公开(公告)号：US06873551B2

公开(公告)日：2005-03-29

申请号：US10622804

申请日：2003-07-18

申请人： Lorenzo Bedarida ,  Andrea Sacco ,  Monica Marziani

发明人： Lorenzo Bedarida ,  Andrea Sacco ,  Monica Marziani

IPC分类号： G11C7/06 ,  G11C7/14 ,  G11C16/06

CPC分类号： G11C7/14 ,  G11C7/062 ,  G11C2207/063

摘要： A configurable mirror sense amplifier system for flash memory having the following features. A power source generates a reference voltage. A plurality of transistors is biased at the reference voltage. The plurality of transistors is each coupled to a second transistor. Each of the plurality of transistors is also configured to provide a current for comparison with the flash memory. The reference voltage is internal, stable and independent from variations of a power supply or temperature. The plurality of transistors is in parallel with one another. A mirror transistor is coupled to the plurality of transistors. The plurality of transistors is configured so that at least one of at least one transistor is activated with a signal in order to provide the current for comparison to the flash memory. Also, the reference voltage may be modified in order to modify the current for comparison to the flash memory.

摘要翻译： 一种用于闪存的可配置的镜像放大器系统，具有以下特征。 电源产生参考电压。 多个晶体管被偏置在参考电压。 多个晶体管各自耦合到第二晶体管。 多个晶体管中的每一个也被配置为提供用于与闪速存储器进行比较的电流。 参考电压是内部的，稳定的，独立于电源或温度的变化。 多个晶体管彼此并联。 反射镜晶体管耦合到多个晶体管。 多个晶体管被配置为使得至少一个晶体管中的至少一个被激活，以便提供用于与闪存相比较的电流。 此外，可以修改参考电压以便修改用于与闪存存储器进行比较的电流。

公开(公告)号：US20060279988A1

公开(公告)日：2006-12-14

申请号：US11193924

申请日：2005-07-28

申请人： Lorenzo Bedarida ,  Andrea Sacco ,  Giorgio Oddone ,  Simone Bartoli

发明人： Lorenzo Bedarida ,  Andrea Sacco ,  Giorgio Oddone ,  Simone Bartoli

IPC分类号： G11C16/04

CPC分类号： G11C16/26

摘要： A method and system for approximating resistance in a non-volatile memory has a memory matrix. The memory matrix has a plurality of memory cells and a plurality of memory source lines that are coupled to the plurality of memory cells. A reference matrix is coupled to the memory matrix and has a reference cell. A logic generator is coupled to the reference matrix and is configured to generate an approximation, at the reference cell, of a resistance between a selected one of the plurality of memory cells and at least one of the plurality of memory source lines.

摘要翻译： 用于近似非易失性存储器中的电阻的方法和系统具有存储器矩阵。 存储矩阵具有耦合到多个存储单元的多个存储器单元和多个存储器源极线。 参考矩阵耦合到存储器矩阵并具有参考单元。 逻辑发生器耦合到参考矩阵，并被配置为在参考单元处产生多个存储器单元中的所选择的一个与多个存储器源极线中的至少一个之间的电阻的近似。

公开(公告)号：US07283396B2

公开(公告)日：2007-10-16

申请号：US11193924

申请日：2005-07-28

申请人： Lorenzo Bedarida ,  Andrea Sacco ,  Giorgio Oddone ,  Simone Bartoli

发明人： Lorenzo Bedarida ,  Andrea Sacco ,  Giorgio Oddone ,  Simone Bartoli

IPC分类号： G11C16/06

CPC分类号： G11C16/26

摘要： A method and system for approximating resistance in a non-volatile memory has a memory matrix. The memory matrix has a plurality of memory cells and a plurality of memory source lines that are coupled to the plurality of memory cells. A reference matrix is coupled to the memory matrix and has a reference cell. A logic generator is coupled to the reference matrix and is configured to generate an approximation, at the reference cell, of a resistance between a selected one of the plurality of memory cells and at least one of the plurality of memory source lines.

摘要翻译： 用于近似非易失性存储器中的电阻的方法和系统具有存储器矩阵。 存储矩阵具有耦合到多个存储单元的多个存储器单元和多个存储器源极线。 参考矩阵耦合到存储器矩阵并具有参考单元。 逻辑发生器耦合到参考矩阵，并被配置为在参考单元处产生多个存储器单元中的所选择的一个与多个存储器源极线中的至少一个之间的电阻的近似。

公开(公告)号：US20060170490A1

公开(公告)日：2006-08-03

申请号：US11393153

申请日：2006-03-29

申请人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

发明人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

IPC分类号： G05F1/10

CPC分类号： G05F3/262

摘要： A current mirror comprising: current source; a first p-channel transistor having a source coupled to operating potential, and a gate and drain coupled to current source; a second p-channel transistor having a source coupled to operating potential, a gate coupled to gate of first p-channel transistor, and a drain; a zero-threshold p-channel transistor having a source coupled to drain of second p-channel transistor, a gate coupled to gate of first p-channel transistor, and a drain; a first n-channel transistor having a source coupled to ground, and a gate and drain coupled to drain of zero-threshold p-channel transistor; a second n-channel transistor having a source coupled to ground, a gate coupled to gate of first n-channel transistor, and a drain; and a zero-threshold n-channel transistor having a source coupled to drain of second n-channel transistor, a gate coupled to gate of first n-channel transistor, and a drain coupled to current-output node.

摘要翻译： 电流镜，包括：电流源; 具有耦合到工作电位的源极的第一p沟道晶体管和耦合到电流源的栅极和漏极; 具有耦合到工作电位的源极的第二p沟道晶体管，耦合到第一p沟道晶体管的栅极的栅极和漏极; 零阈值p沟道晶体管，其具有耦合到第二p沟道晶体管的漏极的源极，耦合到第一p沟道晶体管的栅极的栅极和漏极; 第一n沟道晶体管，其具有耦合到地的源极，以及耦合到零阈值p沟道晶体管的漏极的栅极和漏极; 具有耦合到地的源极的第二n沟道晶体管，耦合到第一n沟道晶体管的栅极的栅极和漏极; 以及零阈值n沟道晶体管，其具有耦合到第二n沟道晶体管的漏极的源极，耦合到第一n沟道晶体管的栅极的栅极和耦合到电流输出节点的漏极。

公开(公告)号：US20050226051A1

公开(公告)日：2005-10-13

申请号：US11102031

申请日：2005-04-07

申请人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

发明人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

IPC分类号： G05F3/26 ,  G11C16/04

CPC分类号： G05F3/262

摘要： A current mirror comprising: a first current source; a first n-channel MOS transistor having a drain and a gate coupled to said current source and a source coupled to ground; a second n-channel MOS transistor having a drain, a gate coupled to said drain and said gate of said first n-channel MOS transistor, and a source coupled to ground; a third n-channel MOS transistor having a source coupled to said drain of said second n-channel MOS transistor, a gate, and a drain comprising an output-current node; a second current source; a p-channel MOS transistor having a drain coupled to ground, a source coupled to said second current source and said gate of said third n-channel MOS transistor, and a gate coupled to said drain and said gate of said first n-channel MOS transistor.

摘要翻译： 一种电流镜，包括：第一电流源; 第一n沟道MOS晶体管，其具有耦合到所述电流源的漏极和栅极以及耦合到地的源极; 具有漏极的第二n沟道MOS晶体管，耦合到所述漏极的栅极和所述第一n沟道MOS晶体管的所述栅极以及耦合到地的源极; 第三n沟道MOS晶体管，具有耦合到所述第二n沟道MOS晶体管的所述漏极的源极，栅极和包括输出电流节点的漏极; 第二个电流源; 具有耦合到地的漏极的p沟道MOS晶体管，耦合到所述第二电流源和所述第三n沟道MOS晶体管的所述栅极的源极，以及耦合到所述第一n沟道MOS晶体管的所述漏极和所述栅极的栅极 晶体管。

公开(公告)号：US06954102B2

公开(公告)日：2005-10-11

申请号：US10407640

申请日：2003-04-03

申请人： Lorenzo Bedarida ,  Andrea Sacco ,  Mirella Marsella ,  Massimiliano Frulio

发明人： Lorenzo Bedarida ,  Andrea Sacco ,  Mirella Marsella ,  Massimiliano Frulio

IPC分类号： G11C7/06 ,  G11C7/14 ,  G11C16/28 ,  G03F1/10

CPC分类号： G11C7/14 ,  G11C7/062 ,  G11C7/067 ,  G11C16/28 ,  G11C2207/063

摘要： A memory cell sensing circuit to sense data from a memory cell includes a reference memory cell coupled to pass a reference current. A sense amplifier has a first input and a second input coupled to a bias circuit of the data memory cell. A first mirror mirrors the reference current to a voltage coupled to the first input of the sense amplifier. A second mirror mirrors the reference current to a voltage coupled to the bias circuit of the data memory cell. A third mirror mirrors the reference current to a voltage coupled to the second input of the sense amplifier through a pass gate.

摘要翻译： 用于感测来自存储器单元的数据的存储单元感测电路包括耦合以传递参考电流的参考存储单元。 读出放大器具有耦合到数据存储单元的偏置电路的第一输入和第二输入。 第一镜将参考电流反射到耦合到读出放大器的第一输入端的电压。 第二镜将参考电流反射到耦合到数据存储单元的偏置电路的电压。 第三反射镜将参考电流反射到通过传输门耦合到读出放大器的第二输入的电压。

公开(公告)号：US07242242B2

公开(公告)日：2007-07-10

申请号：US11393153

申请日：2006-03-29

申请人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

发明人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

IPC分类号： G05F1/10

CPC分类号： G05F3/262

摘要： A current mirror comprising: current source; a first p-channel transistor having a source coupled to operating potential, and a gate and drain coupled to current source; a second p-channel transistor having a source coupled to operating potential, a gate coupled to gate of first p-channel transistor, and a drain; a zero-threshold p-channel transistor having a source coupled to drain of second p-channel transistor, a gate coupled to gate of first p-channel transistor, and a drain; a first n-channel transistor having a source coupled to ground, and a gate and drain coupled to drain of zero-threshold p-channel transistor; a second n-channel transistor having a source coupled to ground, a gate coupled to gate of first n-channel transistor, and a drain; and a zero-threshold n-channel transistor having a source coupled to drain of second n-channel transistor, a gate coupled to gate of first n-channel transistor, and a drain coupled to current-output node.

摘要翻译： 电流镜，包括：电流源; 具有耦合到工作电位的源极的第一p沟道晶体管和耦合到电流源的栅极和漏极; 具有耦合到工作电位的源极的第二p沟道晶体管，耦合到第一p沟道晶体管的栅极的栅极和漏极; 零阈值p沟道晶体管，其具有耦合到第二p沟道晶体管的漏极的源极，耦合到第一p沟道晶体管的栅极的栅极和漏极; 第一n沟道晶体管，其具有耦合到地的源极，以及耦合到零阈值p沟道晶体管的漏极的栅极和漏极; 具有耦合到地的源极的第二n沟道晶体管，耦合到第一n沟道晶体管的栅极的栅极和漏极; 以及零阈值n沟道晶体管，其具有耦合到第二n沟道晶体管的漏极的源极，耦合到第一n沟道晶体管的栅极的栅极和耦合到电流输出节点的漏极。

公开(公告)号：US07236050B2

公开(公告)日：2007-06-26

申请号：US11393070

申请日：2006-03-29

申请人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

发明人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

IPC分类号： G05F1/10

CPC分类号： G05F3/262

摘要： A current mirror comprising: a current source; a first p-channel MOS transistor having a source coupled to an operating potential, and a gate and a drain coupled to the current source; a second p-channel MOS transistor having a source coupled to the operating potential, a gate coupled to the gate of the first p-channel transistor, and a drain; a first n-channel MOS transistor having a source coupled to ground, and a gate and a drain coupled to the drain of the second p-channel transistor; a zero-threshold n-channel MOS transistor having a drain coupled to a current-output node, a gate coupled to the gate of the first n-channel transistor, and a source; and a second n-channel MOS transistor having a source coupled to ground, and a gate coupled to the gate of the first n-channel transistor and a drain coupled to the source of the zero-threshold n-channel transistor.

摘要翻译： 一种电流镜，包括：电流源; 具有耦合到工作电位的源极的第一p沟道MOS晶体管和耦合到电流源的栅极和漏极; 具有耦合到所述工作电位的源极的第二p沟道MOS晶体管，耦合到所述第一p沟道晶体管的栅极的栅极和漏极; 第一n沟道MOS晶体管，其具有耦合到地的源极，以及耦合到第二p沟道晶体管的漏极的栅极和漏极; 具有耦合到电流 - 输出节点的漏极的零阈值n沟道MOS晶体管，耦合到第一n沟道晶体管的栅极的栅极和源极; 以及第二n沟道MOS晶体管，其具有耦合到地的源极，以及耦合到第一n沟道晶体管的栅极的栅极和耦合到零阈值n沟道晶体管的源极的漏极。

公开(公告)号：US20060170489A1

公开(公告)日：2006-08-03

申请号：US11393070

申请日：2006-03-29

申请人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

发明人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

IPC分类号： G05F1/10

CPC分类号： G05F3/262

摘要： A current mirror comprising: a current source; a first p-channel MOS transistor having a source coupled to an operating potential, and a gate and a drain coupled to the current source; a second p-channel MOS transistor having a source coupled to the operating potential, a gate coupled to the gate of the first p-channel transistor, and a drain; a first n-channel MOS transistor having a source coupled to ground, and a gate and a drain coupled to the drain of the second p-channel transistor; a zero-threshold n-channel MOS transistor having a drain coupled to a current-output node, a gate coupled to the gate of the first n-channel transistor, and a source; and a second n-channel MOS transistor having a source coupled to ground, and a gate coupled to the gate of the first n-channel transistor and a drain coupled to the source of the zero-threshold n-channel transistor.

摘要翻译： 一种电流镜，包括：电流源; 具有耦合到工作电位的源极的第一p沟道MOS晶体管和耦合到电流源的栅极和漏极; 具有耦合到所述工作电位的源极的第二p沟道MOS晶体管，耦合到所述第一p沟道晶体管的栅极的栅极和漏极; 第一n沟道MOS晶体管，其具有耦合到地的源极，以及耦合到第二p沟道晶体管的漏极的栅极和漏极; 具有耦合到电流 - 输出节点的漏极的零阈值n沟道MOS晶体管，耦合到第一n沟道晶体管的栅极的栅极和源极; 以及第二n沟道MOS晶体管，其具有耦合到地的源极，以及耦合到第一n沟道晶体管的栅极的栅极和耦合到零阈值n沟道晶体管的源极的漏极。

公开(公告)号：US07084699B2

公开(公告)日：2006-08-01

申请号：US11102031

申请日：2005-04-07

申请人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

发明人： Lorenzo Bedarida ,  Danut Manea ,  Mirella Marsella ,  Andrea Sacco

IPC分类号： G05F1/10

CPC分类号： G05F3/262

摘要： A current mirror comprising: a first current source; a first n-channel MOS transistor having a drain and a gate coupled to said current source and a source coupled to ground; a second n-channel MOS transistor having a drain, a gate coupled to said drain and said gate of said first n-channel MOS transistor, and a source coupled to ground; a third n-channel MOS transistor having a source coupled to said drain of said second n-channel MOS transistor, a gate, and a drain comprising an output-current node; a second current source; a p-channel MOS transistor having a drain coupled to ground, a source coupled to said second current source and said gate of said third n-channel MOS transistor, and a gate coupled to said drain and said gate of said first n-channel MOS transistor.

摘要翻译： 一种电流镜，包括：第一电流源; 第一n沟道MOS晶体管，其具有耦合到所述电流源的漏极和栅极以及耦合到地的源极; 具有漏极的第二n沟道MOS晶体管，耦合到所述漏极的栅极和所述第一n沟道MOS晶体管的所述栅极以及耦合到地的源极; 第三n沟道MOS晶体管，具有耦合到所述第二n沟道MOS晶体管的所述漏极的源极，栅极和包括输出电流节点的漏极; 第二个电流源; 具有耦合到地的漏极的p沟道MOS晶体管，耦合到所述第二电流源和所述第三n沟道MOS晶体管的所述栅极的源极，以及耦合到所述第一n沟道MOS晶体管的所述漏极和所述栅极的栅极 晶体管。