Methods and systems for detecting defects on an electronic assembly

    公开(公告)号:US11852684B2

    公开(公告)日:2023-12-26

    申请号:US18194264

    申请日:2023-03-31

    CPC classification number: G01R31/318511 G01R31/31718 H01L22/12

    Abstract: A method of identifying defects in an electronic assembly, comprising, by a processing unit, obtaining a grid of nodes representative of a location of electronic units of an electronic assembly, wherein each node is neighboured by at most eight other nodes, wherein a first plurality of nodes represents failed electronic units according to at least one test criterion, and a second plurality of nodes represents passing electronic units according to the least one first test criterion, based on the grid, determining at least one first and second straight lines, and attempting to connect the first and second straight lines into a new line, wherein if at least one node from the new line belongs to the second plurality of nodes, concluding that an electronic unit represented by the node on the grid is a failed electronic unit, thereby facilitating identification of a failed electronic unit on the substrate.

    SYSTEM AND METHOD FOR ADAPTIVE TESTING OF SEMICONDUCTOR PRODUCT

    公开(公告)号:US20180364302A1

    公开(公告)日:2018-12-20

    申请号:US15623366

    申请日:2017-06-14

    Inventor: Long Chieu

    CPC classification number: G01R31/2894 G01R31/287 G01R31/31707 G01R31/31718

    Abstract: A method for testing a plurality of electronic devices includes performing tests of up to m devices at a time to measure device parameters on a device tester configured to test up to m devices at a time, where m is an integer. After each test, the method includes performing statistical analysis of the measured device parameters for all tested devices to determine statistical data, including updated mean and standard deviation for each parameter, and storing only the statistical data, and not the measured device parameters. The method further includes determining new pass/fail limits for each device parameter based on the updated mean and standard deviation, and determining pass or fail of each device based on the new pass/fail limits for each device parameter.

    System Test Mode For Electricity Meter In A Metering Network

    公开(公告)号:US20180074123A1

    公开(公告)日:2018-03-15

    申请号:US15266604

    申请日:2016-09-15

    Abstract: A system and method are provided for testing the ability of a meter to issue a notification to a utility head-end. The method comprises: entering the meter into a system test mode, wherein in system test mode the meter records actual data, actual events, and actual errors in an actual table in a memory, and the meter receives commands to induce simulated events and errors; receiving a command to induce an event or error in the meter; recording, in a test table in the memory of the meter, information indicative of the occurrence of the induced event or error; and transmitting to the utility head-end, while the meter remains in the system test mode, the information stored in the test table.

    Threshold voltage (VT)-type transistor sensitive and/or fan-out sensitive selective voltage binning

    公开(公告)号:US09653330B1

    公开(公告)日:2017-05-16

    申请号:US15015535

    申请日:2016-02-04

    CPC classification number: G01R31/31718 H01L22/14 H01L22/20 H01L22/34

    Abstract: Disclosed are methods for performing threshold voltage (VT)-type transistor sensitive and/or fan-out sensitive selective voltage binning (SVB) to improve SVB accuracy and, thereby product yield and reliability. In the methods, a process distribution for an integrated circuit chip design is divided into process windows, each associated with a corresponding performance range and a corresponding minimum supply voltage. First performance measurements are acquired from first performance monitors associated with first transistors on chips manufactured according to the design. Based on the first performance measurements, the chips are assigned to groups corresponding to the process windows. Second performance measurements are also be acquired from second performance monitors associated with second transistors, which are on the chips and which have either a different VT-type or a different maximum fan-out than the first transistors. Based on the second performance measurements, a determination is made as to whether chip group reassignment is warranted.

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