公开(公告)号：US20230078065A1

公开(公告)日：2023-03-16

申请号：US18051019

申请日：2022-10-31

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shih-Wei YANG

IPC: H01L33/14 ,  H01L33/46 ,  H01L33/52

Abstract: The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.

公开(公告)号：US20220384693A1

公开(公告)日：2022-12-01

申请号：US17446170

申请日：2021-08-27

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shiou-Yi KUO

IPC: H01L33/54

Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes a first insulation layer disposed on and covering the first surface and one part of the sidewalls. The light-emitting element further includes multiple connection pads physically contact the first surface and protruding from the first insulation layer, as well as a second insulation layer disposed on and covering the second surface and the other part of the sidewalls. The second insulation layer includes a cover portion and protrusion portions. The cover portion covers the whole second surface and the other part of the sidewalls. The protrusion portions are disposed on the sidewalls, protrude from the cover portion and extend laterally.

公开(公告)号：US20230335680A1

公开(公告)日：2023-10-19

申请号：US18336040

申请日：2023-06-16

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shih-Wei YANG ,  Tsai-Chen SUNG

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/22 ,  H01L27/15 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/42 ,  H01L33/22 ,  H01L27/156 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62

Abstract: The light emitting device includes a growth substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the growth substrate from top to bottom. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars. The second electrode is electrically connected to the conductive pillar.

公开(公告)号：US20230197905A1

公开(公告)日：2023-06-22

申请号：US18078018

申请日：2022-12-08

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shiou-Yi KUO ,  Guo-Yi SHIU

IPC: H01L33/46 ,  H01L25/075 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/382 ,  H01L33/005 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting device includes a substrate, a plurality of light-emitting diode (LED) dies, a first reflection layer, and a second reflection layer. The LED dies are on the substrate. The first reflection layer is on the LED dies. The second reflection layer is on the first reflection layer. The first reflection layer is configured to reflect a waveband of light emitted from the LED dies. The second reflection layer is configured to reflect a laser waveband, wherein the wavelength of the laser waveband is less than 420 nm.

公开(公告)号：US20240274764A1

公开(公告)日：2024-08-15

申请号：US18633496

申请日：2024-04-11

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shiou-Yi KUO

IPC: H01L33/54 ,  H01L25/075 ,  H01L25/16 ,  H01L33/00

CPC classification number: H01L33/54 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/0093 ,  H01L33/0095 ,  H01L2933/005

Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes an insulation structure covering the first surface, the second surface, and the sidewalls. The light-emitting element further includes multiple connection pads disposed on the first surface. In a cross-sectional view, the insulation layer includes a plurality of protrusion portions disposed on the sidewalls. Each of the protrusion portions protrudes from the sidewalls and extends laterally with a protrusion length. The protrusion length of one of the plurality of protrusion portions is different from that of another one of the plurality of protrusion portions.

公开(公告)号：US20230057589A1

公开(公告)日：2023-02-23

申请号：US17662658

申请日：2022-05-10

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shiou-Yi KUO ,  Guo-Yi SHIU

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/10

Abstract: A light-emitting diode chip includes a semiconductor layer, an insulating layer, a first and a second electrode. The semiconductor layer has a top side, a bottom side opposite to the top side and a sidewall connecting the top side and the bottom side, and a concave-convex structure is at the top side of the semiconductor layer. The insulating layer covers the sidewall and the bottom side of the semiconductor layer, and has a protruding portion extending and protruding above the concave-convex structure along a direction parallel to the sidewall. A vertical distance between a highest point of the concave-convex structure and that of the protruding portion is from 0.5 μm to four times the thickness of the semiconductor layer. The first and the second electrode are on the bottom side of the semiconductor layer and penetrate through the insulating layer. The second electrode is adjacent to the first electrode.

公开(公告)号：US20220013692A1

公开(公告)日：2022-01-13

申请号：US17246693

申请日：2021-05-02

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shih-Wei YANG ,  Tsai-Chen SUNG

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62

Abstract: The light emitting device includes a substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the substrate from bottom to top. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars. The second electrode is electrically connected to the conductive pillar.

公开(公告)号：US20210288213A1

公开(公告)日：2021-09-16

申请号：US17027685

申请日：2020-09-21

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shih-Wei YANG

IPC: H01L33/14 ,  H01L33/46 ,  H01L33/52

Abstract: The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are different.