公开(公告)号：US4390888A

公开(公告)日：1983-06-28

申请号：US182472

申请日：1980-08-28

Applicant: Lothar Risch ,  Hermann Mader

Inventor： Lothar Risch ,  Hermann Mader

IPC: H04N5/33 ,  H01L27/146 ,  H01L27/148 ,  H01L27/14

CPC classification number: H01L27/14875 ,  H01L27/14649

Abstract: An x-y infrared CCD sensor employing the photoelectric effect as in a p-doped semiconductor substrate of silicon with an n.sup.+ pn diode as the infrared sensor element with a three layer structure in the vertical direction in the semiconductor substrate and a n-channel charge coupled device shift register. The device has a metal-oxide-semiconductor storage electrode directly adjacent to the n-region of the three layer structure. The device is manufactured by masked ion implantation with the doping density for the three layer sequence such that the doping density for the layer operating as the emitter is greater than the doping density for the layer operating as a base, which in turn is greater than the doping density for the layer operating as the collector.

Abstract translation: 使用光电效应的xy红外CCD传感器，其中n + pn二极管的p掺杂半导体衬底中的红外传感器元件在半导体衬底中具有垂直方向的三层结构，并且n沟道电荷耦合 器件移位寄存器。 该器件具有与三层结构的n区直接相邻的金属氧化物半导体存储电极。 该器件通过掩模离子注入制造，具有三层序列的掺杂密度，使得作为发射极工作的层的掺杂密度大于作为基极操作的层的掺杂密度，其又大于 作为收集器操作的层的掺杂密度。

公开(公告)号：US4278986A

公开(公告)日：1981-07-14

申请号：US103

申请日：1979-01-02

Applicant: Hermann Mader

Inventor： Hermann Mader

IPC: H01L31/10 ,  H01L29/861 ,  H01L29/864 ,  H01L31/101 ,  H01L31/107 ,  H01L29/00

CPC classification number: H01L29/8618 ,  H01L31/101

Abstract: A semiconductor diode comprises an NPN or a PNP-three-layer structure of alternate conductivity type formed of three bordering semiconductor layers and having ohmic contacts. The diode is characterized in that in order to reduce the energy barrier, the central layer in the three-layer structure is selected in its thickness to be so thin that already without external electrode voltage applied to the ohmic contacts, with a given doping of the central layer, the entire central layer is depleted of free charge carriers.

Abstract translation: 半导体二极管包括由三个边界半导体层形成且具有欧姆接触的NPN或PNP-三层结构的交替导电类型。 二极管的特征在于为了减少能量势垒，三层结构中的中心层的厚度被选择为如此薄，使得已经没有施加到欧姆接触的外部电极电压，给定的掺杂 中心层，整个中心层耗尽了自由电荷载体。