利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.026 秒)

    MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER
    2.
    发明申请
    MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER 审中-公开
    磁铁隧道与铁矿石层之间的自由层和隧道障碍

    公开(公告)号：US20120241878A1

    公开(公告)日：2012-09-27

    申请号：US13071043

    申请日：2011-03-24

    申请人： Guohan Hu ,  Janusz J. Nowak ,  Philip L. Trouilloud ,  Daniel C. Worledge

    发明人： Guohan Hu ,  Janusz J. Nowak ,  Philip L. Trouilloud ,  Daniel C. Worledge

    IPC分类号： H01L29/82 ,  H01L21/8239

    CPC分类号： H01L43/12 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08

    摘要： A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.

    摘要翻译： 用于磁性随机存取存储器（MRAM）的磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 形成在自由层上的铁（Fe）除尘层; 形成在除尘层上的绝缘隧道屏障; 以及具有不变磁化方向的磁性固定层，邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间; 其中自由层和固定层具有垂直的磁各向异性并且通过隧道势垒磁耦合。

    SPIN-TORQUE MAGNETORESISTIVE STRUCTURES WITH BILAYER FREE LAYER
    5.
    发明申请
    SPIN-TORQUE MAGNETORESISTIVE STRUCTURES WITH BILAYER FREE LAYER 审中-公开
    具有双层自由层的旋转扭矩磁阻结构

    公开(公告)号：US20120329177A1

    公开(公告)日：2012-12-27

    申请号：US13602749

    申请日：2012-09-04

    申请人： David William Abraham ,  Guohan Hu ,  Jonathan Zanhong Sun ,  Daniel Christopher Worledge

    发明人： David William Abraham ,  Guohan Hu ,  Jonathan Zanhong Sun ,  Daniel Christopher Worledge

    IPC分类号： H01L43/10

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

    摘要： Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.

    摘要翻译： 介绍了磁阻结构，器件，记忆及其形成方法。 例如，磁阻结构包括铁磁层，耦合到铁磁层的铁磁性层，被钉扎层和非磁性间隔层。 磁阻结构的自由侧包括铁磁层和铁氧体层。 非磁性间隔层至少部分地在自由侧和被钉扎层之间。 铁磁层的饱和磁化强度与铁氧体层的饱和磁化强度相反。 非磁性间隔层可以包括隧道阻挡层，例如由氧化镁（MgO）或非磁性金属层构成的阻挡层。

    MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY
    6.
    发明申请
    MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY 审中-公开
    具有用于旋转磁传递随机访问存储器的全息磁性ANISOTROPY的磁性堆叠

    公开(公告)号：US20120267733A1

    公开(公告)日：2012-10-25

    申请号：US13093287

    申请日：2011-04-25

    申请人： Guohan Hu ,  Janusz J. Nowak ,  Philip L. Troilloud ,  Daniel C. Worledge

    发明人： Guohan Hu ,  Janusz J. Nowak ,  Philip L. Troilloud ,  Daniel C. Worledge

    IPC分类号： H01L29/82 ,  H01L21/8239

    CPC分类号： G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.

    摘要翻译： 磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 位于邻近自由层的绝缘隧道屏障; 具有不变磁化方向的磁性固定层，所述固定层邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间，其中所述自由层和所述固定层具有垂直的磁各向异性; 以及复合固定层中的一个或多个，所述复合固定层包括除尘层，间隔层和参考层; 合成反铁磁（SAF）固定层结构，SAF固定层结构包括位于固定层和第二固定磁性层之间的SAF间隔物; 和偶极子层，其中自由层位于偶极层和隧道势垒之间。

    Spin-Torque Magnetoresistive Structures with Bilayer Free Layer
    8.
    发明申请
    Spin-Torque Magnetoresistive Structures with Bilayer Free Layer 审中-公开
    具有双层自由层的自旋扭矩磁阻结构

    公开(公告)号：US20100320550A1

    公开(公告)日：2010-12-23

    申请号：US12489987

    申请日：2009-06-23

    申请人： David William Abraham ,  Guohan Hu ,  Jonathan Zanhong Sun ,  Daniel Christopher Worledge

    发明人： David William Abraham ,  Guohan Hu ,  Jonathan Zanhong Sun ,  Daniel Christopher Worledge

    IPC分类号： H01L29/82 ,  H01L21/00

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

    摘要： Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.

    摘要翻译： 介绍了磁阻结构，器件，记忆及其形成方法。 例如，磁阻结构包括铁磁层，耦合到铁磁层的铁磁性层，被钉扎层和非磁性间隔层。 磁阻结构的自由侧包括铁磁层和铁氧体层。 非磁性间隔层至少部分地在自由侧和被钉扎层之间。 铁磁层的饱和磁化强度与铁磁性层的饱和磁化强度相反。 非磁性间隔层可以包括隧道阻挡层，例如由氧化镁（MgO）或非磁性金属层构成的阻挡层。

    Magnetic devices and structures
    9.
    发明授权
    Magnetic devices and structures 失效
    磁性器件和结构

    公开(公告)号：US08717808B2

    公开(公告)日：2014-05-06

    申请号：US13489746

    申请日：2012-06-06

    申请人： Guohan Hu ,  Jonathan Z. Sun

    发明人： Guohan Hu ,  Jonathan Z. Sun

    IPC分类号： G11C11/00

    CPC分类号： G11C11/161

    摘要： Magnetic devices, magnetoresistive structures, and methods and techniques associated with the magnetic devices and magnetoresistive structures are presented. For example, a magnetic device is presented. The magnetic device includes a ferromagnet, an antiferromagnet coupled to the ferromagnet, and a nonmagnetic metal proximate to the ferromagnet. The antiferromagnet provides uniaxial anisotropy to the magnetic device. A resistance of the nonmagnetic metal is dependent upon a direction of a magnetic moment of the ferromagnet.

    摘要翻译： 提出了磁性器件，磁阻结构以及与磁性器件和磁阻结构相关联的方法和技术。 例如，呈现磁性装置。 磁性装置包括铁磁体，耦合到铁磁体的反铁磁体和靠近铁磁体的非磁性金属。 反铁磁体对磁性装置提供单轴各向异性。 非磁性金属的电阻取决于铁磁体的磁矩的方向。

    MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER
    10.
    发明申请
    MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER 审中-公开
    磁铁隧道与铁矿石层之间的自由层和隧道障碍

    公开(公告)号：US20130005052A1

    公开(公告)日：2013-01-03

    申请号：US13604236

    申请日：2012-09-05

    申请人： Guohan Hu ,  Janusz J. Nowak ,  Philip L. Trouilloud ,  Daniel C. Worledge

    发明人： Guohan Hu ,  Janusz J. Nowak ,  Philip L. Trouilloud ,  Daniel C. Worledge

    IPC分类号： H01L43/12

    CPC分类号： H01L43/12 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08

    摘要： A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.

    摘要翻译： 用于磁性随机存取存储器（MRAM）的磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 形成在自由层上的铁（Fe）除尘层; 形成在除尘层上的绝缘隧道屏障; 以及具有不变磁化方向的磁性固定层，邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间; 其中自由层和固定层具有垂直的磁各向异性并且通过隧道势垒磁耦合。