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14 条记录 (耗时 0.015 秒)

    Highlighter
    1.
    外观设计
    Highlighter 有权

    公开(公告)号：USD572754S1

    公开(公告)日：2008-07-08

    申请号：US29280617

    申请日：2007-06-01

    申请人： Liming Li

    设计人： Liming Li

    CMM moving path adjustment assisting method and apparatus
    5.
    发明授权
    CMM moving path adjustment assisting method and apparatus 有权

    公开(公告)号：US09995574B2

    公开(公告)日：2018-06-12

    申请号：US13365539

    申请日：2012-02-03

    申请人： Liming Li

    发明人： Liming Li

    IPC分类号： G01B5/008 ,  G01B21/04 ,  G05B19/4093

    CPC分类号： G01B21/04 ,  G05B19/4093 ,  G05B2219/35128 ,  Y02P90/265

    摘要： A method is provided to assist adjustment for a movement path of a probe. A coordinate measuring machine includes a probe having a tip for detecting a surface of an object, and a movement mechanism for moving the probe, and measures a shape of the object by allowing the probe tip to scan the surface. A controller controls operation of the coordinate measuring machine by calculating a scanning path for allowing the probe tip to perform scanning movement and the movement path followed by the probe when the probe tip moves along the scanning path, setting control points on a line connecting each position of the probe tip and each corresponding position of the probe accepting a change in position of the control points by a user, and changing the movement path accordingly. An adjustment guide unit in the controller allows the control points to move collectively.

    High voltage FINFET structure
    6.
    发明授权
    High voltage FINFET structure 有权
    高电压FINFET结构

    公开(公告)号：US09006055B2

    公开(公告)日：2015-04-14

    申请号：US13754065

    申请日：2013-01-30

    申请人： Han Xiao ,  Shaoqiang Zhang ,  Sanford Chu ,  Liming Li

    发明人： Han Xiao ,  Shaoqiang Zhang ,  Sanford Chu ,  Liming Li

    IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L29/78

    CPC分类号： H01L29/66795 ,  H01L29/785 ,  H01L29/7855

    摘要： Methods for forming FIN-shaped field effect transistors (FINFETs) capable of withstanding high voltage applications and the resulting devices are disclosed. Embodiments include forming a source and a drain on a substrate, forming a thin body (FIN) on the substrate and connecting the source and the drain, forming a gate over top and side surfaces of a first part of the FIN, thereby defining a drain-side FIN region of the FIN between the gate and the drain, and forming a shielding region over top and side surfaces of a second part of the FIN in the drain-side FIN region.

    摘要翻译： 公开了能够承受高电压应用的FIN形状场效应晶体管（FINFET）和所得到的器件的方法。 实施例包括在衬底上形成源极和漏极，在衬底上形成薄体（FIN）并连接源极和漏极，在FIN的第一部分的顶部和侧面上形成栅极，由此限定漏极 在栅极和漏极之间的FIN的FIN边缘区域，并且在漏极侧FIN区域中在FIN的第二部分的顶表面和侧表面上形成屏蔽区域。

    Dual-tip highlighter
    7.
    外观设计
    Dual-tip highlighter 有权
    双头荧光笔

    公开(公告)号：USD589555S1

    公开(公告)日：2009-03-31

    申请号：US29284676

    申请日：2007-09-13

    申请人： Liming Li

    设计人： Liming Li

    Highlighter
    10.
    外观设计
    Highlighter 有权

    公开(公告)号：USD581461S1

    公开(公告)日：2008-11-25

    申请号：US29284665

    申请日：2007-09-12

    申请人： Liming Li

    设计人： Liming Li