利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.012 秒)

    SEMICONDUCTOR LASER
    1.
    发明申请
    SEMICONDUCTOR LASER 有权

    公开(公告)号：US20220360048A1

    公开(公告)日：2022-11-10

    申请号：US17449560

    申请日：2021-09-30

    申请人： Lumentum Japan, Inc.

    发明人： Shoko YOKOKAWA ,  Atsushi NAKAMURA

    IPC分类号： H01S5/22 ,  H01S5/227 ,  H01S5/12 ,  H01S5/10

    摘要： A semiconductor laser includes: a multi-quantum well layer in a mesa structure; a buried layer comprising a semi-insulating semiconductor, the buried layer being in contact with each of both sides of the mesa structure; a first cladding layer with a first conductivity type, the first cladding layer having a lower refractive index than the multi-quantum well layer; a high refractive index layer configured to not absorb light oscillating in the multi-quantum well layer, the high refractive index layer having a higher refractive index than the first cladding layer; a diffraction grating layer at least partially constituting a diffraction grating capable of diffracting the light oscillating in the multi-quantum well layer, the diffraction grating layer not contacting the high refractive index layer; a substrate with the first conductivity type; and a second cladding layer with a second conductivity type above the multi-quantum well layer.