电极上并覆盖电流传导层的暴露部分; 以及设置在所述分布式布拉格反射器上并填充所述开口以电连接到所述第一类型半导体层的第二电极。

公开(公告)号：US20160111602A1

公开(公告)日：2016-04-21

申请号：US14986559

申请日：2015-12-31

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Nai-Wei HSU ,  Te-Chung WANG

IPC: H01L33/40 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/382 ,  H01L33/44

Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold, palladium or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.

Abstract translation: 公开了一种发光二极管（LED）芯片。 该芯片包括发光二极管和发光二极管上的电极层。 电极层包括反射金属层。 反射金属层包括第一组合物和第二组合物。 第一组合物包括铝或银，第二组合物包括铜，硅，锡，铂，金，钯或其组合。 第二组合物的重量百分比大于0％且小于20％。

公开(公告)号：US20230299056A1

公开(公告)日：2023-09-21

申请号：US18185531

申请日：2023-03-17

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Te-Chung WANG ,  Guo-Yi SHIU

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/10 ,  H01L25/16 ,  H01L27/12

CPC classification number: H01L25/0753 ,  H01L33/62 ,  H01L33/10 ,  H01L25/167 ,  H01L27/124

Abstract: A light-emitting diode device including a pixel structure including first, second and third light-emitting diode chips, a passivation layer, and first, second, third and fourth circuit layers is provided. The first and second light-emitting diode chips are positioned on a top surface opposite to a light-emitting surface of the third light-emitting diode chip. First and second vertical projections of the first and second light-emitting diode chips on the top surface do not overlap each other. First and second bonding surfaces of the first and second circuit layers corresponding to openings in the passivation layer are positioned to overlap the first vertical projection and are separated from the second vertical projection. Third and fourth bonding surfaces of the third and fourth circuit layers that correspond to openings in the passivation layer are positioned to overlap the second vertical projection and are separated from the first vertical projection.

公开(公告)号：US20230207744A1

公开(公告)日：2023-06-29

申请号：US18172283

申请日：2023-02-21

Applicant: Lextar Electronics Corporation

Inventor： Te-Chung WANG ,  Shiou-Yi KUO

IPC: H01L33/48 ,  H01L33/52 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L33/486 ,  H01L33/52 ,  H01L29/0665 ,  H01L21/0228 ,  H01L2924/12041

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

公开(公告)号：US20200235266A1

公开(公告)日：2020-07-23

申请号：US16742891

申请日：2020-01-14

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Te-Chung WANG

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L33/22 ,  H01L33/42

Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.

公开(公告)号：US20180019575A1

公开(公告)日：2018-01-18

申请号：US15638356

申请日：2017-06-29

Applicant: Lextar Electronics Corporation

Inventor： Te-Chung WANG ,  Shiou-Yi KUO ,  Jun-Rong CHEN

IPC: H01S5/32 ,  H01L33/60 ,  H01S5/042 ,  H01S5/18

CPC classification number: H01S5/3211 ,  H01L33/60 ,  H01S5/0425 ,  H01S5/18 ,  H01S5/20

Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.

公开(公告)号：US20240405168A1

公开(公告)日：2024-12-05

申请号：US18675511

申请日：2024-05-28

Applicant: Lextar Electronics Corporation

Inventor： Yi-Chan YANG ,  Wen-Syun WANG ,  Te-Chung WANG

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device is provided. The light-emitting device includes a circuit board and a connection board disposed on the circuit board and having a first pad, a second pad, and a third pad. The light-emitting device also includes a first light-emitting element disposed on the connection board and having a first electrode and a second electrode and a second light-emitting element adjacent to the first light-emitting element and having a third electrode and a fourth electrode. The light-emitting device further includes a light-converting layer disposed on the first light-emitting element and the second light-emitting element. The thermal expansion coefficient of the connection board is smaller than the thermal expansion coefficient of the circuit board.

公开(公告)号：US20230068872A1

公开(公告)日：2023-03-02

申请号：US17818720

申请日：2022-08-10

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Te-Chung WANG

IPC: H01L33/46 ,  H01L33/20

Abstract: A light-emitting element includes a first reflection layer, a second reflection layer, a multi-layer light-emitting structure, and a light-transmitting semiconductor layer. The first reflection layer has a first reflectance, and the second reflection layer has a second reflectance greater than the first reflectance. The multi-layer light-emitting structure is between the first reflection layer and the second reflection layer. The light-transmitting semiconductor layer is located on the first reflection layer and has an upper light-extracting surface, and the first reflection layer is closer to the upper light-extracting surface than the second reflection layer. An interval between the upper light-extracting surface and the first reflection layer is equal to or smaller than 5 μm.