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    Non-volatile multi-stable memory device and methods of making and using the same
    1.
    发明申请
    Non-volatile multi-stable memory device and methods of making and using the same 有权
    非易失性多稳定存储器件及其制作和使用方法

    公开(公告)号：US20050040455A1

    公开(公告)日：2005-02-24

    申请号：US10645240

    申请日：2003-08-20

    申请人： Luisa Bozano ,  Kenneth Carter ,  John Scott

    发明人： Luisa Bozano ,  Kenneth Carter ,  John Scott

    IPC分类号： G11C7/00 ,  G11C13/00 ,  H01L27/10 ,  H01L27/24 ,  H01L29/76 ,  H01L45/00

    CPC分类号： G11C13/00 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

    摘要： A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity. The multi-stable element is stable, cyclable, and reproducible in both the “on” state and the “off” state. The storage medium has a relatively high resistance in both its on and off states. Consequently, a dense array can be fabricated without significant cross-talk between adjacent elements. No patterning of the layer of storage medium is required.

    摘要翻译： 在交叉点数据存储阵列中，作为交换机，存储设备或逻辑设备使用多稳定存储器或数据存储元件。 多稳定元件的一般结构包括分层的复合介质，其既输送并存储设置在两个电极之间的电荷。 分散在复合介质中的是分离和储存电荷的离散电荷存储颗粒。 多稳定元件实现了示例性的双稳态特征，提供了通过向器件施加电压可靠地产生两个或多个稳定状态的可切换装置。 用于实现“接通”状态，“断开”状态，任何中间状态以及读取多稳态元件的状态的电压都具有相同的极性。 多稳态元件在“开”状态和“关”状态都是稳定的，可循环的和可再现的。 存储介质在其打开和关闭状态下具有相对较高的电阻。 因此，可以在相邻元件之间没有明显的串扰的情况下制造密集阵列。 不需要存储介质层的图案化。

    Memory device and method of making the same
    2.
    发明申请
    Memory device and method of making the same 有权
    记忆体及其制作方法

    公开(公告)号：US20050237834A1

    公开(公告)日：2005-10-27

    申请号：US11151007

    申请日：2005-06-14

    申请人： Luisa Bozano ,  Kenneth Carter ,  John Scott

    发明人： Luisa Bozano ,  Kenneth Carter ,  John Scott

    IPC分类号： G11C7/00 ,  G11C13/00 ,  H01L27/10 ,  H01L27/24 ,  H01L29/76 ,  H01L45/00

    CPC分类号： G11C13/00 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

    摘要： A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity.

    摘要翻译： 在交叉点数据存储阵列中，作为交换机，存储设备或逻辑设备使用多稳定存储器或数据存储元件。 多稳定元件的一般结构包括分层的复合介质，其既输送并存储设置在两个电极之间的电荷。 分散在复合介质中的是分离和储存电荷的离散电荷存储颗粒。 多稳定元件实现了示例性的双稳态特征，提供了通过向器件施加电压可靠地产生两个或多个稳定状态的可切换装置。 用于实现“接通”状态，“断开”状态，任何中间状态以及读取多稳态元件的状态的电压都具有相同的极性。